High-performance cholesterol sensor based on the solution-gated field effect transistor fabricated with ZnO nanorodsAHMAD, Rafiq; TRIPATHY, Nirmalya; HAHN, Yoon-Bong et al.Biosensors & bioelectronics. 2013, Vol 45, pp 281-286, issn 0956-5663, 6 p.Article

A new interpretation of the channel charge control mechanism in GaAs MESFET'sSHENAI, K; DUTTON, R. W.IEEE electron device letters. 1985, Vol 6, Num 10, pp 528-530, issn 0741-3106Article

An empirical model for the threshold voltage of enhancement NMOSFET'sHONG-JUNE PARK; CHOONG-KI KIM.IEEE transactions on computer-aided design of integrated circuits and systems. 1985, Vol 4, Num 4, pp 629-635, issn 0278-0070Article

An optimized and reliable LDD structure for 1-μm NMOSFET based on substrate current analysisMATSUMOTO, Y; HIGUCHI, T; MIZUNO, T et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 2, pp 429-433, issn 0018-9383Article

Analytical model for predicting threshold voltage in submicrometer-channel MOSFET'sTING-WEI TANG; QIAN-LING ZHANG; NAVON, D. H et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 9, pp 1890-1893, issn 0018-9383Article

Backgating characteristics of MODFET structuresEZIS, A; LANGER, D. W.IEEE electron device letters. 1985, Vol 6, Num 10, pp 494-496, issn 0741-3106Article

Characterization of DX centers in molecular-beam-epitaxial grown Si-doped Al_xGa_1-xAs using Schottky barriers and modulation-doped field-effect transistorsSUBRAMANIAN, S; SCHULLER, U; ARTHUR, J. R et al.Journal of applied physics. 1985, Vol 58, Num 2, pp 845-851, issn 0021-8979Article

Comments on «small geometry MOS transistor capacitance measurement method using simple on-chip circuits»YAO, C. T; LIN, H. C; ORISIAN, J. E et al.IEEE electron device letters. 1985, Vol 6, Num 1, pp 63-67, issn 0741-3106Article

Design calculations for submicron gate-length AlGaAs/GaAs modulation-doped fet structures using carrier saturation velocity/charge-control modelDAS, M. B; ROSZAK, M. L.Solid-state electronics. 1985, Vol 28, Num 10, pp 997-1005, issn 0038-1101Article

Field effect in dc-sputtered a-Si:H in structure using SiN_x prepared in situSMID, V; DUNG, N. M; STOURAC, L et al.Journal of non-crystalline solids. 1985, Vol 70, Num 1, pp 1-8, issn 0022-3093Article

Hall-effect measurements on short-channel devices using the van der Pauw dual techniqueANDREOU, A. G; WESTGATE, C. R.Proceedings of the IEEE. 1985, Vol 73, Num 3, pp 489-490, issn 0018-9219Article

High-voltage bipolar mode JFET with normally off characteristicsBELLONE, S; CARUSO, A; SPIRITO, P et al.IEEE electron device letters. 1985, Vol 6, Num 10, pp 522-524, issn 0741-3106Article

Hot-electron substrate-current generation during switching transientsFU-CHIEH HSU; KUANG YI CHIU.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 2, pp 394-399, issn 0018-9383Article

Hot-electron-induced degradation in MOSFET's at 77KBRACCHITTA, J. A; HONAN, T. L; ANDERSON, R. L et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 9, pp 1850-1857, issn 0018-9383Article

Mobility degradation in very thin oxide p-channel MOSFET'sHAO-QUAN SU; CHE-CHIA WEI; TSO-PING MA et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 3, pp 559-561, issn 0018-9383Article

Model for the temperature dependence of the threshold voltage of modulation-doped field-effect transistorsSUBRAMANIAN, S.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 5, pp 865-870, issn 0018-9383Article

Optimum design of n⁺-n^- double-diffused drain MOSFET to reduce hot-carrier emissionKOYANAGI, M; KANEKO, H; SHIMIZU, S et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 3, pp 562-570, issn 0018-9383Article

Threshold voltage in short-channel MOS devicesVISWANATHAN, C. R; BURKEY, B. C; LUBBERTS, G et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 5, pp 932-940, issn 0018-9383Article

Two-dimensional electron gas in an n⁺ GaAs/undoped AlGaAs/undoped GaAs SIS structureWADA, T; MATSUMOTO, K; OGURA, M et al.Japanese journal of applied physics. 1985, Vol 24, Num 3, pp 213-216, issn 0021-4922Article

Two-dimensional simulation of MODFET and GaAs gate heterojunction FET'sTANG, J. Y.-F.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 9, pp 1817-1823, issn 0018-9383Article

Visible light emission from silicon mosfetsDAS, N. C; KHOKLE, W. S; MOHANTY, S. D et al.Solid-state electronics. 1985, Vol 28, Num 10, pp 967-977, issn 0038-1101Article

Transistor à effet de champ avec un canal transversalement hétérogènePOPOV, V. V.Žurnal tehničeskoj fiziki. 1985, Vol 55, Num 11, pp 2228-2230, issn 0044-4642Article

Low-frequency noise characteristics of gallium arsenide MESFETsRUCKER, L. M; HELLUMS, J. R.Solid-state electronics. 1984, Vol 27, Num 11, pp 947-948, issn 0038-1101Article

Low-frequency noise in gallium arsenide MESFETsDUH, K. H; ZHU, X. C; VAN DER ZIEL, A et al.Solid-state electronics. 1984, Vol 27, Num 11, pp 1003-1013, issn 0038-1101Article

Low-frequency noise in gallium arsenide structuresHELLUMS, J. R; RUCKER, L. M.Solid-state electronics. 1984, Vol 27, Num 11, pp 949-952, issn 0038-1101Article