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Origin of flat band voltage shift in HfO₂ gate dielectric with La₂O₃ insertionKAKUSHIMA, K; OKAMOTO, K; ADACHI, M et al.Solid-state electronics. 2008, Vol 52, Num 9, pp 1280-1284, issn 0038-1101, 5 p.Conference Paper

A new method for the extraction of flat-band voltage and doping concentration in Tri-gate Junctionless TransistorsJEON, D.-Y; PARK, S. J; MOUIS, M et al.Solid-state electronics. 2013, Vol 81, pp 113-118, issn 0038-1101, 6 p.Article

Ethanol sensitivity of palladium-gate metal-oxide-semiconductor structuresACKELID, U; ARMGARTH, M; SPETZ, A et al.IEEE electron device letters. 1986, Vol 7, Num 6, pp 353-355, issn 0741-3106Article

Shifts in the flatband voltage of metal-oxide-silicon structure due to iodine in SiO₂KRUSIN-ELBAUM, L; SAI-HALASZ, G. A.Applied physics letters. 1986, Vol 48, Num 2, pp 177-179, issn 0003-6951Article

Capacité d'interface et potentiel de bandes plates de CdIn₂Se₄ et CdCr₂Se₄ = Interface capacity and flat-band potential of CdIn₂Se₄ and CdCr₂Se₄SAVADOGO, O; YAZBECK, J; DESCHANVRES, A et al.Annales de chimie (Paris. 1914). 1984, Vol 9, Num 2, pp 145-152, issn 0151-9107Article

Study of electrical characteristics on thermally nitrided SiO₂ (nitroxide) filmsCHEN, C.-T; TSENG, F.-C; CHANG, C.-Y et al.Journal of the Electrochemical Society. 1984, Vol 131, Num 4, pp 875-877, issn 0013-4651Article

Conduction properties of silicon dioxide in oxide-nitride-oxide structuresMANZINI, S; QUEIROLO, G.Solid-state electronics. 1987, Vol 30, Num 6, pp 587-591, issn 0038-1101Article

Electrolyte-semiconductor junctions in the case of p-type II-VI alloys with common telluride anionLEMASSON, P.Solid state communications. 1983, Vol 48, Num 5, pp 411-415, issn 0038-1098Article

Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistorsJEON, Dae-Young; SO JEONG PARK; MOUIS, Mireille et al.Solid-state electronics. 2013, Vol 81, pp 101-104, issn 0038-1101, 4 p.Article

Sensing behavior and mechanism of titanium dioxide-based MOS hydrogen sensorYADAV, Lallan; NAVEEN CHANDRA GUPTA; DWIVEDI, R et al.Microelectronics journal. 2007, Vol 38, Num 12, pp 1226-1232, issn 0959-8324, 7 p.Article

Low-temperature electrical characterization of junctionless transistorsJEON, Dae-Young; SO JEONG PARK; MOUIS, Mireille et al.Solid-state electronics. 2013, Vol 80, pp 135-141, issn 0038-1101, 7 p.Article

EFFECT OF IONISING RADIATION ON MOBILE-ION DENSITY IN M.O.S. OXIDESBHAR TN; DAT R; KOYAMA RU et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 1; PP. 16-17; BIBL. 8 REF.Article

RAPID DETERMINATION OF SEMICONDUCTOR DOPING AND FLATBAND VOLTAGE IN LARGE MOSFET'S.LUBBERTS G.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 12; PP. 5355-5356; BIBL. 6 REF.Article

Photoelectrochemical processes in bismuth germanium oxide, Bi₁₂GeO₂₀ single crystalsKOCHEV, K; TZVETKOVA, K; GOSPODINOV, M et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 2, pp 330-332, issn 0013-4651Article

Dependence of the flatband voltage of Si-MOS on distribution of cesium in SiO₂: comparison of two implantation methodsKRUSIN-ELBAUM, L.Journal of the Electrochemical Society. 1986, Vol 133, Num 8, pp 1712-1715, issn 0013-4651Article

Characteristics of WN/GaAs Schottky contacts formed by reactive RF sputteringYAMAGISHI, H.Japanese journal of applied physics. 1984, Vol 23, Num 12, pp 895-898, issn 0021-4922Article

Mise au point. Principes de base de l'électrochimie des semiconducteurs = Basic principles of semiconductor electrochemistry (Review)GUYOMARD, D.Journal de chimie physique. 1986, Vol 83, Num 6, pp 355-391, issn 0021-7689Article

Determination of the Si-conducting polymer interfacial properties using A-C impedance techniquesNAGASUBRAMANIAN, G; DI STEFANO, S; MOACANIN, J et al.Journal of electronic materials. 1986, Vol 15, Num 1, pp 21-25, issn 0361-5235Article

Electrical properties of amorphous tantalum pentoxide thin films on siliconOEHRLEIN, G. S; REISMAN, A.Journal of applied physics. 1983, Vol 54, Num 11, pp 6502-6508, issn 0021-8979Article

A method of making oxynitrides by interface nitridation through siliconSUIZU, Yasumasa; FUKUMOTO, Masato; OZAWA, Yoshio et al.Journal of the Electrochemical Society. 2001, Vol 148, Num 4, pp F51-F55, issn 0013-4651Article

Charge trapping and interface state generation in metal-oxide-semiconductor capacitors due to fowler-nordheim tunneling injection at low temperaturesSAKASHITA, M; ZAIMA, S; YASUDA, Y et al.Journal of applied physics. 1990, Vol 67, Num 11, pp 6903-6907, issn 0021-8979Article

Measurement of properties of the n-layer in hydrogenated amorphous silicon solar cellsSANCHEZ-SINENCIO, F; WILLIAMS, R.Journal of applied physics. 1986, Vol 60, Num 2, pp 820-822, issn 0021-8979Article

New method of determination of the flat-band voltage in SOI MOS structuresINIEWSKI, K; JAKUBOWSKI, A.Solid-state electronics. 1986, Vol 29, Num 9, pp 947-950, issn 0038-1101Article

Détermination de la tension des bandes plates d'un semiconducteur d'après les graphiques de Mott-Schottky en présence d'états de surfaceKOVACH, S. K; VAS'KO, A. T.Èlektrohimiâ. 1985, Vol 21, Num 3, pp 357-358, issn 0424-8570Article