Gen 1,26 and 2,7 in Judaism, Samaritanism, and GnosticismFOSSUM, J.Journal for the Study of Judaism in the Persian, Hellenistic and Roman Period Leiden. 1985, Vol 16, Num 2, pp 202-239Article

The myth of the eternal rebirth : Critical notes on G.W. Bowersock, Hellenism in late antiquityFOSSUM, J.Vigiliae christianae. 1999, Vol 53, Num 3, pp 305-315, issn 0042-6032Article

Colossians 1. 15-18a in the Light of Jewish Mysticism and GnosticismFOSSUM, J.New Testament studies. 1989, Vol 35, Num 2, pp 183-201, issn 0028-6885Article

The Simonian Sophia MythFOSSUM, J.Studi e materiali di storia delle religioni (1983). 1987, Vol 53, Num 2, pp 185-197, issn 0393-8417Article

The Origin of the Gnostic Concept of the DemiurgeFOSSUM, J.Ephemerides Theologicae Lovanienses Gembloux. 1985, Vol 61, Num 1, pp 142-152Article

A phenomenological analysis of ultrasound near phase transitionsFOSSUM, J. O.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 29, pp 5531-5548, issn 0022-3719Article

The effect of body resistance on the breakdown characteristics of SOI MOSFET'sDONGWOOK SUH; FOSSUM, J. G.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 6, pp 1063-1066, issn 0018-9383Article

Seth in the magical textsFOSSUM, J; GLAZER, B.Zeitschrift für Papyrologie und Epigraphik. 1994, Vol 100, pp 86-92, issn 0084-5388Article

Analytic accounting for carrier velocity overshoot in advanced BJT's for circuit simulationJOOHYUN JIN; FOSSUM, J. G.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 4, pp 789-795, issn 0018-9383Article

A charge-based large-signal bipolar transistor model for device and circuit simulationHANGGEUN JEONG; FOSSUM, J. G.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 1, pp 124-131, issn 0018-9383, 1Article

Current-drive enhancement limited by carrier velocity saturation in deep-submicrometer fully depleted SOI MOSFET'sFOSSUM, J. G; KRISHNAN, S.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 2, pp 457-459, issn 0018-9383Article

A physical charge-based model for non-fully depleted SOI MOSFET's and its use in assessing floating-body effects in SOI CMOS circuitsDONGWOOK SUH; FOSSUM, J. G.I.E.E.E. transactions on electron devices. 1995, Vol 42, Num 4, pp 728-737, issn 0018-9383Article

Silicon-on-insulator technology and devices XI (Paris, 28 April - 2 May 2003)Celler, G; Fossum, J; Gamiz, F et al.Proceedings - Electrochemical Society. 2003, issn 0161-6374, isbn 1-56677-375-X, XI, 522 p, isbn 1-56677-375-XConference Proceedings

Defects and electrical consequences in SOI buried oxidesHOVEL, H. J; ALMONTE, M; LEE, J. D et al.Proceedings - Electrochemical Society. 2003, pp 105-110, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Investigation of charge control related performances in double-gate SOI MOSFETsKILCHYTSKA, V; CHUNG, T. M; VAN MEER, H et al.Proceedings - Electrochemical Society. 2003, pp 225-230, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Comparative study of the dynamic performance of bulk and FDSOI mosfet by means of a Monte Carlo simulationRENGEL, R; PARDO, D; MARTIN, M. J et al.Proceedings - Electrochemical Society. 2003, pp 283-288, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Extraction of high frequency noise parameters of 0.25μm partially depleted silicon-on-insulator MOSFET: Impact of the high resistivity substrateDAVIOT, R; ROZEAU, O; CHOUTEAU, S et al.Proceedings - Electrochemical Society. 2003, pp 473-478, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Evidence for a linear kink effect in ultra-thin gate oxide SOI MOSFETsMERCHA, A; RAFI, J. M; SIMOEN, E et al.Proceedings - Electrochemical Society. 2003, pp 319-324, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

An accurate model for threshold voltage and S-factor of partially-depleted surrounding gate transistor (PD-SGT)YAMAMOTO, Yasue; HIOKI, Masakazu; NISHI, Ryohsuke et al.Proceedings - Electrochemical Society. 2003, pp 325-330, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Nature of high-temperature charge instability in fully depleted SOI MOSFETsNAZAROV, A. N; LYSENKO, V. S; COLINGE, J.-P et al.Proceedings - Electrochemical Society. 2003, pp 455-460, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Saturation current model for the N-channel G⁴-FETDUFRENE, B; BLALOCK, B; CRISTOIOVEANU, S et al.Proceedings - Electrochemical Society. 2003, pp 367-372, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Status and future development of PDSOI MOSFETsKRISHNAN, Srinath.Proceedings - Electrochemical Society. 2003, pp 215-224, issn 0161-6374, isbn 1-56677-375-X, 10 p.Conference Paper

Emerging silicon-on-nothing (SON) devices technologySKOTNICKI, T; MONFRAY, S; FENOUILLET-BERANGER, C et al.Proceedings - Electrochemical Society. 2003, pp 133-148, issn 0161-6374, isbn 1-56677-375-X, 16 p.Conference Paper

Multi-fin double-gate mosfet fbricated by using (110)-oriented SOI wafers and orientation-dependent etchingLIU, Y. X; ISHII, K; TSUTSUMI, T et al.Proceedings - Electrochemical Society. 2003, pp 255-260, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Partially depleted SOI dynamic threshold MOSFET for low-voltage and microwave applicationsDEBAN, M; VANHOENACKER-JANVIER, D; RASKIN, J.-P et al.Proceedings - Electrochemical Society. 2003, pp 289-294, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper