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Photoconductivité de longue durée dans les structures n-AlxGa1―x/GaAs dopées sélectivement dans les conditions de compression hydrostatiqueVORONOVSKIJ, A. N; ITSKEVICH, I. E; KASHIRSKAYA, L. M et al.Pis′ma v žurnal èksperimental′noj i teoretičeskoj fiziki. 1985, Vol 42, Num 10, pp 405-408, issn 0370-274XArticle

Photoconductivity of poly(arylenevinylene)s and poly(hetarylenevinylene)sLANG, M; KRETZSCHMANN, H; MEIER, H et al.Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals. 1994, Vol 252-53, pp 303-309, issn 1058-725XConference Paper

Transient picosecond photoconductivity in polyacetyleneREICHENBACH, J; KAISER, M; ROTH, S et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 19, pp 14104-14112, issn 0163-1829Article

Anomalous photocurrent transient in polyethyleneTAHIRA, K; KAO, K. C.Journal of physics. D, Applied physics (Print). 1985, Vol 18, Num 11, pp 2247-2259, issn 0022-3727Article

Photoconductivité différentielle négative. Effet de l'extinction IR de la photoconductivitéLUK'YANCHENKO, A. I.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 5, pp 882-885, issn 0015-3222Article

Negative hopping photoconductivity in lattice modelsNOVIKOV, V. N; STURMAN, B. I.Journal of physics. C. Solid state physics. 1987, Vol 20, Num 29, pp 4845-4854, issn 0022-3719Article

Transient photoconductive response of InP:FeIVERSON, A. E; SMITH, D. L; PAULTER, N. G et al.Journal of applied physics. 1987, Vol 61, Num 1, pp 234-239, issn 0021-8979Article

Effets de la recombinaison de surface et des conditions d'excitation sur les réponses de photoconductivité transitoire = Effects of surface recombination and excitation conditions on the transient photoconductivity responsesREBIAI, S; BIELLE-DASPET, D.Revue de physique appliquée. 1986, Vol 21, Num 9, pp 545-556, issn 0035-1687Article

Transient photoconductivity of silver bromide emulsion grains doped with iridium ionsVEKEMAN, G; PENG, Y. B; MAENHOUT-VAN DER VORST, W et al.Journal of imaging science. 1988, Vol 32, Num 4, pp 187-193, issn 8750-9237Article

Electric-induced negative photoconductivity in GaAsWIEDER, H. H; HANSON, C. M; ZULEEG, R et al.Journal of applied physics. 1986, Vol 59, Num 11, pp 3911-3913, issn 0021-8979Article

Les photoélectrons dans les semiconducteurs en champs parallèles, électrique et magnétique quantifiantGURVICH, YU. A; GUSINSKIJ, EH. N.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 9, pp 1667-1672, issn 0015-3222Article

Mécanismes de la photoconductivité négative absolueMALINOVSKIJ, V. K; NIVIKOV, V. N; STURMAN, B. I et al.ZETF. Pis′ma v redakciû. 1986, Vol 91, Num 2, pp 594-606, issn 0044-4510Article

Atmosphere sensitive photoconductivity of C60 thin prepared in high vacuumMINAMI, N; SATO, M.Synthetic metals. 1993, Vol 56, Num 2-3, pp 3092-3097, issn 0379-6779Conference Paper

On the relationship between photoconductivity and light intensity in solidsSCHELLENBERG, J. J; KAO, K. C.Journal of physics. D, Applied physics (Print). 1988, Vol 21, Num 12, pp 1764-1768, issn 0022-3727Article

Influence des résonances magnétiques d'impuretés sur la photoconductivité de Ge-pSHOVKUN, D. V.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 9, pp 1569-1573, issn 0015-3222Article

Photoconductivité des cristaux lamellaires de InSeBRANDT, N. B; KOVALYUK, Z. D; KUL'BACHINSKIJ, V. A et al.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 9, pp 1657-1660, issn 0015-3222Article

Photoelectric properties of isotype heterojunctions n-InSe<REE>/n-CuInSe2 in visible and near IR-regionABDINOV, A. Sh; BABAYEVA, R. F; ISMAYILOV, R. M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 260-263, issn 0277-786X, isbn 0-8194-5828-7, 1Vol, 4 p.Conference Paper

Novel photo-memory effect in photoconductivity of conducting polymer containing photochromic dyeKAWAI, T; KOSHIDO, T; NAKAZONO, M et al.Chemistry Letters. 1993, Num 4, pp 697-700, issn 0366-7022Article

Influence of temperature on the photoconductivity due to the D^- centersGINZBURG, L. P.Soviet physics. Semiconductors. 1991, Vol 25, Num 2, pp 188-190, issn 0038-5700Article

Effet photogalvanique balistique de transitions interbandes dans l'arséniure de galliumAL'PEROVICH, V. L; BELINICHER, V. I; MINAEV, A. O et al.Fizika tverdogo tela. 1988, Vol 30, Num 10, pp 3111-3117, issn 0367-3294Article

Response of systems with Gaussian or exponential energy distributionsROSS MACDONALD, J.Journal of the Electrochemical Society. 1988, Vol 135, Num 12, pp 3067-3068, issn 0013-4651Article

Contactless scanner for photoactive materials using laser-induced microwave absorptionBECK, G; KUNST, M.Review of scientific instruments. 1986, Vol 57, Num 2, pp 197-201, issn 0034-6748Article

The thermal quenching and supralinearity of photoconductivity in hydrogenated amorphous siliconBENYUAN GU; DAXING HAN; CHENXI LI et al.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1986, Vol 53, Num 4, pp 321-337, issn 0141-8637Article

Long-wavelength intrinsic photoconductivity in PbSnTe:InHERRMANN, K. H; MÖLLMANN, K.-P.Physica status solidi. A. Applied research. 1985, Vol 91, Num 2, pp K147-K150, issn 0031-8965Article