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Results 1 to 25 of 3515

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Transients in p+π+ photodiodesGRUMMT, G; TOUSEK, J; TRYZNA, B et al.Physica status solidi. A. Applied research. 1988, Vol 110, Num 2, pp 687-695, issn 0031-8965Article

Narrow gap semiconductor photodiodesROGALSKI, A; RAZEGHI, M.SPIE proceedings series. 1998, pp 2-13, isbn 0-8194-2726-8Conference Paper

Screening and qualification of discrete silicon photo-devicesSESHAMANI, R; ISLAM, R; SAHA, I et al.SPIE proceedings series. 1998, pp 676-681, isbn 0-8194-2756-X, 2VolConference Paper

Automatic compensation for the temperature coefficient of a photodiode in short-circuit mode = Emploi d'une photodiode comme capteur de températureNIHTIANOV, S. N; ALIPIEV, D. P.Sensors and actuators. A, Physical. 1991, Vol 29, Num 2, pp 117-120, issn 0924-4247Article

Tunable single frequency operation of a diode laser pumped Nd:YAG microchip at 1.3 μmZHOU, F; FERGUSON, A. I.Electronics Letters. 1990, Vol 26, Num 7, pp 490-491, issn 0013-5194Article

Theory of the GaAs-doped p-i-n quantum well APDBRENNAN, K. F; VETTERLING, W. T.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 9, pp 1597-1601, issn 0018-9383, 5 p., 1Article

Light-activated silicon diode switchesGIORGI, D; YU, P. K. L; LONG, J. R et al.Journal of applied physics. 1988, Vol 63, Num 3, pp 930-933, issn 0021-8979Article

The theory, fabrication and assessment of ultra high spedd photodiodesPARKER, D. G.GEC journal of research. 1988, Vol 6, Num 2, pp 106-117, issn 0264-9187Article

Two-color amorphous silicon photodiode for multi-color detection of labeled DNACAPUTO, D; DE CESARE, G; NASCETTI, A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 65920C.1-65920C.7, issn 0277-786X, isbn 978-0-8194-6720-1, 1VolConference Paper

Fonction de transfert optique de photodiodes en IR avec une structure de bandes de KaneTURINOV, V. I.Optika i spektroskopiâ. 1989, Vol 66, Num 4, pp 868-873, issn 0030-4034Article

Analysis of anomalous I-V characteristics of silicon p+-n-n+ photodiodes fabricated by boron implant through SiO2 layersSILARD, A. P.International journal of electronics. 1989, Vol 66, Num 2, pp 247-261, issn 0020-7217, 15 p.Article

Time-resolved non-contact fluorescence diffuse optical tomography measurements with ultra-fast time-correlated single photon counting avalanche photodiodesBERUBE-LALLZIERE, Yves; ROBICHAUD, Vincent; LAPOINTE, Eric et al.Progress in biomedical optics and imaging. 2007, Vol 6629, pp 66290W.1-66290W.12, issn 1605-7422, isbn 978-0-8194-6773-7, 1VolConference Paper

Self-calibrated radiometric IR photodiode based on the defect semiconductor Hg3In2Te6 for the spectral range 0.85-1.5 μmMALIK, A. I; GRUSHKA, G. G.Soviet physics. Technical physics. 1990, Vol 35, Num 10, pp 1227-1228, issn 0038-5662Article

Very short electrical pulse generation by a composite planar GaAs photodetectorKAMIYAMA, H; KOBAYASHI, Y; NAGATSUMA, T et al.Japanese journal of applied physics. 1990, Vol 29, Num 9, pp 1717-1723, issn 0021-4922, 1Article

CMOS image sensor using a floating diffusion driving buried photodiodeMABUCHI, Keiji; NAKAMURA, Nobuo; FUNATSU, Eiichi et al.IEEE International Solid-State Circuits Conference. 2004, pp 112-113, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

Rapid-thermal-oxidised porous Si photodetectorsTSAI, C; LI, K.-H; CAMPBELL, J. C et al.Electronics Letters. 1993, Vol 29, Num 1, pp 134-136, issn 0013-5194Article

Photodetector hybrids : what are they and who needs them ?MICHAEL MADDEN, R; WILLIAMSON, P. C.Laser focus world. 1992, Vol 28, Num 7, pp 107-114, issn 1043-8092, 6 p.Article

Internal quantum efficiency of Ge photodiodesSTOCK, K. D.Applied optics. 1988, Vol 27, Num 1, pp 12-14, issn 0003-6935Article

The properties of the miniature silicon photodiodes in a 14.7 MeV neutron fieldMATUSU, J; BURIAN, A; SOPKO, B et al.Journal of radioanalytical and nuclear chemistry. 1988, Vol 126, Num 2, pp 115-120, issn 0236-5731Article

A sensor element for direct radiation measurementBAJONS, P; WERNHART, U; ZEILER, H et al.Solar energy. 1998, Vol 63, Num 2, pp 125-134, issn 0038-092XArticle

Dystem to phase lock a self-scanning photodiode array to an external signalHARVEY, K. C; LEA, P.W; MORRIS, J. E et al.Review of scientific instruments. 1992, Vol 63, Num 3, pp 1991-1998, issn 0034-6748Article

Frequency response of InP/InGaAsP/InGaAs avalanche photodiodesCAMPBELL, J. C; JOHNSON, B. C; QUA, G. J et al.Journal of lightwave technology. 1989, Vol 7, Num 5, pp 778-784, issn 0733-8724, 7 p.Article

Temperature dependence of high accuracy photometer headsANDOR, G.Applied optics. 1989, Vol 28, Num 22, pp 4733-4734, issn 0003-6935Article

Coplanar vacuum photodiode for measurement of short-wavelength picosecond pulsesBOKOR, J; JOHNSON, A. M; SIMPSON, W. M et al.Applied physics letters. 1988, Vol 53, Num 26, pp 2599-2601, issn 0003-6951Article

Internal photoemission and energy-band offsets in GaAs-GalnP p-I-N heterojuction photodiodesHAASE, M. A; HAFICH, M. J; ROBINSON, G. Y et al.Applied physics letters. 1991, Vol 58, Num 6, pp 616-618, issn 0003-6951Article

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