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Transients in p+π+ photodiodesGRUMMT, G; TOUSEK, J; TRYZNA, B et al.Physica status solidi. A. Applied research. 1988, Vol 110, Num 2, pp 687-695, issn 0031-8965Article

Narrow gap semiconductor photodiodesROGALSKI, A; RAZEGHI, M.SPIE proceedings series. 1998, pp 2-13, isbn 0-8194-2726-8Conference Paper

Screening and qualification of discrete silicon photo-devicesSESHAMANI, R; ISLAM, R; SAHA, I et al.SPIE proceedings series. 1998, pp 676-681, isbn 0-8194-2756-X, 2VolConference Paper

Automatic compensation for the temperature coefficient of a photodiode in short-circuit mode = Emploi d'une photodiode comme capteur de températureNIHTIANOV, S. N; ALIPIEV, D. P.Sensors and actuators. A, Physical. 1991, Vol 29, Num 2, pp 117-120, issn 0924-4247Article

The theory, fabrication and assessment of ultra high spedd photodiodesPARKER, D. G.GEC journal of research. 1988, Vol 6, Num 2, pp 106-117, issn 0264-9187Article

Time-resolved non-contact fluorescence diffuse optical tomography measurements with ultra-fast time-correlated single photon counting avalanche photodiodesBERUBE-LALLZIERE, Yves; ROBICHAUD, Vincent; LAPOINTE, Eric et al.Progress in biomedical optics and imaging. 2007, Vol 6629, pp 66290W.1-66290W.12, issn 1605-7422, isbn 978-0-8194-6773-7, 1VolConference Paper

Self-calibrated radiometric IR photodiode based on the defect semiconductor Hg3In2Te6 for the spectral range 0.85-1.5 μmMALIK, A. I; GRUSHKA, G. G.Soviet physics. Technical physics. 1990, Vol 35, Num 10, pp 1227-1228, issn 0038-5662Article

Very short electrical pulse generation by a composite planar GaAs photodetectorKAMIYAMA, H; KOBAYASHI, Y; NAGATSUMA, T et al.Japanese journal of applied physics. 1990, Vol 29, Num 9, pp 1717-1723, issn 0021-4922, 1Article

CMOS image sensor using a floating diffusion driving buried photodiodeMABUCHI, Keiji; NAKAMURA, Nobuo; FUNATSU, Eiichi et al.IEEE International Solid-State Circuits Conference. 2004, pp 112-113, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

Rapid-thermal-oxidised porous Si photodetectorsTSAI, C; LI, K.-H; CAMPBELL, J. C et al.Electronics Letters. 1993, Vol 29, Num 1, pp 134-136, issn 0013-5194Article

Photodetector hybrids : what are they and who needs them ?MICHAEL MADDEN, R; WILLIAMSON, P. C.Laser focus world. 1992, Vol 28, Num 7, pp 107-114, issn 1043-8092, 6 p.Article

Internal quantum efficiency of Ge photodiodesSTOCK, K. D.Applied optics. 1988, Vol 27, Num 1, pp 12-14, issn 0003-6935Article

The properties of the miniature silicon photodiodes in a 14.7 MeV neutron fieldMATUSU, J; BURIAN, A; SOPKO, B et al.Journal of radioanalytical and nuclear chemistry. 1988, Vol 126, Num 2, pp 115-120, issn 0236-5731Article

Internal photoemission and energy-band offsets in GaAs-GalnP p-I-N heterojuction photodiodesHAASE, M. A; HAFICH, M. J; ROBINSON, G. Y et al.Applied physics letters. 1991, Vol 58, Num 6, pp 616-618, issn 0003-6951Article

An amplifier for use with large-area photodiodesDYER, G. R; UCKAN, T.Review of scientific instruments. 1990, Vol 61, Num 12, pp 3909-3910, issn 0034-6748Article

Impact ionization rates in an In Ga As/In Al As superlatticeKAGAWA, T; KAWAMURA, Y; ASAI, H et al.Applied physics letters. 1989, Vol 55, Num 10, pp 993-995, issn 0003-6951, 3 p.Article

Microcharacterization and novel device applications of semiconductor-metal eutectic compositesDITCHEK, B. M; YACOBI, B. G.Japanese journal of applied physics. 1988, Vol 27, Num 11, pp L2155-L2157, issn 0021-4922, part 2Article

Photoelectric performance degradation of several laser-irradiated Si detectorsMOEGLIN, J.-P; GAUTIER, B; JOECKLE, R et al.SPIE proceedings series. 1998, pp 60-66, isbn 0-8194-2726-8Conference Paper

Optical nonlinear responses of a quantum well photodiode with a non-ohmic contactABE, Y; TOKUDA, Y; KANAMOTO, K et al.Applied physics letters. 1992, Vol 60, Num 14, pp 1664-1666, issn 0003-6951Article

Reflectometer for absolute silicon radiometryGARDNER, J. L.Applied optics. 1991, Vol 30, Num 16, pp 2067-2068, issn 0003-6935, 2 p.Article

Comparison of two cryogenic radiometers by determining the absolute spectral responsivity of silicon photodiodes with an uncertainty of 0.02%FOX, N. P; MARTIN, J. E.Applied optics. 1990, Vol 29, Num 31, pp 4686-4693, issn 0003-6935Article

Performance degradation of ADP-optical receivers due to dark current generated within the multiplication regionFYATH, R. S; O'REILLY, J. J.Journal of lightwave technology. 1989, Vol 7, Num 1, pp 62-67, issn 0733-8724, 6 p.Article

A study of surface passivation on GaAs and In0.53Ga0.47 Schottky-barrier photodiodes using SiO2, Si3N4 and polyimideLEE, D. H; LI, S. S; LEE, S et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 10, pp 1695-1696, issn 0018-9383Article

Demonstration of overlay UMTS signal transmission on a gigabit passive optical network (PON)LE BRAS, Hugues; MOIGNARD, Maryse.Proceedings of SPIE, the International SOciety for Optical Engineering. 2006, pp 619402.1-619402.8, issn 0277-786X, isbn 0-8194-6250-0, 1VolConference Paper

Color-sensitive Si-photodiode using porous silicon interference filtersKRÜGER, M; BERGER, M. G; HILBRICH, S et al.Japanese journal of applied physics. 1997, Vol 36, Num 1AB, pp L24-L26, issn 0021-4922, 2Article

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