kw.\*:("Génération porteur charge")
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A reciprocity theorem for charge collectionDONOLATO, C.Applied physics letters. 1985, Vol 46, Num 3, pp 270-272, issn 0003-6951Article
Photogenerated carrier collection in semiconductors with low mobility-lifetime productsGALLUZZI, F.Journal of physics. D, Applied physics (Print). 1985, Vol 18, Num 4, pp 685-690, issn 0022-3727Article
Charge carrier generation and exciton quenching at M3EH-PPV/small-molecule and M3EH-PPV/oxide interfacesBROWN, K. E; BREEZE, A. J; RUMBLES, G et al.sans titre. 2002, pp 1186-1189, isbn 0-7803-7471-1, 4 p.Conference Paper
Hole trapping, substrate currents, and breakdown in thin silicon dioxide filmsDIMARIA, D. J.IEEE electron device letters. 1995, Vol 16, Num 5, pp 184-186, issn 0741-3106Article
Photoinduced free carrier yields in high fields : Field dependent distribution functionsSMIRNOV, S. N; BRAUN, C. L.The Journal of imaging science and technology. 1999, Vol 43, Num 5, pp 425-429, issn 1062-3701Article
Internal charge generation in polyvinylidene fluoride films during polingEISENMENGER, W; SCHMIDT, H.International symposium on electrets. 1999, pp 635-638, isbn 0-7803-5025-1Conference Paper
Electron-beam-induced currents collected by a p-n junction of finite junction depthSOUKUP, R. J; EKSTRAND, P.Journal of applied physics. 1985, Vol 57, Num 12, pp 5386-5395, issn 0021-8979Article
Determination of generation time and surface generation velocity from voltage step responses of current and capacitance on MOS capacitorSHIBATA, A; KITA, K.Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E. 1984, Vol 67, Num 1, pp 1-4, issn 0387-236XArticle
Minimum probability of electron-hole pair generation by blackbody radiationCHENG-HSIAO WU.Journal of applied physics. 1985, Vol 58, Num 1, pp 575-578, issn 0021-8979Article
Collection length of photogenerated minority carriersGALLUZZI, F.Journal of physics. D, Applied physics (Print). 1983, Vol 16, Num 12, pp L261-L262, issn 0022-3727Article
Analysis of the rate of change of inversion charge in thin insulator p-type metal-oxide-semiconductor structuresMINGZHEN XU; CHANGHUA TAN; YANDONG HE et al.Solid-state electronics. 1995, Vol 38, Num 5, pp 1045-1049, issn 0038-1101Article
Slope to intercept ratio of low-field photodegeneration efficiency in β-metal-free phthalocyaninePOPOVIC, Z. D; MESBAH, S.Chemical physics letters. 1993, Vol 215, Num 6, pp 636-640, issn 0009-2614Article
Quantitative analysis of on bevel electrical junction shifts due to carrier spilling effectsCLARYSSE, T; VANDERVORST, W; CASEL, A et al.Applied physics letters. 1990, Vol 57, Num 26, pp 2856-2858, issn 0003-6951Article
Hot-carrier generation in submicrometer VLSI environmentSAKURAI, T; NOGAMI, K; KAKUMU, M et al.IEEE journal of solid-state circuits. 1986, Vol 21, Num 1, pp 187-192, issn 0018-9200Article
Analytical model and qualitative analysis of the interface-trap charge pumping characteristics of MOS structureHABAS, P.International conference on microelectronic. 1997, pp 605-610, isbn 0-7803-3664-X, 2VolConference Paper
Charge carrier generation in phenothiazine crystalKURABAYASHI, A; KOTANI, M.Molecular crystals and liquid crystals (1969). 1990, Vol 183, pp 193-196, issn 0026-8941Conference Paper
Characterization of dark current non-uniformities in charge-coupled devicesVAN DER SPIEGEL, J; DECLERCK, G. J.Solid-state electronics. 1984, Vol 27, Num 2, pp 147-154, issn 0038-1101Article
Génération de porteurs de charge hors d'équilibre dépendant du spinBORISOV, F. I; STRIKHA, V. I; TRETYAK, O. V et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 9, pp 1552-1555, issn 0015-3222Article
Transition rate for impact ionization in the approximation of a parabolic band structureGEIST, J; GLADDEN, W. K.Physical review. B, Condensed matter. 1983, Vol 27, Num 8, pp 4833-4840, issn 0163-1829Article
CARRIER GENERATION AT THE SI-SIO2 INTERFACE UNDER PULSED CONDITIONS.ARNOLD E; POLESHUK M.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 7; PP. 3016-3018; BIBL. 14 REF.Article
SEPARATION OF SURFACE AND BULK COMPONENTS IN MOS-C GENERATION RATE MEASUREMENTS.SMALL DW; PIERRET RF.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 6; PP. 505-511; BIBL. 20 REF.Article
GENERATION/RECOMBINATION OF CARRIERS IN P-N JUNCTIONS.MORGAN DV; ASHBURN P.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 7; PP. 85-86; BIBL. 6 REF.Article
MEASUREMENTS OF THE AVERAGE ENERGY PER ELECTRON-HOLE PAIR GENERATION IN SILICON BETWEEN 5-320OKCANALI C; MARTINI M.1972; I.E.E.E. TRANS. NUCL. SCI.; U.S.A.; DA. 1972; VOL. 19; NO 4; PP. 9-19; BIBL. 23 REF.Serial Issue
DEFECT-CONTROLLED GENERATION IN DEEPLY DEPLETED MOS-C STRUCTURES.SMALL DW; PIERRET RF.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 3; PP. 148-150; BIBL. 11 REF.Article
ANALYTICAL TREATMENT OF PLASMA INJECTED INTO AN ILLUMINATED PHOTOCONDUCTORWEBER WH; MARK P.1973; SOLID STATE COMMUNIC.; G.B.; DA. 1973; VOL. 12; NO 6; PP. 485-487; ABS. ALLEM.; BIBL. 6 REF.Serial Issue