CARACTERISTIQUES ET APPLICATIONS DES PLUS MARQUANTES DU GALLIUM ET DE SES COMPOSES.DE LA BRETEQUE P.1976; INDUSTR. NATION.; FR.; DA. 1976; NO 3; PP. 3-28; BIBL. 29 REF.Article

APPLICATIONS DE LA CATHODOLUMINESCENCE PULSEE A LA CARACTERISATION SPECTROSCOPIQUE ET SPATIALE DES SEMICONDUCTEURS III-VBOULOU MICHEL.1979; ; FRA; DA. 1979; 150 P.-PL.; 30 CM; BIBL. DISSEM.; TH. DOCT.-ING.: PHYS. MATER./LYON 1/1979/375Thesis

PLASMON-INTERBAND COUPLING IN GALLIUM COMPOUNDS.ROWE JE; TRACY JC; CHRISTMAN SB et al.1975; SURF. SCI.; NETHERL.; DA. 1975; VOL. 52; NO 2; PP. 277-284; BIBL. 12 REF.Article

P-GAAS/P-GA_1-XAL_XAS ISOTYPE HETEROJUNCTIONS IN DOUBLE HETEROSTRUCTURE LASER MATERIALHAKKI BW.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6054-6058; BIBL. 28 REF.Article

(GAAL)AS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS WITH GRADED COMPOSITION IN THE BASEMILLER DL; ASBECK PM; ANDERSON RJ et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 367-368; BIBL. 7 REF.Article

GAIN SUPPRESSION IN GAAS/ALGAAS TJS LASERSKAWANISHI H; PETERSEN PE.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 6; PP. 823-824; BIBL. 8 REF.Article

ELECTRONIC PROPERTIES OF FLAT-BAND SEMICONDUCTEUR HETEROSTRUCTURESWHITE SR; SHAM LJ.1981; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1981; VOL. 47; NO 12; PP. 879-882; BIBL. 18 REF.Article

SYNTHESIS AND CRYSTAL GROWTH OF GAAS AND GAP FOR SUBSTRATES.VON NEIDA AR; NIELSEN JW.1974; SOLID STATE TECHNOL.; U.S.A.; DA. 1974; VOL. 17; NO 4; PP. 90-98 (7P.); BIBL. 35 REF.Article

CARACTERISATION D'ARSENIURE DE GALLIUM ET DE PHOSPHURE DE GALLIUM PAR SPECTROSCOPIE RAMAN.MORHANGE JF; BESERMAN R.1978; DGRST-7570680; FR.; DA. 1978; PP. 1-32; BIBL. 12 REF.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

CINETIQUE DE LA DECOMPOSITION THERMIQUE DE GAP ET GAAS GAAS SOUS COUCHE DU FLUXSHURYGIN PM; MARBAKH AL; DENISOV VM et al.1972; DOKL. AKAD. NAUK S.S.S.R.; S.S.S.R.; DA. 1972; VOL. 204; NO 6; PP. 1419-1421; BIBL. 4 REF.Serial Issue

OBTENTION DE CRISTAUX DE GAS, GASE PAR LA METHODE TRANSPORT CHIMIQUE AVEC BR COMMA GENT DE TRANSPORTZUL'FUGARLY DI; GEJDAROV BA.1974; AZEERBAJDZH. KHIM. ZH.; S.S.S.R.; DA. 1974; NO 2; PP. 110-112; ABS. AZERB.; BIBL. 4 REF.Article

CHARACTERISTICS AND ANALYSIS OF CHANNELED SUBSTRATE NARROW STRIPE GAAS/GAALAS LASERSCURTIS JP; PLUMB RG; GOODWIN AR et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3444-3449; BIBL. 9 REF.Article

FORWARD BIAS VOLTAGE CHARACTERISTICS FOR (GAAL)AS AND (GAIN)(ASP) LASERSTHOMAS B; KAR A; HENSHALL GD et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 6; PP. 312-315; BIBL. 5 REF.Article

MOVPE GROWTH OF GA_1-XAL_XAS-GAAS QUANTUM WELL HETEROSTRUCTURESFRIJLINK PM; MALUENDA J.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 9; PART. 2; PP. L574-L576; BIBL. 4 REF.Article

ON THE EXPERIMENTAL DETERMINATION OF MANY-PARTICLE EFFECTS AT INTERBAND TRANSITIONSJUNGK G.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 105; NO 2; PP. 551-556; ABS. GER; BIBL. 26 REF.Article

THERMODYNAMIC STUDY OF SOLID CO-GA ALLOYS BY E.M.F. MEASUREMENTS USING THE SOLID ELECTROLYTEKATAYAMA I; KEMORI N; KOZUKA Z et al.1975; TRANS. JAP. INST. METALS; JAP.; DA. 1975; VOL. 16; NO NO 7; PP. 423-430; BIBL. 31 REF.Article

MODULATEURS DE LUMIERE PHOTOELASTIQUES A BASE DE CRISTAUX D'ARSENIURE DE GALLIUM ET DE PHOSPHURE DE GALLIUMGEJDUR SA; KRYLOV KI; PROKOPENKO VT et al.1982; OPT. SPEKTROSK.; ISSN 0030-4034; SUN; DA. 1982; VOL. 52; NO 4; PP. 729-732; BIBL. 9 REF.Article

AN ANALYTICAL SOLUTION OF THE LATERAL CURRENT SPEADING AND DIFFUSION PROBLEM IN NARROW OXIDE STRIPE (GAAL)AS/GAAS DH LASERSLENGYEL G; MEISSNER P; PATZAK E et al.1982; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 4; PP. 464-471; BIBL. 25 REF.Article

LUMINESCENCE PROPERTIES OF GAAS-GA_1-XAL_XAS DOUBLE HETEROSTRUCTURES AND MULTIQUANTUM-WELL SUPERLATTICES GROWN BY MOLECULAR BEAM EPITAXYPETROFF PM; WEISBUCH C; DINGLE R et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 12; PP. 965-967; BIBL. 14 REF.Article

MAGNETOSTATIC FIELD EFFECT ON THRESHOLD CURRENT IN A GAAS/AL Y GA_1-YAS DOUBLE-HETEROSTRUCTURE LASERHSIEH HC; LEE GY.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4414-4417; BIBL. 16 REF.Article

MOBILITY ENHANCEMENT IN INVERTED AL_XGA_1-XAS/GAAS MODULATION DOPED STRUCTURES AND ITS DEPENDENCE ON DONOR-ELECTRON SEPARATIONMORKOC H; DRUMMOND TJ; THORNE RE et al.1981; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 12; PP. L913-L916; BIBL. 14 REF.Article

GAAS AND GAP AMORPHOUS-FILM/CRYSTAL JUNCTIONSKUMABE K; MATSUMOTO N.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; SUPPL. 2; PP. 119-122; BIBL. 3 REF.Conference Paper

AUGER RECOMBINATION CROSS SECTION ASSOCIATED WITH DEEP TRAPS IN SEMICONDUCTORSRIDDOCH FA; JAROS M.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 33; PP. 6181-6188; BIBL. 19 REF.Article

HETEROJONCTIONS GA_1-XAL_XAS/GAAS REALISES PAR EPITAXIE LIQUIDE AVEC ENTRAINEMENT CONTROLE DE SOLUTION: CROISSANCE ET CARACTERISATIONBENOIT JACQUES.1979; ; FRA; DA. 1979; DGRST/77 7 1001; 27 P.; 30 CM; BIBL. 11 REF.; ACTION CONCERTEE: COMPOSANTS ET CIRCUITS MICROMINIATURISESReport

CALCUL DE L'EFFICACITE LUMINEUSE ET DES RENDEMENTS QUANTIQUES DES DIODES LUMINESCENTES PAR INTEGRATION DIRECTE DES FONCTIONS GAUSSIENNESHU KAI SHENG.1978; ACTA PHYS. SINICA; CHN; DA. 1978; VOL. 27; NO 6; PP. 691-699; ABS. ENG; BIBL. 8 REF.Article