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CARACTERISTIQUES ET APPLICATIONS DES PLUS MARQUANTES DU GALLIUM ET DE SES COMPOSES.DE LA BRETEQUE P.1976; INDUSTR. NATION.; FR.; DA. 1976; NO 3; PP. 3-28; BIBL. 29 REF.Article

APPLICATIONS DE LA CATHODOLUMINESCENCE PULSEE A LA CARACTERISATION SPECTROSCOPIQUE ET SPATIALE DES SEMICONDUCTEURS III-VBOULOU MICHEL.1979; ; FRA; DA. 1979; 150 P.-PL.; 30 CM; BIBL. DISSEM.; TH. DOCT.-ING.: PHYS. MATER./LYON 1/1979/375Thesis

PLASMON-INTERBAND COUPLING IN GALLIUM COMPOUNDS.ROWE JE; TRACY JC; CHRISTMAN SB et al.1975; SURF. SCI.; NETHERL.; DA. 1975; VOL. 52; NO 2; PP. 277-284; BIBL. 12 REF.Article

P-GAAS/P-GA1-XALXAS ISOTYPE HETEROJUNCTIONS IN DOUBLE HETEROSTRUCTURE LASER MATERIALHAKKI BW.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6054-6058; BIBL. 28 REF.Article

CATION AND ANION IDEAL VACANCY INDUCED GAP LEVELS IN SOME III-V COMPOUND SEMICONDUCTORSDAS SARMA S; MADHUKAR A.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 3; PP. 183-186; BIBL. 18 REF.Article

(GAAL)AS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS WITH GRADED COMPOSITION IN THE BASEMILLER DL; ASBECK PM; ANDERSON RJ et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 367-368; BIBL. 7 REF.Article

GAIN SUPPRESSION IN GAAS/ALGAAS TJS LASERSKAWANISHI H; PETERSEN PE.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 6; PP. 823-824; BIBL. 8 REF.Article

ELECTRONIC PROPERTIES OF FLAT-BAND SEMICONDUCTEUR HETEROSTRUCTURESWHITE SR; SHAM LJ.1981; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1981; VOL. 47; NO 12; PP. 879-882; BIBL. 18 REF.Article

SYNTHESIS AND CRYSTAL GROWTH OF GAAS AND GAP FOR SUBSTRATES.VON NEIDA AR; NIELSEN JW.1974; SOLID STATE TECHNOL.; U.S.A.; DA. 1974; VOL. 17; NO 4; PP. 90-98 (7P.); BIBL. 35 REF.Article

STUDY ON THE POSSIBILITY OF NATIVE OXIDE REMOVAL FROM GAP AND GAAS SURFACE BY ETCHING, USING MODEL EXPERIMENTSSOHOGYI M.1982; CRYST. RES. TECHNOL. (1979); ISSN 0232-1300; DDR; DA. 1982; VOL. 17; NO 9; PP. 1129-1134; ABS. GER; BIBL. 16 REF.Article

PREPARATION OF ORGANOGALLIUM COMPOUNDS FROM ORGANOLITHIUM REAGENTS AND GALLIUM CHLORIDE. INFRARED MAGNETIC RESONANCE, AND MASS SPECTRAL STUDIES OF ALKYLGALLIUM COMPOUNDSKOVAR RA; DERR H; BRANDAU D et al.1975; INORG. CHEM.; U.S.A.; DA. 1975; VOL. 14; NO 11; PP. 2809-2814; BIBL. 19 REF.Article

CARACTERISATION D'ARSENIURE DE GALLIUM ET DE PHOSPHURE DE GALLIUM PAR SPECTROSCOPIE RAMAN.MORHANGE JF; BESERMAN R.1978; DGRST-7570680; FR.; DA. 1978; PP. 1-32; BIBL. 12 REF.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

DEFECTS IN AMORPHOUS III-V COMPOUNDSTHEYE ML; GHEORGHIU A.1982; SOLAR ENERGY MATERIALS; ISSN 0165-1633; NLD; DA. 1982; VOL. 8; NO 1-3; PP. 331-340; BIBL. 34 REF.Article

CINETIQUE DE LA DECOMPOSITION THERMIQUE DE GAP ET GAAS GAAS SOUS COUCHE DU FLUXSHURYGIN PM; MARBAKH AL; DENISOV VM et al.1972; DOKL. AKAD. NAUK S.S.S.R.; S.S.S.R.; DA. 1972; VOL. 204; NO 6; PP. 1419-1421; BIBL. 4 REF.Serial Issue

PHOTOLUMINESCENCE D'UNE HETEROJONCTION DOUBLE DONT ON EXCITE L'EMETTEUR A LARGE BANDEGARBUZOV DZ; KHALFIN VB; TULASHVILI EH V et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 2; PP. 242-246; BIBL. 4 REF.Article

RELATION ENTRE LA TENSION PHOTOVOLTAIQUE DU VOLUME ET LE MECANISME DU PASSAGE DU COURANT CONTINU DANS DES HETEROSTRUCTURES REGULIERES DE ALGAASARIPOV KH K; RUMYANTSEV VD; YUFEREV VS et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 6; PP. 1032-1036; BIBL. 9 REF.Article

INFLUENCE OF BIAS CURRENT ON THE MODULATION BEHAVIOUR OF GAAS-GAALAS LEDSHARTH W.1981; AEUE, ARCH. ELEKTRON. UEBERTRAGUNGSTECH.; ISSN 0001-1096; DEU; DA. 1981; VOL. 35; NO 9; PP. 373-376; ABS. GER; BIBL. 9 REF.Article

SINGLE MODE LASER WITH A V-SHAPED ACTIVE LAYER GROWN BY METALORAGNIC CHEMICAL VAPOR DEPOSITION: A V-SHAPED DOUBLE HETEROSTRUCTURE LASERMORI Y; MATSUDA O; WATANABE N et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 9; PP. 5429-5433; BIBL. 10 REF.Article

SIZE FLUCTUATIONS AND HIGH-ENERGY LASER OPERATION OF ALXGA1-XAS-ALAS-GAAS QUANTUM-WELL HETEROSTRUCTURESHOLONYAK N JR; LAIDIG WD; CAMRAS MD et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 11; PP. 6777-6782; BIBL. 24 REF.Article

BACKSIDE-GATED MODULATION-DOPED GAAS-(ALGA)AS HETEROJUNCTION INTERFACESTORMER HL; GOSSARD AC; WIEGMANN W et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 6; PP. 493-495; BIBL. 11 REF.Article

DIRECT OBSERVATION OF DISLOCATIONS IN GAP CRYSTALSHILGARTH J.1978; J. MATER. SCI.; GBR; DA. 1978; VOL. 13; NO 12; PP. 2697-2702; BIBL. 8 REF.Article

OBTENTION DE CRISTAUX DE GAS, GASE PAR LA METHODE TRANSPORT CHIMIQUE AVEC BR COMMA GENT DE TRANSPORTZUL'FUGARLY DI; GEJDAROV BA.1974; AZEERBAJDZH. KHIM. ZH.; S.S.S.R.; DA. 1974; NO 2; PP. 110-112; ABS. AZERB.; BIBL. 4 REF.Article

CHARACTERISTICS AND ANALYSIS OF CHANNELED SUBSTRATE NARROW STRIPE GAAS/GAALAS LASERSCURTIS JP; PLUMB RG; GOODWIN AR et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3444-3449; BIBL. 9 REF.Article

FORWARD BIAS VOLTAGE CHARACTERISTICS FOR (GAAL)AS AND (GAIN)(ASP) LASERSTHOMAS B; KAR A; HENSHALL GD et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 6; PP. 312-315; BIBL. 5 REF.Article

MOVPE GROWTH OF GA1-XALXAS-GAAS QUANTUM WELL HETEROSTRUCTURESFRIJLINK PM; MALUENDA J.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 9; PART. 2; PP. L574-L576; BIBL. 4 REF.Article

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