DIVERGENCE DUE A LA DIFFRACTION DU RAYONNEMENT DES LASERS HETEROGENES A INJECTION A BASE DE SOLUTIONS SOLIDES QUATERNAIRES, ISOPERIODIQUES AVEC GASBDRAKIN AE; ELISEEV PG; SVERDLOV BN et al.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 5; PP. 949-954; BIBL. 13 REF.Article

RECENT DEVELOPMENTS FOR THE ALGAASSB CELLTIMMONS ML; BEDAIR SM; MARKUNAS RJ et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 663-668; BIBL. 10 REF.Conference Paper

SPECTRE DE PHOTOEMISSION DE L'ALLIAGE TERNAIRE GA_1-XAL_XSBANCE C; AMAMOU A.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 103; NO 1; PP. 441-449; ABS. ENG; BIBL. 26 REF.Article

THE DEPENDENCE OF SURFACE MORPHOLOGY OF GASB- AND AL_XGA_1-XSB EPITAXIAL LAYERS ON THE CONDITIONS OF LPE GROWTHYORDANOVA IM; PRAMATAROVA LD.1983; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1983; VOL. 18; NO 6; PP. 835-841; ABS. RUS; BIBL. 5 REF.Article

OHMIC CONTACTS TO P- AND N-TYPE GASBHEINZ C.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 54; NO 2; PP. 247-254; BIBL. 12 REF.Article

ONE-DIMENSIONAL ORGANIC SUPERCONDUCITIVITY: AN INVESTIGATION THROUGH ELECTRON SCHOTTKY TUNNELLING IN N/GASB-(TMTSF)₂PF₆ JUNCTIONS UNDER PRESSUREMORE C; ROGER G; SORBIER JP et al.1981; J. PHYSIQUE, LETT.; ISSN 0302-072X; FRA; DA. 1981; VOL. 42; NO 13; PP. L313-L317; BIBL. 22 REF.Article

High-speed modulation characteristics of a GaSb/AlGaSb multiquantum-well laser diodeTOBA, H; NOSU, K.Electronics Letters. 1987, Vol 23, Num 5, pp 188-190, issn 0013-5194Article

Observation of room temperature excitons in GaSb-AlGaSb multi-quantum wellsMIYAZAWA, T; TARUCHA, S; OHMORI, Y et al.Japanese journal of applied physics. 1986, Vol 25, Num 3, pp L200-L202, issn 0021-4922, 2Article

Room temperature operation of Al_0.17Ga_0.83Sb/GaSb multi-quantum well lasers grown by molecular beam epitaxyOHMORI, Y; TARUCHA, S; HORIKOSHI, Y et al.Japanese journal of applied physics. 1984, Vol 23, Num 2, pp L94-L96, issn 0021-4922Article

TERNARY III-V SOLAR CELLS FOR MULTICOLOR APPLICATIONSFRAAS LM; SHIN BK; CAPE JA et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 655-662; BIBL. 11 REF.Conference Paper

NONLINEAR OPTICAL STUDIES OF PICOSECOND RELAXATION TIMES OF ELECTRONS IN N-GAAS AND N-GASBKASH K; WOLFF PA; BONNER WA et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 2; PP. 173-175; BIBL. 7 REF.Article

ROLE OF DIELECTRIC SCREENING IN AUGER RECOMBINATION IN SEMICONDUCTORSTAKESHIMA M.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 6; PP. 3192-3202; BIBL. 24 REF.Article

ELECTRONIC PROPERTIES OF FLAT-BAND SEMICONDUCTEUR HETEROSTRUCTURESWHITE SR; SHAM LJ.1981; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1981; VOL. 47; NO 12; PP. 879-882; BIBL. 18 REF.Article

ION-BEAM CRYSTALLOGRAPHY OF INAS-GASB SUPERLATTICESCHU WK; SARIS FW; CHANG CA et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 4; PP. 1999-2010; BIBL. 23 REF.Article

LOW DARK CURRENT GAALASSB PHOTODIODESCHIN R; HILL CM.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 4; PP. 332-333; BIBL. 11 REF.Article

INFLUENCE OF MECHANICAL VIBRATIONS ON MICROSCOPIC GROWTH RATES IN GASB PULLED CRYSTALSQUANG NV; HAYAKAWA Y; KUMAGAWA M et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 2; PP. 329-333; BIBL. 10 REF.Article

Oxidation study by Auger electron spectroscopy and electron energy-loss spectroscopy of GaSb (001) surfaces grown by molecular-beam epitaxyRAISIN, C; DA SILVA, F. W. O; LASSABATERE, L et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 1, pp 68-74, issn 0734-211X, 7 p.Article

Study of Short- and Long-Term Effectiveness of Ammonium Sulfide as Surface Passivation for InAs/GaSb Superlattices Using X-Ray Photoelectron SpectroscopyBANERJEE, Koushik; GHOSH, Siddhartha; PLIS, Elena et al.Journal of electronic materials. 2010, Vol 39, Num 10, pp 2210-2214, issn 0361-5235, 5 p.Article

Préparation et étude de photodiodes diffusées P⁺N à Ga Al (As) Sb = Preparation and study of GaAl(As)Sb p⁺n diffused photodiodesBELATOUI, Tayeb.1985, 127 pThesis

Influence des dislocations sur la grandeur du courant inverse des jonctions p-n de solutions solides GaAs1-xSbxKARYAEV, V. N; SAVEL'EV, I. G.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 7, pp 1205-1210, issn 0015-3222Article

Recent investigations on the growth of antimony based semiconductorsBHAT, H. L.SPIE proceedings series. 1998, pp 221-227, isbn 0-8194-2756-X, 2VolConference Paper

2E_g transitions in GaSb-AlSb quantum-well structuresFORCHEL, A; CEBULLA, U; TRÄNKLE, G et al.Physical review letters. 1986, Vol 57, Num 25, pp 3217-3220, issn 0031-9007Article

Compositional relation of GaAs_xSb_1-x and related compounds in metalorganic chemical vapor deposition using tBAs and TMSb as group V precursorsWATANABE, N; IWAMURA, Y.Japanese journal of applied physics. 1996, Vol 35, Num 1A, pp 16-21, issn 0021-4922, 1Article

Analysis of threshold current density in 2•2 μm GaInAsSb/GaAlAsSb.GaSb DH lasersBROSSON, P; BENOIT, J; JOULLIE, A et al.Electronics Letters. 1987, Vol 23, Num 8, pp 417-419, issn 0013-5194Article

Nanosecond pulsed laser induced self-organized nano-dots patterns on GaSb surfaceYOSHIDA, Yutaka; OOSAWA, Kazuya; WAJIMA, Jyunya et al.Applied surface science. 2014, Vol 307, pp 24-27, issn 0169-4332, 4 p.Article