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ELECTRICAL AND PHOTOELECTRICAL CHARACTERIZATION OF N-GAXAL1-XSB-PGASB HETEROJUNCTIONSHEN J; KITAMURA N; KAKEHI M et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 7; PART. 1; PP. 1053-1055; BIBL. 16 REF.Article

DIVERGENCE DUE A LA DIFFRACTION DU RAYONNEMENT DES LASERS HETEROGENES A INJECTION A BASE DE SOLUTIONS SOLIDES QUATERNAIRES, ISOPERIODIQUES AVEC GASBDRAKIN AE; ELISEEV PG; SVERDLOV BN et al.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 5; PP. 949-954; BIBL. 13 REF.Article

RECENT DEVELOPMENTS FOR THE ALGAASSB CELLTIMMONS ML; BEDAIR SM; MARKUNAS RJ et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 663-668; BIBL. 10 REF.Conference Paper

SPECTRE DE PHOTOEMISSION DE L'ALLIAGE TERNAIRE GA1-XALXSBANCE C; AMAMOU A.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 103; NO 1; PP. 441-449; ABS. ENG; BIBL. 26 REF.Article

THE DEPENDENCE OF SURFACE MORPHOLOGY OF GASB- AND ALXGA1-XSB EPITAXIAL LAYERS ON THE CONDITIONS OF LPE GROWTHYORDANOVA IM; PRAMATAROVA LD.1983; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1983; VOL. 18; NO 6; PP. 835-841; ABS. RUS; BIBL. 5 REF.Article

GROWTH KINETICS OF LPE GA0.83AL0.17SB LAYERS GROWN FROM SUPERCOOLED SOLUTIONSMEBARKI M; SALSAC P; JOULLIE A et al.1983; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1983; VOL. 61; NO 3; PP. 637-640; BIBL. 17 REF.Article

GAP, ALGAAS/GAAS, ALGAASSB/G-SB PHOTOVOLTAIC DEVICES AND CHARACTERISTICSSASAKI A; ISHIO K; NODA S et al.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; SUPPL. NO 2; PP. 93-98; BIBL. 11 REF.Conference Paper

THE ORGANOMETALLIC VPE GROWTH OF GASB AND GAAS1-X SBX USING TRIMETHYLANTIMONYCOOPER CB III; SAXENA RR; LUDOWISE MJ et al.1982; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 6; PP. 1001-1010; BIBL. 15 REF.Article

OHMIC CONTACTS TO P- AND N-TYPE GASBHEINZ C.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 54; NO 2; PP. 247-254; BIBL. 12 REF.Article

ONE-DIMENSIONAL ORGANIC SUPERCONDUCITIVITY: AN INVESTIGATION THROUGH ELECTRON SCHOTTKY TUNNELLING IN N/GASB-(TMTSF)2PF6 JUNCTIONS UNDER PRESSUREMORE C; ROGER G; SORBIER JP et al.1981; J. PHYSIQUE, LETT.; ISSN 0302-072X; FRA; DA. 1981; VOL. 42; NO 13; PP. L313-L317; BIBL. 22 REF.Article

Electricity generation from thermal irradiation governed by GaSb active layerYU WANG; XINGWANG ZHANG; XIULAN ZHANG et al.Renewable energy. 2012, Vol 48, pp 231-237, issn 0960-1481, 7 p.Article

SPATIALLY EXTENDED OPTICAL INTERFACE MODES IN A TWO-LAYER PERIODIC STRUCTUREPOKATILOV EP; BERIL SI.1982; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1982; VOL. 110; NO 1; PP. K75-K78; BIBL. 4 REF.Article

TUNNELING IN THE REVERSE DARK CURRENT OF GAA/ASSB AVALANCHE PHOTODIODESTABATABAIE N; STILLMAN GE; CHIN R et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 5; PP. 415-417; BIBL. 20 REF.Article

THEORETICAL STUDY OF SINGLE VACANCIES IN GASBBRESCANSIN LM; FAZZIO A.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 105; NO 1; PP. 339-345; ABS. FRE; BIBL. 21 REF.Article

Optically pumped GaSb/Al0.6Ga0.4Sb multiquantum well lasers operating in the λ=1.5-1.6 μm regionTEMKIN, H; TSANG, W. T.Journal of applied physics. 1984, Vol 55, Num 5, pp 1413-1415, issn 0021-8979Article

Preparation of 1.78-μm wavelength Al0.2Ga0.8Sb/GaSb double-heterostructure lasers by molecular beam epitaxyTSANG, W. T; OLSSON, N. A.Applied physics letters. 1983, Vol 43, Num 1, pp 8-10, issn 0003-6951Article

High-speed modulation characteristics of a GaSb/AlGaSb multiquantum-well laser diodeTOBA, H; NOSU, K.Electronics Letters. 1987, Vol 23, Num 5, pp 188-190, issn 0013-5194Article

Observation of room temperature excitons in GaSb-AlGaSb multi-quantum wellsMIYAZAWA, T; TARUCHA, S; OHMORI, Y et al.Japanese journal of applied physics. 1986, Vol 25, Num 3, pp L200-L202, issn 0021-4922, 2Article

Room temperature operation of Al0.17Ga0.83Sb/GaSb multi-quantum well lasers grown by molecular beam epitaxyOHMORI, Y; TARUCHA, S; HORIKOSHI, Y et al.Japanese journal of applied physics. 1984, Vol 23, Num 2, pp L94-L96, issn 0021-4922Article

TERNARY III-V SOLAR CELLS FOR MULTICOLOR APPLICATIONSFRAAS LM; SHIN BK; CAPE JA et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 655-662; BIBL. 11 REF.Conference Paper

NONLINEAR OPTICAL STUDIES OF PICOSECOND RELAXATION TIMES OF ELECTRONS IN N-GAAS AND N-GASBKASH K; WOLFF PA; BONNER WA et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 2; PP. 173-175; BIBL. 7 REF.Article

ROLE OF DIELECTRIC SCREENING IN AUGER RECOMBINATION IN SEMICONDUCTORSTAKESHIMA M.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 6; PP. 3192-3202; BIBL. 24 REF.Article

ELECTRONIC PROPERTIES OF FLAT-BAND SEMICONDUCTEUR HETEROSTRUCTURESWHITE SR; SHAM LJ.1981; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1981; VOL. 47; NO 12; PP. 879-882; BIBL. 18 REF.Article

MECANISME DE LA DISRUPTION DES JONCTIONS P-N A BASE DE SOLUTION SOLIDES DE GAAS1-XSBXVUL A YA; POLYANSKAYA TA; SAVEL'EV IG et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 1; PP. 134-138; BIBL. 12 REF.Article

ION-BEAM CRYSTALLOGRAPHY OF INAS-GASB SUPERLATTICESCHU WK; SARIS FW; CHANG CA et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 4; PP. 1999-2010; BIBL. 23 REF.Article

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