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Results 1 to 25 of 2053

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ELECTRICAL AND PHOTOELECTRICAL CHARACTERIZATION OF N-GAXAL1-XSB-PGASB HETEROJUNCTIONSHEN J; KITAMURA N; KAKEHI M et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 7; PART. 1; PP. 1053-1055; BIBL. 16 REF.Article

LOW BANDGAP (0.7 TO 1.1 EV) SOLAR CELLS IN THE GAALASSB/GASB SYSTEMLIU YZ; YANG HT; HARRIS JS JR et al.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 341-345; BIBL. 9 REF.Conference Paper

ETUDE DE LA STRUCTURE DE BANDES DE L'ALLIAGE TERNAIRE GA1-XALXSBZEIN EDDINE ADNAN.1981; ; FRA; DA. 1981; 158 P.; 30 CM; BIBL. 5 P.; TH.: SCI./MONTPELLIER 2/1981/599Thesis

INVESTIGATION OF IMPURITY VARIATIONS BY CATHODOLUMINESCENCE IMAGING: APPLICATION TO GASB:TECHIN AK; BONNER WA.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 3; PP. 248-251; BIBL. 22 REF.Article

ROLE OF CRYSTALLOGRAPHIC POLAR SURFACES IN X-RAY SPECTROMETRY.BHALLA AS.1974; X-RAY SPECTROM.; G.B.; DA. 1974; VOL. 3; NO 2; PP. 99-100; BIBL. 9 REF.Article

LUMINESCENCE FROM INAS-GASB SUPERLATTICESVOISIN P; BASTARD G; GONCALVES DA SILVA CET et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 39; NO 1; PP. 79-82; BIBL. 14 REF.Article

CINETIQUE DE FORMATION ET DE MIGRATION DE DEFAUTS D'ANTISTRUCTURE DANS LES COMPOSES AIIIBV ET INFLUENCE DE CES DEFAUTS SUR L'AUTODIFFUSIONVOROB'EV VM; MURAV'EV VA; PANTELEEV VA et al.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 12; PP. 3535-3540; BIBL. 14 REF.Article

THE DISSOCIATION ENERGY OF THE MOLECULE GASBPIACENTE V; BALDUCCI G.1974; HIGH TEMPER. SCI.; U.S.A.; DA. 1974; VOL. 6; NO 3; PP. 254-258; BIBL. 17 REF.Article

ZN DIFFUSION IN GAAL ASSB IN GASBCHIN R; LAW HD.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 1; PP. 227-228; BIBL. 7 REF.Article

IMPACT IONIZATION IN GA1-XALXSB: AN ALTERNATIVE INTERPRETATIONKASEMSET D.1981; I.E.E.E. J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 9; PP. 1595-1597; BIBL. 5 REF.Article

PHONON DISPERSION CURVES NEAR THE COVALENT-METALLIC TRANSITION PRESSURE OF GAAS, GASB, AND INSBSOMA T; SAITO Y; MATSUO H et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 103; NO 2; PP. K173-K177; BIBL. 20 REF.Article

SATURATION CHARACTERISTICS OF P-TYPE SEMICONDUCTORS OVER THE CO2 LASER SPECTRUMJAMES RB; SMITH DL.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 5; PP. 2836-2839; BIBL. 17 REF.Article

SUR LA REACTION CHIMIQUE ENTRE LES ANTIMONIURES DE IN ET GA EN PHASE LIQUIDEGLAZOV VM; TIMOSHIN AS; UFIMTSEV VB et al.1974; DOKL. AKAD. NAUK S.S.S.R.; S.S.S.R.; DA. 1974; VOL. 218; NO 5; PP. 1097-1099; BIBL. 12 REF.Article

ETUDE DE L'EFFET HALL DE L'ANTIMONIURE DE GALLIUM PRES DE LA TEMPERATURE DE FUSION A L'ETAT LIQUIDEGLAZOV VM; KOL'TSOV VB; GAFOROV S et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 11; PP. 1959-1962; BIBL. 17 REF.Article

CORE EXCITONS IN GA-V COMPOUND SEMICONDUCTORSHJALMARSON HP; BUTTNER H; DOW JD et al.1981; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1981; VOL. 85; NO 5; PP. 293-294; BIBL. 11 REF.Article

GALLIUM ANTIMONIDE LPE GROWTH FROM GA-RICH AND SB-RICH SOLUTIONS.WOELK C; BENZ KW.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 27; PP. 177-182; BIBL. 25 REF.Article

DIVERGENCE DUE A LA DIFFRACTION DU RAYONNEMENT DES LASERS HETEROGENES A INJECTION A BASE DE SOLUTIONS SOLIDES QUATERNAIRES, ISOPERIODIQUES AVEC GASBDRAKIN AE; ELISEEV PG; SVERDLOV BN et al.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 5; PP. 949-954; BIBL. 13 REF.Article

ETUDE DE LA MOBILITE DES ELECTRONS DANS GASBNKISELEVA EV; PETROVSKIJ VI.1981; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1981; VOL. 17; NO 12; PP. 2133-2135; BIBL. 4 REF.Article

TEMPERATURE DEPENDENCE OF THE L6C-GAMMA 6C ENERGY GAP IN GALLIUM ANTIMONIDEJOULLIE A; ZEIN EDDIN A; GIRAULT B et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 2; PP. 928-930; BIBL. 39 REF.Article

PROPRIETES ELECTRONIQUES DES SURFACES DE GASB CLIVEES EN ULTRA-VIDESOONCKINDT L; BONNET J; LASSABATERE L et al.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 78; NO 2; PP. 167-176; ABS. ENG; BIBL. 13 REF.Article

Optically pumped GaSb/Al0.6Ga0.4Sb multiquantum well lasers operating in the λ=1.5-1.6 μm regionTEMKIN, H; TSANG, W. T.Journal of applied physics. 1984, Vol 55, Num 5, pp 1413-1415, issn 0021-8979Article

Preparation of 1.78-μm wavelength Al0.2Ga0.8Sb/GaSb double-heterostructure lasers by molecular beam epitaxyTSANG, W. T; OLSSON, N. A.Applied physics letters. 1983, Vol 43, Num 1, pp 8-10, issn 0003-6951Article

GROWTH KINETICS OF LPE GA0.83AL0.17SB LAYERS GROWN FROM SUPERCOOLED SOLUTIONSMEBARKI M; SALSAC P; JOULLIE A et al.1983; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1983; VOL. 61; NO 3; PP. 637-640; BIBL. 17 REF.Article

SPECTRE DE PHOTOEMISSION DE L'ALLIAGE TERNAIRE GA1-XALXSBANCE C; AMAMOU A.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 103; NO 1; PP. 441-449; ABS. ENG; BIBL. 26 REF.Article

SPECTRE DE PHOTOEMISSION DE L'ALLIAGE TERNAIRE GA1-XALXSBANCE C; AMAMOU A.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 103; NO 1; PP. 441-449; ABS. ENG; BIBL. 26 REF.Article

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