SECONDARY ION MASS SPECTROMETRIC IMAGE DEPTH PROFILE ANALYSIS OF THIN LAYERSCHU PK; HARRIS WC JR; MORRISON GH et al.1982; ANAL. CHEM. (WASH.); ISSN 0003-2700; USA; DA. 1982; VOL. 54; NO 13; PP. 2208-2210; BIBL. 13 REF.Article

DOSAGE DU CHROME DANS L'ARSENIURE DE GALLIUM PAR SPECTROMETRIE D'ABSORPTION ATOMIQUE EN FOUR GRAPHITEGUENAIS B; POUDOULEC A; MINIER M et al.1982; ANALUSIS; ISSN 0365-4877; FRA; DA. 1982; VOL. 10; NO 2; PP. 78-82; ABS. ENG; BIBL. 9 REF.Article

PHOTON STIMULATED ION DESORPTION OF H⁺ IONS FROM GAAS(110)/H₂OTHORNTON G; ROSENBERG RA; REHN V et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 40; NO 2; PP. 131-133; BIBL. 17 REF.Article

DIFFERENTIAL PULSE POLAROGRAPHIC DETERMINATION OF CHROMIUM IN GALLIUM ARSENIDEFERRI D; ZIGNANI F; BULDINI PL et al.1982; FRESENIUS Z. ANAL.; ISSN 0016-1152; DEU; DA. 1982; VOL. 313; NO 7; PP. 539-541; BIBL. 5 REF.Article

ELECTRONIC STRUCTURE OF THE AL-GAAS (110) SURFACE CHEMISORPTION SYSTEMCHELIKOWSKY JR; CHADI DJ; COHEN ML et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 8; PP. 4013-4022; BIBL. 30 REF.Article

USE OF IMPLANTED SAMPLES AS STANDARDS IN SPARK-SOURCE MASS SPECTROMETRY WITH APPLICATION TO THE ANALYSIS OF III-V SEMICONDUCTORSGAUNEAU M; RUPERT A; MINIER M et al.1982; ANAL. CHIM. ACTA; ISSN 0003-2670; NLD; DA. 1982; VOL. 135; NO 2; PP. 193-204; BIBL. 15 REF.Article