CAPACITANCE/VOLTAGE CHARACTERISTICS OF SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR (SIS) STRUCTURENAGAI K; HAYASHI Y; SEKIGAWA T et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 376-377; BIBL. 2 REF.Article

(GAAL)AS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS WITH GRADED COMPOSITION IN THE BASEMILLER DL; ASBECK PM; ANDERSON RJ et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 367-368; BIBL. 7 REF.Article

GAIN SUPPRESSION IN GAAS/ALGAAS TJS LASERSKAWANISHI H; PETERSEN PE.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 6; PP. 823-824; BIBL. 8 REF.Article

IMPURITY PHOTOLUMINESCENCE IN GAAS/GA_1-XAL_XAS MULTIPLE QUANTUM WELLSLAMBERT B; DEVEAUD B; REGRENY A et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 43; NO 6; PP. 443-446; BIBL. 10 REF.Article

NUMERICAL SIMULATION OF GAAS/GAALAS HETEROJUNCTION BIPOLAR TRANSISTORSASBECK PM; MILLER DL; ASATOURIAN R et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 12; PP. 403-406; BIBL. 9 REF.Article

PHOTOLUMINESCENCE D'UNE HETEROJONCTION DOUBLE DONT ON EXCITE L'EMETTEUR A LARGE BANDEGARBUZOV DZ; KHALFIN VB; TULASHVILI EH V et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 2; PP. 242-246; BIBL. 4 REF.Article

RELATION ENTRE LA TENSION PHOTOVOLTAIQUE DU VOLUME ET LE MECANISME DU PASSAGE DU COURANT CONTINU DANS DES HETEROSTRUCTURES REGULIERES DE ALGAASARIPOV KH K; RUMYANTSEV VD; YUFEREV VS et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 6; PP. 1032-1036; BIBL. 9 REF.Article

INFLUENCE OF BIAS CURRENT ON THE MODULATION BEHAVIOUR OF GAAS-GAALAS LEDSHARTH W.1981; AEUE, ARCH. ELEKTRON. UEBERTRAGUNGSTECH.; ISSN 0001-1096; DEU; DA. 1981; VOL. 35; NO 9; PP. 373-376; ABS. GER; BIBL. 9 REF.Article

SIZE FLUCTUATIONS AND HIGH-ENERGY LASER OPERATION OF AL_XGA_1-XAS-ALAS-GAAS QUANTUM-WELL HETEROSTRUCTURESHOLONYAK N JR; LAIDIG WD; CAMRAS MD et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 11; PP. 6777-6782; BIBL. 24 REF.Article

BACKSIDE-GATED MODULATION-DOPED GAAS-(ALGA)AS HETEROJUNCTION INTERFACESTORMER HL; GOSSARD AC; WIEGMANN W et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 6; PP. 493-495; BIBL. 11 REF.Article

AN ANALYTICAL SOLUTION OF THE LATERAL CURRENT SPREADING AND DIFFUSION PROBLEM IN NARROW OXIDE STRIPE (GAAL)AS/GAAS DH LASERSLENGYEL G; MEISSNER P; PATZAK E et al.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 4; PP. 618-625; BIBL. 25 REF.Article

HIGH-SPEED GAALAS-GAAS HETERO-JUNCTION BIPOLAR TRANSISTORS WITH NEAR-BALLISTIC OPERATIONANKRI D; SCHAFF WJ; SMITH P et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 4; PP. 147-149; BIBL. 6 REF.Article

TUNNELLING THROUGH GAAS-AL_XGA_1-XAS-GAAS DOUBLE HETEROJUNCTIONSDELAGEBEAUDEUF D; DELESCLUSE P; ETIENNE P et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 2; PP. 85-87; BIBL. 9 REF.Article

OFFSET CHANNEL INSULATED GATE FIELD-EFFECT TRANSISTORSCHEN CY; CHO AY; GOSSARD AC et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 4; PP. 360-362; BIBL. 16 REF.Article

GAZ ELECTRONIQUE BIDIMENSIONNEL DANS UNE HETEROJONCTION. PROPRIETES ET APPLICATIONSVOLKOV VA; GRODNENSKIJ IM.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 3; PP. 195-207; BIBL. 48 REF.Article

DEPENDENCE OF ELECTRON MOBILITY IN MODULATION-DOPED GAAS-(ALGA)AS HETEROJUNCTION INTERFACE ON ELECTRON DENSITY AND AL CONCENTRATIONSTOERMER HL; GOSSARD AC; WIEGMANN W et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; NLD; DA. 1981; VOL. 39; NO 11; PP. 912-914; BIBL. 21 REF.Article

ELECTRONIC PROPERTIES OF FLAT-BAND SEMICONDUCTEUR HETEROSTRUCTURESWHITE SR; SHAM LJ.1981; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1981; VOL. 47; NO 12; PP. 879-882; BIBL. 18 REF.Article

HOT ELECTRON VELOCITY CORRELATION AND DIFFUSION IN A MANY LAYERED HETEROSTRUCTUREMATULIONIS A; POZELA J; STARIKOV E et al.1981; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1981; VOL. 68; NO 2; PP. K149-K152; BIBL. 5 REF.Article

OPERATION OF A DOUBLE HETEROJUNCTION GAAS/ALGAAS INJECTION LASER WITH A P-TYPE ACTIVE LAYER IN A STRONG MAGNETIC FIELDBLUYSSEN HJA; VAN RUYVEN LJ.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 11; PP. 2190-2195; BIBL. 11 REF.Article

THREE PERIOD (A1,GA)AS/GAAS HETEROSTRUCTURES WITH EXTREMELY HIGH MOBILITIESDRUMMOND TJ; KOPP W; MORKOC H et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 13; PP. 442-444; BIBL. 12 REF.Article

THE VARIATION OF THE P/N JUNCTION POSITION IN GAAS/GAALAS DOUBLE HETEROSTRUCTURES GROWN BY LOW PRESSURE MO VPEHERSEE SD; BALDY M; DUCHEMIN JP et al.1983; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1983; VOL. 12; NO 2; PP. 345-357; BIBL. 6 REF.Article

INFLUENCE OF SUBSTRATE TEMPERATURE ON THE MOBILITY OF MODULATION-DOPED AL_XGA_1-XAS/GAAS HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXYDRUMMOND TJ; FISCHER R; MORKOC H et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 5; PP. 430-432; BIBL. 13 REF.Article

SHORT-WAVELENGTH CONTINUOUS 300-K PHOTOPUMPED AL_XGA₁^-XAS-GAAS QUANTUM WELL HETEROSTRUCTURE LASER (LAMBDA >7270 A)MORKOC H; DRUMMOND TJ; CAMRAS MD et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 1; PP. 18-19; BIBL. 5 REF.Article

PAIRE INTEGREE LASER-PHOTORECEPTEURANDREEVA EA; BORODULIN VI; ZVERKOV MV et al.1982; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 7; PP. 1457-1458; BIBL. 4 REF.Article

A NOVEL P⁺NN⁺GAAS/AL_0.30GA_0.70AS/GAAS DOUBLE HETEROJUNCTION DIODE FOR HIGH-TEMPERATURE ELECTRONIC APPLICATIONSZIPPERIAN TE; DAWSON LR; BARNES CE et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 10; PP. 901-904; BIBL. 13 REF.Article