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HIGH-GAIN LOW-NOISE GAALAS-GAAS PHOTOTRANSISTORSSCAVENNEC A; ANKRI D; BESOMBES C et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 394-395; BIBL. 11 REF.Article

DETERMINATION OF MINORITY CARRIER LIFETIME AND EFFECTIVE BACK SURFACE RECOMBINATION VELOCITY IN BSF SILICON SOLAR CELLS FROM TRANSIENT MEASUREMENTSJAIN SC; AGARWAL SK; RAY UC et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 365-367; BIBL. 11 REF.Article

CAPACITANCE/VOLTAGE CHARACTERISTICS OF SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR (SIS) STRUCTURENAGAI K; HAYASHI Y; SEKIGAWA T et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 376-377; BIBL. 2 REF.Article

P-GAAS/P-GA1-XALXAS ISOTYPE HETEROJUNCTIONS IN DOUBLE HETEROSTRUCTURE LASER MATERIALHAKKI BW.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6054-6058; BIBL. 28 REF.Article

(GAAL)AS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS WITH GRADED COMPOSITION IN THE BASEMILLER DL; ASBECK PM; ANDERSON RJ et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 367-368; BIBL. 7 REF.Article

GAIN SUPPRESSION IN GAAS/ALGAAS TJS LASERSKAWANISHI H; PETERSEN PE.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 6; PP. 823-824; BIBL. 8 REF.Article

CHARACTERISTICS AND ANALYSIS OF CHANNELED SUBSTRATE NARROW STRIPE GAAS/GAALAS LASERSCURTIS JP; PLUMB RG; GOODWIN AR et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3444-3449; BIBL. 9 REF.Article

MOVPE GROWTH OF GA1-XALXAS-GAAS QUANTUM WELL HETEROSTRUCTURESFRIJLINK PM; MALUENDA J.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 9; PART. 2; PP. L574-L576; BIBL. 4 REF.Article

AN ANALYTICAL SOLUTION OF THE LATERAL CURRENT SPEADING AND DIFFUSION PROBLEM IN NARROW OXIDE STRIPE (GAAL)AS/GAAS DH LASERSLENGYEL G; MEISSNER P; PATZAK E et al.1982; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 4; PP. 464-471; BIBL. 25 REF.Article

LUMINESCENCE PROPERTIES OF GAAS-GA1-XALXAS DOUBLE HETEROSTRUCTURES AND MULTIQUANTUM-WELL SUPERLATTICES GROWN BY MOLECULAR BEAM EPITAXYPETROFF PM; WEISBUCH C; DINGLE R et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 12; PP. 965-967; BIBL. 14 REF.Article

MAGNETOSTATIC FIELD EFFECT ON THRESHOLD CURRENT IN A GAAS/AL Y GA1-YAS DOUBLE-HETEROSTRUCTURE LASERHSIEH HC; LEE GY.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4414-4417; BIBL. 16 REF.Article

MOBILITY ENHANCEMENT IN INVERTED ALXGA1-XAS/GAAS MODULATION DOPED STRUCTURES AND ITS DEPENDENCE ON DONOR-ELECTRON SEPARATIONMORKOC H; DRUMMOND TJ; THORNE RE et al.1981; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 12; PP. L913-L916; BIBL. 14 REF.Article

HETEROJONCTIONS GA1-XALXAS/GAAS REALISES PAR EPITAXIE LIQUIDE AVEC ENTRAINEMENT CONTROLE DE SOLUTION: CROISSANCE ET CARACTERISATIONBENOIT JACQUES.1979; ; FRA; DA. 1979; DGRST/77 7 1001; 27 P.; 30 CM; BIBL. 11 REF.; ACTION CONCERTEE: COMPOSANTS ET CIRCUITS MICROMINIATURISESReport

IMPURITY PHOTOLUMINESCENCE IN GAAS/GA1-XALXAS MULTIPLE QUANTUM WELLSLAMBERT B; DEVEAUD B; REGRENY A et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 43; NO 6; PP. 443-446; BIBL. 10 REF.Article

NUMERICAL SIMULATION OF GAAS/GAALAS HETEROJUNCTION BIPOLAR TRANSISTORSASBECK PM; MILLER DL; ASATOURIAN R et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 12; PP. 403-406; BIBL. 9 REF.Article

PHOTOLUMINESCENCE D'UNE HETEROJONCTION DOUBLE DONT ON EXCITE L'EMETTEUR A LARGE BANDEGARBUZOV DZ; KHALFIN VB; TULASHVILI EH V et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 2; PP. 242-246; BIBL. 4 REF.Article

RELATION ENTRE LA TENSION PHOTOVOLTAIQUE DU VOLUME ET LE MECANISME DU PASSAGE DU COURANT CONTINU DANS DES HETEROSTRUCTURES REGULIERES DE ALGAASARIPOV KH K; RUMYANTSEV VD; YUFEREV VS et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 6; PP. 1032-1036; BIBL. 9 REF.Article

INFLUENCE OF BIAS CURRENT ON THE MODULATION BEHAVIOUR OF GAAS-GAALAS LEDSHARTH W.1981; AEUE, ARCH. ELEKTRON. UEBERTRAGUNGSTECH.; ISSN 0001-1096; DEU; DA. 1981; VOL. 35; NO 9; PP. 373-376; ABS. GER; BIBL. 9 REF.Article

SIZE FLUCTUATIONS AND HIGH-ENERGY LASER OPERATION OF ALXGA1-XAS-ALAS-GAAS QUANTUM-WELL HETEROSTRUCTURESHOLONYAK N JR; LAIDIG WD; CAMRAS MD et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 11; PP. 6777-6782; BIBL. 24 REF.Article

BACKSIDE-GATED MODULATION-DOPED GAAS-(ALGA)AS HETEROJUNCTION INTERFACESTORMER HL; GOSSARD AC; WIEGMANN W et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 6; PP. 493-495; BIBL. 11 REF.Article

AN ANALYTICAL SOLUTION OF THE LATERAL CURRENT SPREADING AND DIFFUSION PROBLEM IN NARROW OXIDE STRIPE (GAAL)AS/GAAS DH LASERSLENGYEL G; MEISSNER P; PATZAK E et al.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 4; PP. 618-625; BIBL. 25 REF.Article

HIGH-SPEED GAALAS-GAAS HETERO-JUNCTION BIPOLAR TRANSISTORS WITH NEAR-BALLISTIC OPERATIONANKRI D; SCHAFF WJ; SMITH P et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 4; PP. 147-149; BIBL. 6 REF.Article

TUNNELLING THROUGH GAAS-ALXGA1-XAS-GAAS DOUBLE HETEROJUNCTIONSDELAGEBEAUDEUF D; DELESCLUSE P; ETIENNE P et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 2; PP. 85-87; BIBL. 9 REF.Article

ELECTRICAL MEASUREMENTS ON N+-GAAS-UNDOPED GA0.6AL0.4AS-N-GAAS CAPACITORSSOLOMON PM; HICMOTT TW; MORKOC H et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 9; PP. 821-823; BIBL. 12 REF.Article

MODULATION DOPED GAAS-GA1-XALXAS HETEROSTRUCTURES GROWN BY ATMOSPHERIC PRESSURE MOVPEMALUENDA J; FRIJLINK PM.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 3; PART. 2; PP. L127-L129; BIBL. 10 REF.Article

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