THE GROWTH OF A GAAS-GAALAS SUPERLATTICECHANG LL; ESAKI L; HOWARD WE et al.1973; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1973; VOL. 10; NO 1; PP. 11-16; BIBL. 19 REF.Serial Issue

THE VARIATION OF THE SOLID COMPOSITION DURING THE LPE GROWTH OF GA_1-XAL_XASRADO WG; CRAWLEY RL.1972; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1972; VOL. 119; NO 12; PP. 1779-1780; BIBL. 5 REF.Serial Issue

PREPARATION DE DEUX COMPOSES DANS LE SYSTEME CA-GA-AS: CA₅GA₂AS₆ ET CA₄GA₃AS₅VERDIER P; MAUNAYE M; MARCHAND R et al.1975; C.R. ACAD. SCI., C; FR.; DA. 1975; VOL. 281; NO 2; PP. 457-459; ABS. ANGL.; BIBL. 3 REF.Article

ZUM WACHSTUM VON A^IIIB^V-HALBLEITERN AUS NICHTSTOECHIOMETRISCHEN SCHMELZEN (II). DOTIERUNG VON GAAS UND GA_1-XAL_XAS MIT ZINK = CROISSANCE DE SEMICONDUCTEURS A^IIIB^V A PARTIR DE PRODUITS DE FUSION NON STOECHIOMETRIQUES (II). DOPAGE DE GAAS ET GA_1-XAL_XAS PAR LE ZINCJACOBS K; JACOBS B; BUTTER E et al.1972; KRISTALL U. TECH.; DTSCH.; DA. 1972; VOL. 7; NO 11; PP. 1209-1217; ABS. ANGL.; BIBL. 11 REF.Serial Issue

SHORT RANGE ORDER PARAMETERS FOR TERNARY ZINC BLENDE SUBSTITUTIONAL SOLID SOLUTIONSBRUHL HG; SCHMIDT W.1973; KRISTALL U. TECH.; DTSCH.; DA. 1973; VOL. 8; NO 1-3; PP. 127-131; ABS. ALLEM.; BIBL. 11 REF.Serial Issue

PHOTOCONDUCTIVITY EFFECTS IN EXTREMELY HIGH MOBILITY MODULATION-DOPED (AL, GA) AS/GAAS HETEROSTRUCTURESDRUMMOND TJ; KOPP W; FISCHER R et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1238-1240; BIBL. 13 REF.Article

SCHOTTKY BARRIER RESTRICTED GAALAS LASERTEMKIN H; CHIN AK; DUTT BV et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 16; PP. 701-703; BIBL. 11 REF.Article

FACET DEGRADATIONS IN GA_1-XAL_XAS/GA_1-YAL_YAS DOUBLE-HETEROSTRUCTURE LASERSHAYAKAWA T; YAMAMOTO S; SAKURAI T et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6068-6073; BIBL. 17 REF.Article

GAALAS STRIPE LASER WITH STABLE TRANSVERSE MODE STRUCTURELANDREAU J; DELPECH P; CHARIL J et al.sdOPTICAL COMMUNICATION CONFERENCE. EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION. 5/1979/AMSTERDAM; NLD; DA. S.D.; PP. 2.4.1-2.4.4; BIBL. 3 REF.Conference Paper

GAIN BROADENING MECHANISM IN VARIOUS GAALAS LASER STRUCTURESRUEHLE W; BROSSON P.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 11; PP. 5949-5953; BIBL. 16 REF.Article

BANDWIDTH-LIMITED PICOSECOND PULSE GENERATION IN AN ACTIVELY MODE-LOCKED GAALAS DIODE LASERHOLBROOK MB; SLEAT WE; BRADLEY DJ et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 1; PP. 59-61; BIBL. 14 REF.Article

IMPROVEMENTS OF THE ELECTRO-OPTIC PROPERTIES OF (AL, GA) AS LASERS BY MEANS OF REDUCED REFLECTION DIELECTRIC FACET COATINGSNASH FR; PAOLI TL; HARTMAN RL et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 1; PP. 48-54; BIBL. 40 REF.Article

A SIMPLE METHOD OF DETERMINING THE AL CONCENTRATION IN GAALAS LAYERS USED IN DOUBLE HETEROSTRUCTURE LASERSBROSSON P; RIBERO CA.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 9; PP. 887-888; BIBL. 6 REF.Article

GAAS/GAALAS ACTIVE-PASSIVE-INTERFERENCE LASERCHOI HK; WANG S.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 8; PP. 302-303; BIBL. 6 REF.Article

COMMENTS "IMPACT IONIZATION IN GA_1-XAL_XSB: AN ALTERNATIVE INTERPRETATION"HILDEBRAND O.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 3; PP. 442-443; BIBL. 2 REF.Article

PHOTOLUMINESCENCE INVESTIGATION OF RESIDUAL SHALLOW ACCEPTORS IN AL_XGA_1-XAS GROWN BY METALORGANIC VAPOR PHASE EPITAXYMIRCEA ROUSSEL A; BRIERE A; HALLAIS J et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 6; PP. 4351-4356; BIBL. 34 REF.Article

ZN DIFFUSION AND DISORDERING OF AN ALAS-GAAS SUPERLATTICE ALONG ITS LAYERSKIRCHOEFER SW; HOLONYAK N JR; COLEMAN JJ et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 766-768; BIBL. 10 REF.Article

INFLUENCE OF AN UNDOPED (ALGA)AS SPACER ON MOBILITY ENHANCEMENT IN GAAS-(ALGA)AS SUPERLATTICESSTOERMER HL; PINCZUK A; GOSSARD AC et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 9; PP. 691-693; BIBL. 15 REF.Article

MICROWAVE-INDUCED OSCILLATIONS IN CHANNELED SUBSTRATE PLANAR AND V-GROWE GAALAS LASERSRUEHLE W; BROSSON P; RIPPER JE et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 66; NO 2; PP. K87-K91; H.T. 1; BIBL. 15 REF.Article

OPTIMUM DESIGN CONDITIONS FOR ALGAAS WINDOW STRIPE LASERSUENO M.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 10; PP. 2113-2122; BIBL. 24 REF.Article

P-GAAS/P-GA_1-XAL_XAS ISOTYPE HETEROJUNCTIONS IN DOUBLE HETEROSTRUCTURE LASER MATERIALHAKKI BW.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6054-6058; BIBL. 28 REF.Article

THE EFFECT OF SUBSTRATE GROWTH TEMPERATURE ON DEEP LEVELS IN N-AL_XGA_L-XAS GROWN BY MOLECULAR BEAM EPITAXYMCAFEE SR; TSANG WT; LANG DV et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6165-6167; BIBL. 22 REF.Article

ELECTRICAL INTERACTIONS OF A SUPERLINEAR LASER DIODE WITH ITS EXTERNAL CIRCUITPAOLI TL.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 11; PP. 1248-1250; BIBL. 3 REF.Article

IMPROVEMENT OF GAAS-GAALAS DOUBLE-HETEROSTRUCTURE LASER WAFER BY GA₁-_XAL_XAS BUFFER LAYERSHIMA K; MORIMOTO M; IMAI H et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 6; PP. 503-505; BIBL. 13 REF.Article

ETUDE DE DIODES LASER REALISEES PAR IMPLANTATION D'OXYGENE DANS LES DOUBLES HETEROJONCTIONS (ALGA)ASBENOIT JACQUES.1978; ; FRA; DA. 1978; DGRST/76 7 0685; 30 P.; 30 CM; ACTION CONCERTEE: COMPOSANTS ET CIRCUITS MICROMINIATURISESReport