THE N-GAAS/ELECTROLYTE INTERFACE: EVIDENCE FOR SPECIFICITY IN LATTICE ION-ELECTROLYTE INTERACTIONS, DEPENDENCE OF INTERFACIAL POTENTIAL DROPS ON CRYSTAL PLANE ORIENTATION TO THE ELECTROLYTE, AND IMPLICATIONS FOR SOLAR ENERGY CONVERSIONRAJESHWAR K; MRAZ T.1983; JOURNAL OF PHYSICAL CHEMISTRY; ISSN 0022-3654; USA; DA. 1983; VOL. 87; NO 5; PP. 742-744; BIBL. 24 REF.Article

INFLUENCE OF ILLUMINATION ON THE ADMITTANCE OF GAAS AND GAP ELECTRODESWOLF B; LORENZ W.1983; ELECTROCHIMICA ACTA; ISSN 0013-4686; GBR; DA. 1983; VOL. 28; NO 5; PP. 699-702; BIBL. 6 REF.Article

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ELECTROCHEMICAL PHOTOVOLTAIC CELLS BASED ON N-GAAS IN PROPYLENE CARBONATELANGMUIR ME; HOEING P; RAUH RD et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 11; PP. 2357-2363; BIBL. 17 REF.Article

KINETICS OF ANODIC DARK AND PHOTODISSOLUTION OF N-GAAS AND N-GAP ELECTRODESLORENZ W; WOLF B.1983; ELECTROCHIMICA ACTA; ISSN 0013-4686; GBR; DA. 1983; VOL. 28; NO 9; PP. 1255-1259; BIBL. 10 REF.Article

A NEWLY DESIGNED ELECTROCHEMICAL MEDIUM USING CROWN ETHER, AND ITS APPLICATION TO ELECTROCHEMICAL AND PHOTOELECTROCHEMICAL REACTIONSNAKABAYASHI S; FUJISHIMA A; HONDA K et al.1983; JOURNAL OF ELECTROANALYTICAL CHEMISTRY AND INTERFACIAL ELECTROCHEMISTRY; ISSN 0022-0728; CHE; DA. 1983; VOL. 149; NO 1-2; PP. 41-47; BIBL. 12 REF.Article

BEHAVIOR OF ILLUMINATED N-TYPE GALLIUM ARSENIDE AND P-TYPE SILICON ROTATING DISK ELECTRODES IN NON-AQUEOUS SOLUTIONSLIN MS; HUNG N; WRIGHTON MS et al.1983; JOURNAL OF ELECTROANALYTICAL CHEMISTRY AND INTERFACIAL ELECTROCHEMISTRY; ISSN 0022-0728; CHE; DA. 1983; VOL. 149; NO 1-2; PP. 27-39; BIBL. 16 REF.Article

DETERMINATION OF THE KINETICS OF PHOTOELECTROCHEMICAL PROCESSES WITH MINORITY CARRIERS FROM PHOTOCURRENT ONSET POTENTIAL ON SEMICONDUCTOR ELECTRODESHANDSCHUH M; LORENZ W; AEGERTER C et al.1983; J. ELECTROANAL. CHEM. INTERFACIAL ELECTROCHEM.; ISSN 0022-0728; CHE; DA. 1983; VOL. 144; NO 1-2; PP. 99-104; BIBL. 8 REF.Article

ELECTROCHEMICAL PHOTOVOLTAIC CELLS BASED ON N-GAAS AND THE TRIIODIDE/IODIDE REDOX COUPLE IN ACETONITRILELANGMUIR ME; PARKER MA; RAUH RD et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 8; PP. 1705-1710; BIBL. 16 REF.Article

ELECTRON ENERGY LEVELS IN SEMICONDUCTOR ELECTROCHEMISTRYGOMES WP; CARDON F.1982; PROG. SURF. SCI.; ISSN 0079-6816; GBR; DA. 1982; VOL. 12; NO 2; PP. 155-215; BIBL. 133 REF.Article

PHOTOELECTROCHEMISTRY OF THE THALLIC/THALLOUS COUPLE. THE THALLIC ION CATALYZED PHOTO-OXIDATION OF PROPYLENESWITZER JA; MOOREHEAD EL; DALESANDRO DM et al.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 10; PP. 2232-2237; BIBL. 39 REF.Article

REGENERATIVE PHOTOELECTROCHEMICAL CELLS USING POLYMER-COATED N-GAAS PHOTOANODES IN CONTACT WITH AQUEOUS ELECTROLYTESRAJESHWAR K; KANEKO M; YAMADA A et al.1983; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1983; VOL. 130; NO 1; PP. 38-43; BIBL. 24 REF.Article