INFLUENCE OF ILLUMINATION ON THE ADMITTANCE OF GAAS AND GAP ELECTRODESWOLF B; LORENZ W.1983; ELECTROCHIMICA ACTA; ISSN 0013-4686; GBR; DA. 1983; VOL. 28; NO 5; PP. 699-702; BIBL. 6 REF.Article

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KINETICS OF ANODIC DARK AND PHOTODISSOLUTION OF N-GAAS AND N-GAP ELECTRODESLORENZ W; WOLF B.1983; ELECTROCHIMICA ACTA; ISSN 0013-4686; GBR; DA. 1983; VOL. 28; NO 9; PP. 1255-1259; BIBL. 10 REF.Article

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