MEASUREMENT OF RADIATIVE RECOMBINATION COEFFICIENT AND CARRIER LEAKAGE IN 1.3 MU M INGAASP LASERS WITH LIGHTLY DOPED ACTIVE LAYERSSU CB; SCHLAFER J; MANNING J et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1108-1110; BIBL. 13 REF.Article

SHUNT CURRENT AND EXCESS TEMPERATURE SENSITIVITY OF I_TH AND ETA _EX IN 1.3 MU M IN GAASP DH LASERSNAMIZAKI H; HIRANO R; HIGUCHI H et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 16; PP. 703-705; BIBL. 6 REF.Article

ANOMALOUS EFFECT OF CARRIERS ON DIELECTRIC CONSTANT OF (IN, GA) (AS, P) LASERS OPERATING AT 1.3 MU M WAVELENGTHTURLEY SEH.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 14; PP. 590-592; BIBL. 6 REF.Article

AUGER RECOMBINATION RATE IN INGAASP LASERSBURT MG.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 19; PP. 806-807; BIBL. 12 REF.Article

GROOVE GAINASP LASER ON SEMI-INSULATING INPYU KL; KOREN U; CHEN TR et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 21; PP. 790-792; BIBL. 7 REF.Article

INGAASP/INP BH LASERS ON P-TYPE INP SUBSTRATESNAKANO Y; TAKAHEI K; NOGUCHI Y et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 18; PP. 645-646; BIBL. 9 REF.Article

HIGH QUANTUM EFFICIENCY INGAASP/INP LASERSTAMARI N; ORON M; MILLER BI et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1025-1027; BIBL. 13 REF.Article

INTERNAL LASS OF INGAASP/INP BURIED CRESCENT (LAMBDA =1.3MU M) LASERHIGUCHI H; NAMIZAK; OOMURA E et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 4; PP. 320-321; BIBL. 10 REF.Article

INTEGRATED ARRAYS OF 1.3-MU M BURIED-CRESCENT LASERSTEMKIN H; LOGAN RA; VAN DER ZIEL JP et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 11; PP. 934-936; BIBL. 10 REF.Article

GAIN SPECTRA OF QUATERNARY SEMICONDUCTORSOSINSKI M; ADAMS MJ.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 6; PP. 229-236; BIBL. 56 REF.Article

HIGH-EFFICIENCY SHORT-CAVITY INGAASP LASER WITH ONE HIGH-REFLECTIVITY MIRRORLEE TP; BURRUS CA; LIU PL et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 19; PP. 805-806; BIBL. 3 REF.Article

VARIATION THERMIQUE DU SEUIL DE GENERATION DES HETEROSTRUCTURES DOUBLES INGAASP-GAAS (LAMBDA GEN=729 NM, T >OU= 300 K, J_SEUIL >OU= 5 X 10³ A/CM²)AREENT'EV IN; VAVILOVA LS; GARBUZOV DZ et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 5; PP. 843-846; BIBL. 15 REF.Article

LEO BANDWIDTH IMPROVEMENT BY BIPOLAR PULSINGDAWSON RW.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 7; PP. 697-699; BIBL. 5 REF.Article

HYBRID LPE/MBE-GROWN INGAASP/INP DFB LASERSASAHI H; KAWAMURA Y; NOGUCHI Y et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 14; PP. 507-509; BIBL. 7 REF.Article

ELECTRICAL DERIVATIVE CHARACTERISTICS OF INGAASP BURIED HETEROSTRUCTURE LASERSWRIGHT PD; JOYCE WB; CRAFT DC et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1364-1372; BIBL. 21 REF.Article

FACET DEGRADATION AND PASSIVATION OF INGAASP/INP LASERSFUKUDA M; TAKAHEI K; IWANE G et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 18-21; BIBL. 10 REF.Article

GROWTH OF INGAASP BY MOLECULAR BEAM EPITAXYHOLAH GD; EISELE FL; MEEKS EL et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1073-1075; BIBL. 13 REF.Article

MECHANISM OF ASYMMETRIC LONGITUDINAL MODE COMPETITION IN INGAASP/INP LASERSISHIKAWA H; YANO M; TAKUSAGAWA M et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 553-555; BIBL. 22 REF.Article

NEW CHEMICAL ETCHING SOLUTION FOR INP AND GALNASP GRATINGSSAITOH T; MIKAMI O; NAKAGOME H et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 10; PP. 408-409; BIBL. 7 REF.Article

OPTICAL GAIN MEASUREMENTS OF 1.3 MU M IN_1-XGA_XAS_YP_1-Y AS FUNCTION OF INJECTED CURRENT DENSITYPRINCE FC; MATTOS TJS; PATEL NB et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 24; PP. 1054-1055; BIBL. 12 REF.Article

V-GROOVED-SUBSTRATE BURIED HETEROSTRUCTURE INGAASP/INP LASER DIODESIMAI H; ISHIKAWA H; HORI K et al.1982; FUJITSU SCIENTIFIC AND TECHNICAL JOURNAL; ISSN 0016-2523; JPN; DA. 1982; VOL. 18; NO 4; PP. 541-561; BIBL. 2 P.Article

1.5 MU M RANGE INGA ASP/INP DISTRIBUTED FEEDBACK LASERSSAKAI K; UTAKA K; AKIBA S et al.1982; IEEE JOURNAL OF QUANTUM ELECTRONICS; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 8; PP. 1272-1278; BIBL. 36 REF.Article

CURRENT DEPENDENCE OF TEMPERATURE RISE IN CW OPERATED GAINASP/INP DH LASER DIODESBROSSON P; THOMPSON GHB.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 25-26; PP. 957-958; BIBL. 6 REF.Article

LOW THRESHOLD CURRENT DENSITY INGAASP/INP LASERS GROWN IN A VERTICAL LIQUID PHASE EPITAXIAL SYSTEMTAMARI N; BALLMAN AA.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 185-187; BIBL. 12 REF.Article

RECENT ADVANCES IN THE PERFORMANCE AND RELIABILITY OF INGAASP LED'S FOR LIGHTWAVE COMMUNICATION SYSTEMSSAUL RH.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 4; PP. 285-295; BIBL. 86 REF.Article