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DISTRIBUTION ENERGETIQUE DES PHOTOELECTRONS DES COUCHES EPITAXIALES GA0,82)IN0,18)ASKAPITSA ML; NEMCHENOK RL; KUDINOV YU A et al.1983; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1983; VOL. 53; NO 2; PP. 415-416; BIBL. 2 REF.Article

EPITAXIAL GROWTH OF INXGA1-XAS WAVEGUIDE DETECTORS FOR INTEGRATED OPTICS.WOLFE CM; STILLMAN GE; MELNGAILIS I et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 11; PP. 1506-1509; BIBL. 16 REF.Article

PLANAR INP/INGAAS-ADP WITH A GUARDRING FORMED BY CD DIFFUSION THROUGH SIO2IKEDA M; WAKITA K; HATA S et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 2; PP. 61-62; BIBL. 7 REF.Article

PROTON AND DEUTERON BOMBARDED GA0.47IN0.53ASSTEEPLES K; DEARNALEY G; HARWELL AERE et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 703-705; BIBL. 7 REF.Article

CROISSANCE ET ETUDE DE COUCHES EPITAXIALES. APPLICATION AUX COMPOSES (GA,IN)AS.HUMBERT A.1974; ; S.L.; DA. 1974; PP. 1-53; H.T. 45; BIBL. 2 P. 1/2; (THESE DOCT. 3E. CYCLE, SPEC. SCI. MATER.; PARIS VI)Thesis

AN N-IN053GA047AS/N-INP RECTIFIERFORREST SR; KIM OK.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 9; PP. 5838-5842; BIBL. 13 REF.Article

TRANSFERRED-ELECTRON OSCILLATION IN N-IN0.53 GA0.47 ASTAKEDA Y; SHIKAGAWA N; SASAKI A et al.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 9; PP. 1003-1005; BIBL. 12 REF.Article

SELECTIVELY-DOPED AL0.48IN0.52AS/GA0.47IN0.53AS HETEROSTRUCTURE FIELD EFFECT TRANSISTORPEARSALL TP; HENDEL R; O'CONNOR P et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 1; PP. 5-8; BIBL. 14 REF.Article

SUBMILLIMETER WAVE PHOTOCONDUCTIVITY OBSERVATION OF SHALLOW DONORS IN IN0,53)GA0.47ASAFSAR MN; BUTTON KJ; GROVES SH et al.1983; INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES; ISSN 0195-9271; USA; DA. 1983; VOL. 4; NO 1; PP. 127-134; BIBL. 16 REF.Article

LOW-TEMPERATURE INVESTIGATIONS OF THE QUANTUM HALL EFFECT IN INXGA1-XAS-INP HETEROJUNCTIONSBRIGGS A; GULDNER Y; VIEREN JP et al.1983; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1983; VOL. 27; NO 10; PP. 6549-6552; BIBL. 13 REF.Article

ELECTRON CONCENTRATION DEPENDENCE OF HALL FACTOR IN IN0.53GA0.47ASTAKEDA Y; LITTLEJOHN MA.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 3; PP. 251-253; BIBL. 23 REF.Article

RAMAN SPECTRA FROM GA1-XINXAS EPITAXIAL LAYERS GROWN ON GAAS AND INP SUBSTRATESKAKIMOTO K; KATODA T.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 9; PP. 826-828; BIBL. 12 REF.Article

A LONG-WAVE LENGTH, ANNULAR IN0,53)GA0,47)AS P-I-N PHOTODETECTIONFORREST SR; KOHL PA; PANOCK R et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 12; PP. 415-417; BIBL. 8 REF.Article

NEAR-BAND-GAP ABSORPTION AND PHOTOLUMINESCENCE OF IN0.53GA0.47AS SEMICONDUCTOR ALLOYYU SSU CHEN; KIM OK.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 12; PP. 7392-7396; BIBL. 11 REF.Article

LPE GROWTH OF MISFIT DISLOCATION-FREE THICK IN1-XGAXAS LAYERS ON INPNAKAJIMA K; KOMIYA S; AKITA K et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 7; PP. 1568-1572; BIBL. 22 REF.Article

TEMPERATURE DEPENDENCE OF HIGH-FREQUENCY ELECTRON MOBILITY IN GA0.47IN0.53ASCHATTOPADHYAY D.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 3; PP. 1850-1851; BIBL. 9 REF.Article

NEW CURRENT INJECTION 1.5 MU M WAVELENGTH GAXALYIN1-X-YAS/INP DOUBLE-HETEROSTRUCTURE LASER GROWN BY MOLECULAR BEAM EPITAXYTSANG WT; OLSSON NA.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 11; PP. 922-924; BIBL. 8 REF.Article

INVERSION-MODE INSULATED GATE GA0.47 IN0.53 AS FIELD-EFFECT TRANSISTORSWIEDER HH; CLAWSON AR; ELDER DI et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 3; PP. 73-74; BIBL. 9 REF.Article

HOT-CARRIER RELAXATION IN PHOTOEXCITED IN0.53GA0.47ASJAGDEEP SHAH; LEHENY RF; NAHORY RE et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 5; PP. 475-477; BIBL. 9 REF.Article

MODELISATION DE TRANSISTORS A EFFET DE CHAMP A GRILLE ULTRA-COURTECARNEZ B; CAPPY A; SALMER G et al.1980; ACTA ELECTRON; ISSN 0001-558X; FRA; DA. 1980; VOL. 23; NO 2; PP. 165-183; ABS. GER/ENG; BIBL. 29 REF.Article

AN IN0 . 43GA0 . 47 AS FUNCTION FIELD-EFFECT TRANSISTORLEHENY RF; NAHORY RE; POLLACK MA et al.1980; IEEE ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 6; PP. 110-111; BIBL. 10 REF.Article

GROWTH AND CHARACTERIZATION OF LIQUID-PHASE EPITAXIAL INXGA1-XAS.NAHORY RE; POLLACK MA; DEWINTER JC et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 2; PP. 775-782; BIBL. 24 REF.Article

ORIENTED GROWTH OF WHISKERS OF AIIIBV COMPOUNDS BY VLS-MECHANISM.GIVARGIZOV EI.1975; KRISTALL U. TECH.; DTSCH.; DA. 1975; VOL. 10; NO 5; PP. 473-484; ABS. RUSSE; BIBL. 19 REF.Article

A NEW GRADING LAYER FOR LIQUID EPITAXIAL GROWTH OF GAXIN1-XAS ON GAAS SUBSTRATE.NAGAI H; NOGUCHI Y.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 3; PP. 108-110; BIBL. 8 REF.Article

TWO-DIMENSIONAL MAGNETOPHONON RESONANCE. II: GAINAS-ALINAS HETEROJUNCTIONSBRUMMELL MA; NICHOLAS RJ; PORTAL JC et al.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 17; PP. L579-L584; BIBL. 11 REF.Article

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