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A THEORETICAL STUDY OF RAMAN SCATTERING AND INFRARED ABSORPTION SPECTRA OF GA_1-XIN_XP MIXED CRYSTALSKLEINERT P; JAHNE E.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 107; NO 1; PP. 177-183; ABS. GER; BIBL. 19 REF.Article

Pressure and temperature tuning of red laser diodes towards yellow and greenBOHDAN, Roland; YVONYAK, Yurij; MROZOWICZ, Milan et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 8, pp 1841-1844, issn 1862-6300, 4 p.Article

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Transverse-mode-stabilized ridge stripe AlGaInP semiconductor lasers incorporating a thin GaAs etch-stop layerTANAKA, T; MINAGAWA, S; KAJIMURA, T et al.Applied physics letters. 1989, Vol 54, Num 15, pp 1391-1393, issn 0003-6951Article

High power and high-temperature operation of GalnP/AlGalnP strained multiple quantum well lasersMANNOH, M; HOSHINA, J; KAMIYAMA, S et al.Applied physics letters. 1993, Vol 62, Num 11, pp 1173-1175, issn 0003-6951Article

Room temperature operation of ultrashort wavelength (619 nm) AlGaInP/GaInP tensile strained quantum well lasersSUMMERS, H. D; BLOOD, P.Electronics Letters. 1993, Vol 29, Num 11, pp 1007-1008, issn 0013-5194Article

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Investigation of the TE and TM polarised laser emission in GaInP/AlGaInp lasers by growth-controlled strainBOERMANS, M. J. B; HAGEN, S. H; VALSTER, A et al.Electronics Letters. 1990, Vol 26, Num 18, pp 1438-1439, issn 0013-5194Article

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Superluminescent diodes for visible (670 nm) spectral range based on AlGaInP/GaInP heterostructures with tapered grounded absorberSEMENOV, A. T; SHIDLOVSKI, V. R; SAFIN, S. A et al.Electronics Letters. 1993, Vol 29, Num 6, pp 530-532, issn 0013-5194Article

Low threshold, 633 nm, single tensile-strained quantum well Ga_0.6In_0.4P/(Al_xGa_1-x)_0.5P laserBOUR, D. P; TREAT, D. W; THORNTON, R. L et al.Applied physics letters. 1992, Vol 60, Num 16, pp 1927-1929, issn 0003-6951Article

Temperature dependence of the threshold current for InGaAlP visible laser diodesISHIKAWA, M; SHIOZAWA, H; ITAYA, K et al.IEEE journal of quantum electronics. 1991, Vol 27, Num 1, pp 23-29, issn 0018-9197, 7 p.Article

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MOVPE of AlGaInP/GaInPO heterostructures for visible lasersROENTGEN, P; HEUBERGER, W; BONA, G. L et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 724-730, issn 0022-0248Conference Paper

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FEASIBILITY OF THE LPE GROWTH OF AL_DXGA_DYIN_D1_D-_DX_D-_DYP ON GAAS SUBSTRATESKAZUMURA M; OHTA I; TERAMOTO I et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 4; PP. 654-657; BIBL. 15 REF.Article

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EFFECT OF LATTICE MISMATCH ON THE SOLIDUS COMPOSITIONS OF GA_XIN_1-XP LIQUID PHASE EPITAXIAL CRYSTALSOHTA J; ISHIKAWA M; ITO R et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 3; PART. 2; PP. L136-L138; BIBL. 13 REF.Article