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Results 1 to 25 of 1856

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MEASUREMENT OF RADIATIVE RECOMBINATION COEFFICIENT AND CARRIER LEAKAGE IN 1.3 MU M INGAASP LASERS WITH LIGHTLY DOPED ACTIVE LAYERSSU CB; SCHLAFER J; MANNING J et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1108-1110; BIBL. 13 REF.Article

INTRACAVITY LOSS MODULATION OF GAINASP DIODE LASERSTSANG DZ; WALPOLE JN; GROVES SH et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 3; PP. 120-122; BIBL. 10 REF.Article

BAND-TO-BAND AUGER EFFECT ON THE OUTPUT POWER SATURATION IN INGAASP LED'SSUGIMURA A.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 4; PP. 441-444; BIBL. 15 REF.Article

LASING CHARACTERISTICS OF GAINASP/INP NARROW PLANAR STRIPE LASERSOE K; ANDO S; SUGIYAMA K et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 7; PP. 3541-3544; BIBL. 11 REF.Article

BAND-TO-BAND AUGER RECOMBINATION IN INGAASP LASERSSUGIMURA A.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 1; PP. 21-23; BIBL. 30 REF.Article

GAIN-CURRENT RELATION FOR IN0.72GA0.28AS0.6P0.4 LASERSDUTTA NK.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 1; PP. 55-60; BIBL. 39 REF.Article

INGAASP LASER DIODESOLSEN GH.1981; OPT. ENG.; ISSN 0091-3286; USA; DA. 1981; VOL. 20; NO 3; PP. 440-445; BIBL. 34 REF.Article

HIGH QUANTUM EFFICIENCY INGAASP/INP LASERSTAMARI N; ORON M; MILLER BI et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1025-1027; BIBL. 13 REF.Article

INTERNAL LASS OF INGAASP/INP BURIED CRESCENT (LAMBDA =1.3MU M) LASERHIGUCHI H; NAMIZAK; OOMURA E et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 4; PP. 320-321; BIBL. 10 REF.Article

CARRIER-PHONON INTERACTION IN 1.3- M QUATERNARY IN0.72GA0.28AS0.6P0.4SHAH J; ETIENNE B; LEHENY RF et al.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 12; PP. 9224-9226; BIBL. 6 REF.Article

PHOTOLUMINESCENCE INTENSITY IN INGAASP/INP DOUBLE-HETEROSTRUCTURESYAMAGUCHI A; KOMIYA S; UMEBU I et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 5; PART. 2; PP. 297-299; BIBL. 8 REF.Article

SHUNT CURRENT AND EXCESS TEMPERATURE SENSITIVITY OF ITH AND ETA EX IN 1.3 MU M IN GAASP DH LASERSNAMIZAKI H; HIRANO R; HIGUCHI H et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 16; PP. 703-705; BIBL. 6 REF.Article

ANOMALOUS EFFECT OF CARRIERS ON DIELECTRIC CONSTANT OF (IN, GA) (AS, P) LASERS OPERATING AT 1.3 MU M WAVELENGTHTURLEY SEH.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 14; PP. 590-592; BIBL. 6 REF.Article

AUGER RECOMBINATION RATE IN INGAASP LASERSBURT MG.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 19; PP. 806-807; BIBL. 12 REF.Article

GROOVE GAINASP LASER ON SEMI-INSULATING INPYU KL; KOREN U; CHEN TR et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 21; PP. 790-792; BIBL. 7 REF.Article

INGAASP/INP BH LASERS ON P-TYPE INP SUBSTRATESNAKANO Y; TAKAHEI K; NOGUCHI Y et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 18; PP. 645-646; BIBL. 9 REF.Article

INFLUENCE OF PRESSURE ON TEMPERATURE SENSITIVITY GAXIN1-XASYP1-Y LASERSADAMS AR; PATEL D; GREENE PD et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 21; PP. 919-920; BIBL. 5 REF.Article

INTERBAND AUGER RECOMBINATION IN INGAASPCHIU LC; CHEN PC; YARIV A et al.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 6; PP. 938-941; BIBL. 20 REF.Article

EVIDENCE FOR AUGER AND FREE-CARRIER LOSSES IN GAINASP/INP LASERS: SPECTROSCOPY OF A SHORT WAVELENGTH EMISSIONMOZAER A; ROMANEK KM; SCHMID W et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 10; PP. 964-966; BIBL. 37 REF.Article

DECAPAGE IONIQUE DES HETEROJONCTIONS INP-INGAASPZARGAR'YANTS MN; KRAPUKHIN VV; KRYKANOV IA et al.1982; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 10; PP. 2102-2104; BIBL. 9 REF.Article

A GROOVE GAINASP LASER ON SEMI-INSULATING INP USING A LATERALLY DIFFUSED JUNCTIONYU KL; KOREN U; CHEN TR et al.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 5; PP. 817-819; BIBL. 6 REF.Article

CHARACTERISTICS OF NARROW STRIPE GEOMETRY INGAASP/INP LASER DIODEOOMURA E; MUROTANI T; ISHII M et al.1981; TRANS. INST. ELECTRON. COMMUN. ENG. JPN., SECT. E; ISSN 0387-236X; JPN; DA. 1981; VOL. 64; NO 1; PP. 7-12; BIBL. 25 REF.Article

BURIED HETEROSTRUCTURE LASERS IN THE GAINASP SYSTEM: DESIGNBUUS J.1981; APPL. OPT.; ISSN 0003-6935; USA; DA. 1981; VOL. 20; NO 10; PP. 1884-1885; BIBL. 4 REF.Article

GAINASP/INP STRIPE LASERS WITH ETCHED MIRRORS FABRICATED BY A WET CHEMICAL ETCHMILLER BI; IGA K.1980; APPL. PHYS. LETTERS; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 4; PP. 339-341; BIBL. 12 REF.Article

INTEGRATED ARRAYS OF 1.3-MU M BURIED-CRESCENT LASERSTEMKIN H; LOGAN RA; VAN DER ZIEL JP et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 11; PP. 934-936; BIBL. 10 REF.Article

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