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kw.\*:("GALLIUM PHOSPHIDE")

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CHROMIUM-INDUCED UP CONVERSION IN GAPCLERJAUD B; GENDRON F; PORTE C et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 4; PP. 212-214; BIBL. 13 REF.Article

INVERSION DU TYPE DE CONDUCTIVITE DANS DES COUCHES EPITAXIALES DE GAP OBTENUES A PARTIR DE LA PHASE LIQUIDEFEDOROV VA; NEVSKIJ OB; ZHUCHKOV AI et al.1980; DOKL. AKAD. NAUK SSSR; ISSN 0002-3264; SUN; DA. 1980; VOL. 253; NO 2; PP. 428-430; BIBL. 6 REF.Article

LIGHT GENERATION IN DIFFUSED GAP LIGHT EMITTING DIODES (LEDS)THOMAS BW; REES GJ; WIGHT DR et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 6; PP. 611-619; BIBL. 21 REF.Article

ECLAIR THERMOSTIMULE DE LA LUMINESCENCE DANS GAPNECHAEV VM; POLTORATSKIJ EH A; SURIS RA et al.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 9; PP. 1699-1703; BIBL. 3 REF.Article

RECOMBINAISON RADIATIVE DANS GAP DE TYPE N OBTENU PAR CRISTALLISATION PAR LA METHODE DE CZOCHRALSKINECHAEV VM; POLTORATSKIJ EH A; SURIS RA et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 6; PP. 1103-1109; BIBL. 12 REF.Article

EFFET D'UN BOMBARDEMENT ELECTRONIQUE SUR LE RENDEMENT QUANTIQUE EXTERNE DES DIODES LUMINESCENTES GAP:ZN, OANTOSHIN AA; KORSHUNOV FP; SAMONOV SM et al.1980; ZH. PRIKL. SPEKTROSK.; BYS; DA. 1980; VOL. 33; NO 2; PP. 345-350; ABS. ENG; BIBL. 14 REF.Article

PHOTOEFFET ANORMAL SUR LES EXCITONS LIES DANS LE PHOSPHURE DE GALLIUMPIKHTIN AN; POPOV VA.1980; PIS'MA ZH. EKSPER. TEOR. FIZ.; SUN; DA. 1980; VOL. 31; NO 12; PP. 723-726; BIBL. 6 REF.Article

Simulation assisted design of a gallium phosphide n-p photovoltaic junctionALLEN, Charles R; JEON, Jong-Hyeok; WOODALL, Jerry M et al.Solar energy materials and solar cells. 2010, Vol 94, Num 5, pp 865-868, issn 0927-0248, 4 p.Article

INFLUENCE D'UN TRAITEMENT THERMIQUE SUR LA DISTRIBUTION DE DIFFUSION DE L'ARGENT ET DE L'OR DANS LE PHOSPHORE DE GALLIUMKHUDYAKOV SV.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 1; PP. 8-11; BIBL. 8 REF.Article

MULTI-MODE MATRIX (MMM) FLAT-PANEL LED VECTORGRAPHIC CONCEPT DEMONSTRATOR DISPLAYBURNETTE KT; MELNICK W.1980; PROC. SOC. INF. DISP.; USA; DA. 1980; VOL. 21; NO 2; PP. 113-125; BIBL. 8 REF.Article

MULTI-MODE MATRIX (MMM) MODULAR FLIGHT DISPLAY DEVELOPMENTBURNETTE KT; MOFFAT AJ; WAREBERG PG et al.1980; PROC. SOC. INF. DISP.; USA; DA. 1980; VOL. 21; NO 2; PP. 143-155; BIBL. 14 REF.Article

PLASTIC DEFORMATION AND FRACTURE RESULTING FROM STRESSES CAUSED BY DIFFERENTIAL THERMAL CONTRACTION IN GAP/SI HETEROSTRUCTURESTSUI RK; GERSHENZON M.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 2; PP. 218-220; BIBL. 12 REF.Article

GREEN CATHODOLUMINESCENCE FROM DEFECTS IN GAP POLYCRYSTALS IN THE SCANNING ELECTRON MICROSCOPELLOPIS J; PIQUERAS J.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 59; NO 1; PP. K21-K24; H.T. 2; BIBL. 9 REF.Article

DIRECT OBSERVATION OF DISLOCATIONS IN GAP CRYSTALSHILGARTH J.1978; J. MATER. SCI.; GBR; DA. 1978; VOL. 13; NO 12; PP. 2697-2702; BIBL. 8 REF.Article

NICKEL AND IRON: MULTIVALENCE IMPURITIES IN GAPENNEN H; KAUFMANN U.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 3; PP. 1615-1618; BIBL. 21 REF.Article

CONTRIBUTION A L'ETUDE DES COMPLEXES EXCITONS IMPURETES DANS GAP ET GAASP: MESURE DES POTENTIELS DE DEFORMATIONSAMEZIANE ELHASSANI LAHCEN.1979; ; FRA; DA. 1979; 170 P.; 30 CM; BIBL. 10 P.; TH.: SCI./MONTPELLIER 2/1979Thesis

LE SOLIDUS DU SYSTEME QUASI BINAIRE GAP-SB DANS LE DOMAINE DE CRISTALLISATION PRIMAIRE DE GAPKUZNETSOV VV; SOROKIN VS.1978; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; SUN; DA. 1978; VOL. 14; NO 7; PP. 1212-1216; BIBL. 18 REF.Article

BREVET 2.300.741 (A1) (7603961). - 13 FEVRIER 1976. PROCEDE DE PREPARATION D'ARSENIURES OU DE PHOSPHURES D'ELEMENTS DU GROUPE IIIB DE LA CLASSIFICATION PERIODIQUE.sdPatent

HIGH-EFFICIENCY GAP GREEN LED'S WITH DOUBLE N-LPE LAYERSIWAMOTO M; TASHIRO M; BEPPU T et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 11; PP. 2157-2163; BIBL. 18 REF.Article

ETUDE DE LA PRESSION DE VAPEUR SATUREE DU PHOSPHORE AU-DESSUS DES SOLUTIONS SOLIDES INP-GAPBATYREV NI; KRESTOVNIKOV AN; UFIMTSEV VB et al.1977; ZH. FIZ. KHIM.; S.S.S.R.; DA. 1977; VOL. 51; NO 5; PP. 1052-1055; BIBL. 11 REF.Article

PRESSION DES VAPEURS P ET AS SUR LES SOLUTIONS DE GAP ET GAAS DANS SNKHUKHRYANSKIJ YU P; KONDAUROV VP; NIKOLAEVA EP et al.1976; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1976; VOL. 12; NO 6; PP. 1111-1112; BIBL. 7 REF.Article

A SAMPLE HOLDER FOR MEASURING THE INTERFACIAL ANGLES OF SMALL CRYSTALS USING A SCANNING ELECTRON MICROSCOPE.SCHOENHERR E; WINCKLER E.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 36; NO 2; PP. 353-354; BIBL. 1 REF.Article

THE STUDY OF PHOTOLUMINESCENCE SPECTRA DEPTH PROFILES OF EPITAXIAL LAYERS GAP: ZN, OZYBORNY Z; PASTRNAK J.1981; CZECH. J. PHYS.; ISSN 0011-4626; CSK; DA. 1981; VOL. 31; NO 4; PP. 433-440; BIBL. 19 REF.Article

ANALYSE DES EQUILIBRES DE PHASE DANS LE SYSTEME DES SOLUTIONS SOLIDES PHOSPHURE DE GALLIUM-ARSENIURE D'INDIUMIL'IN YU L; OVCHINNIKOV S YU; YAS'KOV DA et al.1979; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1979; VOL. 53; NO 9; PP. 2352-2354; BIBL. 5 REF.Article

EMISSION DISTRIBUTIONS FROM NEA COLD CATHODESHATANAKA Y; SUKEGAWA T; ANDO T et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 5; PP. 871-876; BIBL. 15 REF.Article

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