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MODULATEURS DE LUMIERE PHOTOELASTIQUES A BASE DE CRISTAUX D'ARSENIURE DE GALLIUM ET DE PHOSPHURE DE GALLIUMGEJDUR SA; KRYLOV KI; PROKOPENKO VT et al.1982; OPT. SPEKTROSK.; ISSN 0030-4034; SUN; DA. 1982; VOL. 52; NO 4; PP. 729-732; BIBL. 9 REF.Article

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GAAS AND GAP AMORPHOUS-FILM/CRYSTAL JUNCTIONSKUMABE K; MATSUMOTO N.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; SUPPL. 2; PP. 119-122; BIBL. 3 REF.Conference Paper

AUGER RECOMBINATION CROSS SECTION ASSOCIATED WITH DEEP TRAPS IN SEMICONDUCTORSRIDDOCH FA; JAROS M.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 33; PP. 6181-6188; BIBL. 19 REF.Article

Optical absorption spectra of magnesium-implanted GaPHÖRIG, W; BOUAMAMA, K; NEUMANN, H et al.Crystal research and technology (1979). 1990, Vol 25, Num 6, pp 677-681, issn 0232-1300Article

Comparison of trapping levels in GaAsP strained-layer superlattice structures and in their buffer layersBARNES, C. E; BIEFELD, R. M; ZIPPERIAN, T. E et al.Applied physics letters. 1984, Vol 45, Num 4, pp 408-410, issn 0003-6951Article

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