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DIFFERENCE OF THERMAL EXPANSION COEFFICIENTS IN GA1-XALXP-GAP HETEROSTRUCTURESBESSOLOV VN; KONNIKOV SG; UMANSKIJ VE et al.1983; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1983; VOL. 53; NO 2; PP. 411-412; BIBL. 9 REF.Article

BRUITS DE LUMINESCENCE DANS DES DIODES LUMINESCENTES AU GAL A 2 BANDESPOTEMKIN VV; MAMONTOV YU M.1982; IZV. VYSS. NCEBN. ZAVED., RADIOFIZ.; ISSN 0021-3462; SUN; DA. 1982; VOL. 25; NO 4; PP. 461-465; ABS. ENG; BIBL. 5 REF.Article

ANOMALOUS VARIATIONS IN DARK PULSE RATE IN GAP FIRST DYNODE PMTS AT CONSTANT TEMPERATUREYAMASHITA M.1981; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1981; VOL. 52; NO 12; PP. 1920-1923; BIBL. 4 REF.Article

IMPURITY PROFILE ON GAP DIODES IN THE NEIGHBOURHOOD OF A P-N JUNCTIONOELGART G; ARNOLD G.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 65; NO 2; PP. 609-618; ABS. GER; BIBL. 19 REF.Article

KOSSEL LINE PROFILES NEAR DISLOCATIONS IN GAPERBEN N; PAUFLER P; LOESCHKE K et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 65; NO 2; PP. K175-K178; BIBL. 11 REF.Article

NEED FOR A NEW METASTABLE STATE OF GAP:O- IN THE DEAN-HENRY-KUKIMOTO MODEL OF GAP:OBARAFF GA; KANE EO; SCHLUTER M et al.1981; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1981; VOL. 47; NO 8; PP. 601-604; BIBL. 13 REF.Article

ON THE ESTIMATION OF CAPTURE CROSS SECTION FROM A TSC TRACE FOR GAP (CU)BALARIN M.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 39; NO 12; PP. 1277-1279; BIBL. 12 REF.Article

ELECTRON SPIN RESONANCE OF DANGLING BONDS IN HIGHLY DISORDERED LAYERS PRODUCED BY ION IMPLANTATION IN GAPMATSUMORI T; MIYAZAKI K; SHIGETOMI S et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 6; PP. 521-523; BIBL. 4 REF.Article

PERIODICITY IN THE UNDULATION SPECTRA OF GAP:NFEENSTRA RM; MCGILL TC.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 1; PP. 430-431; BIBL. 6 REF.Article

PHOTOCURRENT ONSET POTENTIAL AND FLATBAND POTENTIAL OF A P-TYPE GAP SEMICONDUCTING PHOTOELECTRODEHOROWITZ G.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 5; PP. 409-411; BIBL. 18 REF.Article

THEORETICAL STUDY OF THE ELECTRONIC STRUCTURE OF GAP(110)MANGHI F; BERTONI CM; CALANDRA C et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 10; PP. 6029-6042; BIBL. 42 REF.Article

THICKNESS OF GAP LIQUID PHASE EPITAXIAL LAYERS GROWN BY STEP-COOLING, EQUILIBRIUM-COOLING, AND RAMP-COOLING METHODSKAO YC; EKNOYAN O.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 4; PP. 1865-1867; BIBL. 10 REF.Article

SPECTRES DE PHOTOSENSIBILITE DES STRUCTURES P-N A LARGEUR DE BANDE VARIABLE EN GA1-XALXPABDURAKHMANOV YU YU; BESSOLOV VN; IMENKOV AN et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 1; PP. 125-128; BIBL. 3 REF.Article

PHASE-CONJUGATE REFLECTION THROUGH DEGENERATE FOUR-WAVE MIXING IN GALLIUM PHOSPHIDESIBBETT W; TAYLOR JR.1982; OPTICAL AND QUANTUM ELECTRONICS; ISSN 0306-8919; GBR; DA. 1982; VOL. 14; NO 1; PP. 81-84; BIBL. 13 REF.Article

REACTION KINETICS IN GAP:(ZN,O)FEENSTRA RM; MCGILL TC.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 10; PP. 6329-6337; BIBL. 24 REF.Article

OPTIMALISED CURRENT CONTROL OF ELECTROLUMINESCENT DIODES UNDER MULTIPLEXED EXCITATIONBATAILLER G; BERNARD J; GARCIA P et al.1981; J. LUMIN.; ISSN 0022-2313; NLD; DA. 1981; VOL. 22; NO 4; PP. 359-375; BIBL. 12 REF.Article

ELECTRONIC SPIN OF THE GA VACANCY IN GAPKENNEDY TA; WILSEY ND; KREBS JJ et al.1983; PHYSICAL REVIEW LETTERS; ISSN 0031-9007; USA; DA. 1983; VOL. 50; NO 17; PP. 1281-1284; BIBL. 16 REF.Article

LUMINESCENCE STUDY OF A DEEP LEVEL IN N-FREE GAP LIGHT EMITTING DIODESNISHIZAWA J; SIN CC; SUTO K et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 8; PP. 5876-5881; BIBL. 14 REF.Article

THERMOCHEMICAL MODEL APPLIED TO A DEEP-LEVEL DEFECT IN GAPKRISPIN P.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 69; NO 1; PP. 193-200; ABS. GER; BIBL. 26 REF.Article

IDENTIFICATION AND PROPERTIES OF DEFECTS IN GAPSCHEFFLER M; PANTELIDES ST; LIPARI NO et al.1981; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1981; VOL. 47; NO 6; PP. 413-416; BIBL. 18 REF.Article

INVESTIGATION OF THE BOND CHARGE IN GAP WITH X-RAY DATABRUHL HG; PIETSCH U.1981; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1981; VOL. 68; NO 2; PP. 689-695; ABS. GER; BIBL. 32 REF.Article

ON THE EXPERIMENTAL DETERMINATION OF MANY-PARTICLE EFFECTS AT INTERBAND TRANSITIONSJUNGK G.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 105; NO 2; PP. 551-556; ABS. GER; BIBL. 26 REF.Article

A GALLIUM PHOSPHIDE HIGH-TEMPERATURE BIPOLAR JUNCTION TRANSISTORZIPPERIAN TE; DAWSON LR.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 11; PP. 895-897; BIBL. 9 REF.Article

HIGH BRIGHTNESS GAP GREEN LED'SNIINA T; YAMAGUCHI T; YAMAZAWA T et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 4; PP. 264-267; BIBL. 3 REF.Article

EFFICIENT INFRARED UPCONVERSION IN GAPGUNDERSEN MA; YOCOM TA; SNYDER PG et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1769-1771; BIBL. 12 REF.Article

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