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DIFFERENCE OF THERMAL EXPANSION COEFFICIENTS IN GA1-XALXP-GAP HETEROSTRUCTURESBESSOLOV VN; KONNIKOV SG; UMANSKIJ VE et al.1983; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1983; VOL. 53; NO 2; PP. 411-412; BIBL. 9 REF.Article

NEW ACTIVATION METHODS FOR LONG-LIFE AND HIGHLY STABLE GAP-GAALP HETEROJUNCTION COLD CATHODESKAN H; KATSUNO H; NAKAMURA T et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 6; PP. 3404-3408; BIBL. 16 REF.Article

OPTIMIZATION OF GROWTH CONDITIONS IN THE SYNTHESIS, SOLUTE DIFFUSION GROWTH OF GAP.GILLESSEN K; MARSHALL AJ.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 33; NO 2; PP. 356-360; BIBL. 6 REF.Article

AN ALTERNATIVE METHOD FOR LIQUID PHASE EPITAXY.MEINDERS H.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 26; NO 1; PP. 180-182; BIBL. 7 REF.Article

VAPOR DEPOSITION OF GAP FOR HIGH-EFFICIENCY YELLOW SOLID-STATE LAMPSWESSELS BW.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 3; PP. 402-406; BIBL. 18 REF.Article

DETERMINATION DE LA POLARITE CRISTALLOGRAPHIQUE DES MONOCRISTAUX GAPKOROLEV VE; LITVINOV YU M; MALYUKOV BA et al.1975; IZVEST. SIBIR. OTDEL. AKAD. NAUK S.S.S.R., KHIM. NAUK; S.S.S.R.; DA. 1975; NO 4; PP. 118-121; BIBL. 6 REF.Article

DIFFUSION OF PHOSPHORUS IN GALLIUM MELT.KANEKO KK; AYABE M; DOSEN M et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 4; PP. 556-558; BIBL. 10 REF.Article

ENDOR-UNTERSUCHUNGEN AN GAP:FE3+. = MESURES ENDOR SUR GAP:FE3+TEUERLE W; BLASCHKE E; HAUSMANN A et al.1974; Z. PHYS.; DTSCH.; DA. 1974; VOL. 270; NO 1; PP. 37-41; BIBL. 6 REF.Article

EFFET PHOTO-EMISSIF ET REFLEXION PAR LES FACES POLAIRES (111) ET (111) DU CRISTAL GAP PRES DE L'EXTREMITE K D'ABSORPTION DU GALLIUMTAGIROV IR; SHCHEMELEV VN; ZAKHAROV BG et al.1982; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 4; PP. 815-818; BIBL. 15 REF.Article

CHROMIUM-INDUCED UP CONVERSION IN GAPCLERJAUD B; GENDRON F; PORTE C et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 4; PP. 212-214; BIBL. 13 REF.Article

SELECTIVE ETCHING OF GAP CRYSTALS WITH HOT PHOSPHORIC ACID.URAGAKI T; YAMANAKA H; INOUE M et al.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 4; PP. 580-582; BIBL. 4 REF.Article

EFFETS DU RAYONNEMENT DANS LA REGION VOISINE DE LA LIMITE DU PHOSPHURE DE GALLIUMBORKOVSKAYA O YU; DMITRUK NL; KONAKOVA RV et al.1982; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 6; PP. 1194-1199; BIBL. 21 REF.Article

PREFERENTIAL INTERACTION OF CHANNELLED PARTICLES IN DIATOMIC CRYSTALS.BONTEMPS A; FONTENILLE J; GUIVARC'H A et al.1976; PHYS. LETTERS, A; NETHERL.; DA. 1976; VOL. 55; NO 6; PP. 373-374; BIBL. 7 REF.Article

SUR LA PURIFICATION DU PHOSPHORE SIMULTANEE A LA SYNTHESE ET A LA CULTURE DES CRISTAUX LAMELLAIRE DE PHOSPHURE DE GALLIUMKISELEVA EH N; NIKOLAEV IV; DEM'YANOV EH A et al.1976; ZH. PRIKL. KHIM.,*O S.S.S.R.; DA. 1976; VOL. 49; NO 6; PP. 1199-1201; BIBL. 8 REF.Article

THE MEASUREMENT OF ANOMALOUS SCATTERING FACTORS NEAR THE GAK ABSORPTION EDGE IN GAP.FUKAMACHI T; HOSOYA S.1975; ACTA CRYSTALLOGR., A; DANEM.; DA. 1975; VOL. 31; NO 2; PP. 215-220; BIBL. 17 REF.Article

COMPORTEMENT DU TELLURE DANS GAP DANS LE PROCEDE DE FUSION DE ZONE HORIZONTALESHCHEGOLEVA VF; MARINA LI; NASHEL'SKIJ A YA et al.1974; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1974; VOL. 10; NO 8; PP. 1406-1408; BIBL. 5 REF.Article

BREVET 2.285.341 (A1) (7431524). A 18 SEPTEMBRE 1974. PROCEDE DE SYNTHESE DE PHOSPHURE DE GALLIUMsdPatent

CATHODOLUMINESCENCE DE GA1-XALXP NBESSOLOV VN; DOBRYNINA ES; PETROV VI et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 4; PP. 694-697; BIBL. 8 REF.Article

PHASE EQUILIBRIA IN THE GA-P SYSTEM. CALCULATION OF ACTIVITIES AND VAPOUR PRESSURES USING A SIMPLE ASYMMETRICAL SOLUTION MODELKNOBLOCH G.1975; KRISTALL U. TECH.; DTSCH.; DA. 1975; VOL. 10; NO NO 6; PP. 605-616; ABS. ALLEM.; BIBL. 25 REF.Article

SOLID COMPOSITION AND GALLIUM AND PHOSPHORUS VACANCY CONCENTRATION ISOBARS FOR GAP.JORDAN AS; CARUSO R; VON NEIDA AR et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 8; PP. 3472-3476; BIBL. 23 REF.Article

CINETIQUE DE LA CROISSANCE DES COUCHES EPITAXIQUES DE PHOSPHURE DE GALLIUM DANS LA ZONE DE RECRISTALLISATION A GRADIENT DE TEMPERATURELOZOVSKIJ VN; MAR'EV VB.1974; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1974; VOL. 17; NO 7; PP. 115-118; BIBL. 8 REF.Article

LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF 35 MM DIAMETER SINGLE CRYSTALS OF GAPNYGREN SF.1973; J. CRYST. GROWTH; NETHERL.; DA. 1973; VOL. 19; NO 1; PP. 21-32; BIBL. 16 REF.Serial Issue

ETUDE DE LA SURFACE (111) DE GAP PAR LES METHODES DE SPECTROSCOPIE AUGER ET DE DIFFRACTION D'ELECTRONS LENTSMITYAGIN A YU; ORLOV VP; CHEREVATSKIJ N YA et al.1973; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1973; VOL. 18; NO 2; PP. 423-424; BIBL. 3 REF.Serial Issue

EXCITATION OF SURFACE POLARITONS BY NONDEGENERATE FOUR-WAVE MIXING OF EVANESCENT WAVESHENDOW ST; UJIHARA K.1983; OPTICS COMMUNICATIONS; ISSN 0030-4018; NLD; DA. 1983; VOL. 45; NO 2; PP. 138-142; BIBL. 18 REF.Article

INVERSION DU TYPE DE CONDUCTIVITE DANS DES COUCHES EPITAXIALES DE GAP OBTENUES A PARTIR DE LA PHASE LIQUIDEFEDOROV VA; NEVSKIJ OB; ZHUCHKOV AI et al.1980; DOKL. AKAD. NAUK SSSR; ISSN 0002-3264; SUN; DA. 1980; VOL. 253; NO 2; PP. 428-430; BIBL. 6 REF.Article

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