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Results 1 to 25 of 271

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TELLURURE DE GALLIUM.JULIEN POUZOL M; JAULMES S; ALAPINI F et al.1977; ACTA CRYSTALLOGR., B; DANEM.; DA. 1977; VOL. 33; NO 7; PP. 2270-2272; ABS. ANGL.; BIBL. 5 REF.Article

ON THE PHASE DIAGRAM OF THE GA-TE SYSTEM IN THE COMPOSITION RANGE 55 AT % TEANTONOPOULOS JG; KARAKOSTAS T; BLERIS GL et al.1981; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1981; VOL. 16; NO 3; PP. 733-738; BIBL. 18 REF.Article

CROISSANCE DE MONOCRISTAUX CAS ET GATE PAR LA METHODE DE TRANSPORT DE GAZAZIZOV T KH; ALIEV I YA; ABBASOV AS et al.1975; AZERBAJDZH. KHIM. ZH.; S.S.S.R.; DA. 1975; NO 3; PP. 126-129; ABS. AZERB.; BIBL. 14 REF.Article

CONDUCTIVITE PAR LES ETATS LOCALISES DANS GATE FORTEMENT COMPENSETAGIEV BG; NIFTIEV GM; GASANOV IA et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 10; PP. 2079-2081; BIBL. 9 REF.Article

VIBRATIONAL SPECTRA OF A GATE LAYER CRYSTALGASANLY NM; DZHAVADOV BM; TAGIROV VI et al.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 100; NO 1; PP. K53-K57; BIBL. 9 REF.Article

PHASE DIAGRAM OF THE CU2TE-GA2TE3 SYSTEM AND SEMICONDUCTING PROPERTIES OF CU2 GA4 TE7CONGIU A; GARBATO L; MANCA P et al.1973; MATER. RES. BULL.; U.S.A.; DA. 1973; VOL. 8; NO 3; PP. 293-299; BIBL. 22 REF.Serial Issue

ETUDE DE LA CRISTALLISATION DE COUCHES MINCES DE GA3TE4LISAUSKAS VS; YASUTIS VV; TOLUTIS VB et al.1972; LITOV. FIZ. SBOR.; S.S.S.R.; DA. 1972; VOL. 12; NO 6; PP. 1019-1023; ABS. LITU. ANGL.; BIBL. 4 REF.Serial Issue

ETUDE DES SYSTEMES BITE-IN (GA, SN) TEDOVLETOV K; SAMAKHOTINA NK; ANIKIN AV et al.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 7; PP. 1215-1217; BIBL. 4 REF.Article

INFLUENCE OF INTRINSIC DEFECTS ON THE ELECTRICAL PROPERTIES OF AIBIIIC2VI COMPOUNDSNEUMANN H.1983; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1983; VOL. 18; NO 4; PP. 483-490; ABS. GER; BIBL. 2 P.Article

ZUR DARSTELLUNG UND KRISTALLSTRUKTUR VON CAAL6TE10 UND CAGA6TE10 = PREPARATION ET STRUCTURE CRISTALLINE DE CAAL6TE10 ET CAGA6TE10KLEE W; SCHAEFER H.1979; Z. NATURFORSCH.; DEU; DA. 1979; VOL. 34; NO 5; PP. 657-661; ABS. ENG; BIBL. 6 REF.Article

SYSTEME GALLIUM-TELLURE. DIAGRAMMES DE PHASES, ETUDE STRUCTURALE DE GATE, GA2TE5 ET DE GA5SNTE10ALAPINI F; FLAHAUT J; GUITTARD M et al.1979; J. SOLID STATE CHEM.; GBR; DA. 1979; VOL. 28; NO 3; PP. 309-319; BIBL. 21 REF.Article

SUR LE TELLURURE SUPERIEUR DE GALLIUM GA2TE5ALAPINI F; GUITTARD M; JULIEN POUZOL M et al.1976; C.R. ACAD. SCI., C; FR.; DA. 1976; VOL. 282; NO 12; PP. 543-545; ABS. ANGL.; BIBL. 3 REF.Article

DIAGRAMME D'ETAT DU SYSTEME GETE-GA2TE3ROGACHEVA EI; PANASENKO NM; MELIKHOVA AN et al.1974; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1974; VOL. 10; NO 7; PP. 1226-1229; BIBL. 10 REF.Article

DOPAGE DE GA2TE3 PAR LE FERANISIMOVA OA; GODOVIKOV SK; GUBSKAYA GF et al.1982; IZVESTIJA AKADEMII NAUK SSSR. NEORGANICESKIE MATERIALY; ISSN 0002-337X; SUN; DA. 1982; VOL. 18; NO 4; PP. 573-580; BIBL. 15 REF.Article

SYSTEME GATE3-BI2TE3SHAKHBAZOV MG; SEIDOVA NA; RUSTAMOV PG et al.1978; ZH. NEORG. KHIM.; S.S.S.R.; DA. 1978; VOL. 23; NO 1; PP. 249-251; BIBL. 3 REF.Article

AN ELECTRON MICROSCOPIC EXAMINATION OF MONOCLINIC GATEKARAKOSTAS T; ANTONOPOULOS JG; KOKKOU S et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 59; NO 1; PP. K17-K19; H.T. 1; BIBL. 6 REF.Article

THERMAL DECOMPOSITION OF THE BINARY COMPOUNDS GAS, GASE AND GATEWADSTEN T.1979; THERMOCHIM. ACTA; NLD; DA. 1979; VOL. 29; NO 2; PP. 261-264; BIBL. 7 REF.Article

LE DEGRE DE DISSOCIATION DES TELLURURES DE GA ET IN AU POINT DE FUSION D'APRES LES DONNEES DE LA COURBURE DU LIQUIDUSGLAZOV VM; PAVLOVA LM.1977; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1977; VOL. 13; NO 2; PP. 217-221; BIBL. 7 REF.Article

DIELECTRIC AND PHOTOCONDUCTING PROPERTIES OF GA2TE3 AND IN2TE3 CRYSTALSBOSE DN; DE PURKAYASTHA S.1981; MATER. RES. BULL.; ISSN 0025-5408; USA; DA. 1981; VOL. 16; NO 6; PP. 635-642; BIBL. 11 REF.Article

CONDUCTIVITE ELECTRIQUE ET EFFET HALL DANS LES COUCHES DU COMPOSE CDGA2TE4KUCHIS EV; PAULAVICHYUS AB; YASUTIS VV et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 11; PP. 2132-2135; BIBL. 11 REF.Article

ANISOTYPE MULTIHETEROJUNCTION EUTECTIC COMPOSITES: THE CDTE-GATE SYSTEMVAN HOOF LAH; ALBERS W.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 5; PP. 3476-3479; BIBL. 17 REF.Article

MONOTELLURURE DE GALLIUM, GATEJULIEN POUZOL M; JAULMES S; GUITTARD M et al.1979; ACTA CRYSTALLOGR., B; ISSN 0567-7408; DNK; DA. 1979; VOL. 35; NO 12; PP. 2848-2851; ABS. ENG; BIBL. 13 REF.Article

DENSITIES AND ELECTRICAL CONDUCTIVITIES OF LIQUID TL-TE, IN-TE AND GA-TE SYSTEMSDONG NYUNG LEE; LICHTER BD.1981; MATER. SCI. ENG.; ISSN 0025-5416; CHE; DA. 1981; VOL. 51; NO 2; PP. 213-222; BIBL. 30 REF.Article

RAMAN SCATTERING IN GATE UNDER HYDROSTATIC PRESSUREALLAKHVERDIEV KR; BABAEV SS; SALAEV E YU et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 35; NO 9; PP. 705-708; BIBL. 13 REF.Article

ETUDE DE L'INTERACTION DANS LE SYSTEME GATE-BR2ZAIDOVA GA; GADZHIEV SM; BAKHYSHOV RG et al.1979; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1979; VOL. 15; NO 8; PP. 1482-1483; BIBL. 10 REF.Article

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