Metal grid optimization and emitter tailoring in crystalline silicon solar cellsBIANCONI, M; GALLONI( R.); MAZZONE, A. M et al.Alta frequenza. 1986, Vol 55, Num 4, pp 271-275, issn 0002-6557Article

A TECHNIQUE TO OBTAIN DEEP PENETRATING OHMIC CONTACTS FOR ELECTRICAL MEASUREMENTS ON ION IMPLANTED SILICON.CEMBALI F; GALLONI R; ZIGNANI F et al.1974; J. PHYS. E; G.B.; DA. 1974; VOL. 7; NO 9; PP. 698-700; BIBL. 4 REF.Article

RADIATION DAMAGE IN SILICON PRODUCED BY PHOSPHORUS IMPLANTATION: RANDOM AND ALIGNED IMPLANTS.CEMBALL F; DORI L; GALLONI R et al.1978; RAD. EFFECTS; G.B.; DA. 1978; VOL. 36; NO 1-2; PP. 111-117; BIBL. 16 REF.Article

Investigation of the potentially offered by ion implantation and electron bean annealing to obtain high efficiency solar cellsGALLONI, R; MERLI, P. G.Solar energy R & D in the European community. Series C. Photovoltaic power generation. 1983, Vol 3, pp 44-51Article

EXPERIMENTAL AND COMPUTER ANALYSIS OF P⁺-ION PENETRATION TAILS IN A SIO₂-SI TWO-LAYER SYSTEMDESALVO A; GALLONI R; ROSA R et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 4; PP. 1994-1997; BIBL. 16 REF.Article

DOPING IN RADIATION DAMAGE PROFILES OF P⁺ IONS IMPLANTED IN SILICON ALONG THE (110) AXIS.CEMBALI F; GALLONI R; MOUSTY F et al.1974; RAD. EFFECTS.; G.B.; DA. 1974; VOL. 21; NO 4; PP. 255-264; BIBL. 28 REF.Article

UNANALYZED ION IMPLANTATION PROCEDURE WITH INCOHERENT LIGHT SCANNING ANNEALING FOR SILICON SOLAR CELLS MANUFACTURINGBENTINI G; CORRERA L; GALLONI R et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 759-763; BIBL. 11 REF.Conference Paper

ANNEALING OF PHOSPHORUS IMPLANTED SILICON WAFERS BY MULTISCANNING ELECTRON BEAM: SOLAR CELLS APPLICATIONBENTINI GG; GALLONI R; GABILLI E et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 11; PP. 6735-6742; BIBL. 27 REF.Article

EFFECT OF LASER IRRADIATION ON THE CHARACTERISTICS OF IMPLANTED LAYERS FOR SILICON SOLAR CELLSZIGNANI F; GALLONI R; PEDULLI L et al.1979; PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. 2/1979/BERLIN; NLD/USA/GBR; DORDRECHT: D. REIDEL/BOSTON: D. REIDEL/LONDON: D. REIDEL; DA. 1979; PP. 213-221; BIBL. 9 REF.;_EUR-6376Conference Paper

Electrical activation of potassium and phosphorus ions implanted in hydrogenated amorphous siliconFONSECA, F. J; GALLONI, R; LARSEN, A. N et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1993, Vol 67, Num 1, pp 107-115, issn 0958-6644Article

Effect of annealing and oxide layer thickness on doping profile shape of «through-oxide» implanted P⁺ ions in textured siliconEL-DESSOUKI, M. S; GALLONI, R.Renewable energy. 1991, Vol 1, Num 1, pp 67-75, issn 0960-1481Article

Amorphous silicon solar cellsGALLONI, R.Renewable energy. 1996, Vol 8, Num 1-4, pp 400-404, issn 0960-1481Conference Paper

Comparison and optimization of different N⁺ dopant profiles for silicon solar cellsCUEVAS, A; BALBUENA, M. A; GALLONI, R et al.Photovoltaic specialists conference. 19. 1987, pp 918-924Conference Paper

Doping and hydrogenation by ion implantation of glow discharge deposited amorphous silicon filmsGALLONI, R; TSUO, Y. S; BAKER, D. W et al.Applied physics letters. 1990, Vol 56, Num 3, pp 241-243, issn 0003-6951Article

Tailored emitter ion-implanted silicon solar cellsGALLONI, R; FAVERO, L; MAZZONE, A. M et al.Solar cells. 1984, Vol 11, Num 1, pp 69-85, issn 0379-6787Article

The nature of electrically inactive antimony in siliconLARSEN, A. N; PEDERSEN, F. T; WEYER, G et al.Journal of applied physics. 1986, Vol 59, Num 6, pp 1908-1917, issn 0021-8979Article

Optimization of relevant deposition parameters for high quality a-SiC:H filmsDEMICHELIS, F; CROVINI, G; PIRRI, C. F et al.Solar energy materials and solar cells. 1995, Vol 37, Num 3-4, pp 315-321, issn 0927-0248Article

Optical, structural and electrical properties of device-quality hydrogenated amorphous silicon-nitrogen films deposited by plasma-enhanced chemical vapour depositionGIORGIS, F; GIULIANI, F; PIRRI, C. F et al.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 1998, Vol 77, Num 4, pp 925-944, issn 1364-2812Article

Boron an phosphorus doping of a-SiC:H thin films by means of ion implantationDEMICHELIS, F; CROVINI, G; PIRRI, C. F et al.Thin solid films. 1995, Vol 265, Num 1-2, pp 113-118, issn 0040-6090Article

Low energy ion-beam post hydrogenation of phosphor implanted amorphous silicon filmsGALLONI, R; RUTH, M; DESALVO, A et al.Physica. B, Condensed matter. 1991, Vol 170, Num 1-4, pp 273-276, issn 0921-4526, 4 p.Conference Paper

Carrier confinement in a-Si_1-xN_x :H multilayer structures for increased light emissionRIZZOLI, R; SUMMONTE, C; RAVA, P et al.Advances in science and technology. 1999, pp 67-74, isbn 88-86538-28-6Conference Paper

The influence of hydrogen dilution on the optoelectronic and structural properties of hydrogenated amorphous silicon carbide filmsDEMICHELIS, F; CROVINI, G; PIRRI, C. F et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1994, Vol 69, Num 2, pp 377-386, issn 0958-6644Article

Powder dissipation in PECVD for SiH₄-CH₄-H₂ gas mixturesRAVA, RP; CROVINI, G; DEMICHELIS, F et al.Journal de physique. IV. 1995, Vol 5, Num 5, pp C5.1125-C5.1132, issn 1155-4339, 2Conference Paper

Photoluminescence and photothermal deflection spectroscopy in potassium doped a-Si:HGALLONI, R; RIZZOLI, R; SUMMONTE, C et al.Journal of non-crystalline solids. 1993, Vol 164-66, pp 635-638, issn 0022-3093, 1Conference Paper

Emitter tailoring in ion implanted and E-beam annealed silicon solar cellsGABILLI, E; GALLONI, R; LULLI, G et al.Photovoltaic solar energy conference. 5. 1984, pp 984-991Conference Paper