Some recent advances in silicon microtechnology and their dependence on processing techniqueHURLEY, R. E; GAMBLE, H. S.Vacuum. 1995, Vol 46, Num 3, pp 287-293, issn 0042-207XArticle

Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substratesMCNEILL, D. W; BHATTACHARYA, S; WADSWORTH, H et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 2, pp 119-123, issn 0957-4522, 5 p.Conference Paper

Phase agile reflectarray cells based on liquid crystalsISMAIL, M. Y; HU, W; CAHILL, R et al.IET microwaves, antennas & propagation (Print). 2007, Vol 1, Num 4, pp 809-814, issn 1751-8725, 6 p.Article

Impact of buried oxide thickness and ground plane resistivity on substrate cross-talk in ground plane silicon-on-insulator (GPSOI) cross-talk suppression technologySTEFANOU, S; HAMEL, J. S; BAINE, P et al.IEEE international SOI conference. 2004, pp 84-85, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper

Thin film sputtered silicon for silicon wafer bonding applicationsHURLEY, R. E; GAMBLE, H. S.Vacuum. 2003, Vol 70, Num 2-3, pp 131-140, issn 0042-207X, 10 p.Conference Paper

Investigation of strain induced effects in silicon wafers due to proximity rapid thermal processing using micro-Raman spectroscopy and synchrotron x-ray topographyLOWNEY, D; PEROVA, T. S; NOLAN, M et al.Semiconductor science and technology. 2002, Vol 17, Num 10, pp 1081-1089, issn 0268-1242Article

SPICE modelling of liquid capacitance in micromachined silicon capillariesRAINEY, P. V; MITCHELL, S. J. N; GAMBLE, H. S et al.SPIE proceedings series. 2001, pp 61-67, isbn 0-8194-4108-2Conference Paper

Production of silicon diaphragms by precision grindingPROCHASKA, A; BAINE, P. T; MITCHELL, S. J. N et al.SPIE proceedings series. 2000, pp 244-255, isbn 0-8194-3830-8Conference Paper

Deposition of tungsten by plasma enhanced chemical vapour depositionBAIN, M. F; ARMSTRONG, B. M; GAMBLE, H. S et al.Journal de physique. IV. 1999, Vol 9, Num 8, pp Pr8.827-Pr8.833, issn 1155-4339, 2Conference Paper

Growth mechanism of epitaxial silicon carbide produced using rapid thermal CVDRUDDELL, F. H; ARMSTRONG, B. M; GAMBLE, H. S et al.Journal de physique IV. Colloque. 1991, Vol 1, Num 2, pp C2.823-C2.830Conference Paper

Germanium on sapphire substrates for system on a chipGAMBLE, H. S; ARMSTRONG, B. M; BAINE, P. T et al.Materials science in semiconductor processing. 2008, Vol 11, Num 5-6, pp 195-198, issn 1369-8001, 4 p.Conference Paper

Germanium MOS capacitors with hafnium dioxide and silicon dioxide dielectricsWADSWORTH, H. J; BHATTACHARYA, S; MCNEILL, D. W et al.Materials science in semiconductor processing. 2006, Vol 9, Num 4-5, pp 685-689, issn 1369-8001, 5 p.Conference Paper

Selective deposition of CVD iron on silicon dioxide and tungstenLOW, Y. H; BAIN, M. F; BIEN, D. C. S et al.Microelectronic engineering. 2006, Vol 83, Num 11-12, pp 2229-2233, issn 0167-9317, 5 p.Conference Paper

Quasi-optical beam steering using a MEMS reflector arraySRIGENGAN, V; MITCHELL, S. J. N; FUSCO, V. F et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 585-592, issn 0277-786X, isbn 0-8194-5810-4, 1Vol, 8 p.Conference Paper

Rapid thermal oxidation of Ge-rich strained layersDAS, S; CHAKRABORTY, S; MOORE, R. A et al.International conference on microelectronics. 2004, isbn 0-7803-8166-1, 2Vol, vol 2, 479-482Conference Paper

The deposition and characterisation of CVD tungsten silicide for applications in microelectronicsBAIN, M. F; ARMSTRONG, B. M; GAMBLE, H. S et al.Vacuum. 2002, Vol 64, Num 3-4, pp 227-232, issn 0042-207XConference Paper

Polycrystalline silicon film growth in a SiF₄/SiH₄/H₂ plasmaLEE, B; QUINN, L. J; BAINE, P. T et al.Thin solid films. 1999, Vol 337, Num 1-2, pp 55-58, issn 0040-6090Conference Paper

Large-area shower implanter for thin-film transistorsWU, Y; MONTGOMERY, J. H; REFSUM, A et al.IEE proceedings. Circuits, devices and systems. 1994, Vol 141, Num 1, pp 23-26, issn 1350-2409Article

The study of selectivity in silicon selective epitaxial growthLIANG YE; ARMSTRONG, B. M; GAMBLE, H. S et al.Microelectronic engineering. 1994, Vol 25, Num 2-4, pp 153-158, issn 0167-9317Conference Paper

LRP equipment characterisation at low temperatures and application to polysilicon bipolar emitter processingRUDDELL, F; PARKES, C; ARMSTRONG, B. M et al.Semiconductor science and technology. 1990, Vol 5, Num 7, pp 765-770, issn 0268-1242Article

Single sideband FSS with high image rejectionDICKIE, R; CAHILL, R; GAMBLE, H. S et al.Electronics Letters. 2006, Vol 42, Num 20, pp 1137-1138, issn 0013-5194, 2 p.Article

Characterisation of copper inductors fabricated by dual damascene and electroplating techniquesTOH, B. H. W; MCNEILL, D. W; GAMBLE, H. S et al.Journal of materials science. Materials in electronics. 2005, Vol 16, Num 4, pp 233-238, issn 0957-4522, 6 p.Article

Nucleation and growth of ecd cu on PVD TiN from low acid sulfate electrolyteMAGAGNIN, L; VICENZO, A; BAIN, M et al.Microelectronic engineering. 2004, Vol 76, Num 1-4, pp 131-136, issn 0167-9317, 6 p.Conference Paper

Electrical properties of high-k ZrO₂ gate dielectrics on strained Ge-rich layersBHATTACHARYA, S; MCCARTHY, J; ARMSTRONG, B. M et al.International conference on microelectronics. 2004, isbn 0-7803-8166-1, 2Vol, vol 1, 405-407Conference Paper

Fabrication of sub-micron active layer SSOI substrates using ion splitting and wafer bonding technologiesRUDDELL, F. H; BAIN, M. F; SUDER, S et al.Proceedings - Electrochemical Society. 2003, pp 25-30, issn 0161-6374, isbn 1-56677-402-0, 6 p.Conference Paper