A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configurationDIAB, A; FERNANDEZ, C; MAZURE, C et al.Solid-state electronics. 2013, Vol 90, pp 127-133, issn 0038-1101, 7 p.Conference Paper

Strained Si/SiGe heterostructures at low temperatures. A Monte Carlo studyGAMIZ, F; ROLDAN, J. B; LOPEZ-VILLANUEVA, J. A et al.Journal de physique. IV. 1996, Vol 6, Num 3, pp C3.87-C3.92, issn 1155-4339Conference Paper

A Simple Approach to Quantum Confinement in Tunneling Field-Effect TransistorsPADILLA, J. L; GAMIZ, F; GODOY, A et al.IEEE electron device letters. 2012, Vol 33, Num 10, pp 1342-1344, issn 0741-3106, 3 p.Article

On the extension of ET-FDSOI roadmap for 22 nm node and beyondSAMPEDRO, C; GAMIZ, F; GODOY, A et al.Solid-state electronics. 2013, Vol 90, pp 23-27, issn 0038-1101, 5 p.Conference Paper

Monte Carlo simulation of Hall and magnetoresistance mobility in SOI devicesDONETTI, L; GAMIZ, F; CRISTOLOVEANU, S et al.Solid-state electronics. 2007, Vol 51, Num 9, pp 1216-1220, issn 0038-1101, 5 p.Article

Electron mobility and magneto transport study of ultra-thin channel double-gate Si MOSFETsPRUNNILA, M; AHOPELTO, J; GAMIZ, F et al.Solid-state electronics. 2005, Vol 49, Num 9, pp 1516-1521, issn 0038-1101, 6 p.Article

Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETsVELAYUDHAN, V; GAMIZ, F; MARTIN-MARTINEZ, J et al.Microelectronics and reliability. 2013, Vol 53, Num 9-11, pp 1243-1246, issn 0026-2714, 4 p.Conference Paper

Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETsCHERALATHAN, M; SAMPEDRO, C; ROLDAN, J. B et al.Semiconductor science and technology. 2011, Vol 26, Num 9, issn 0268-1242, 095015.1-095015.7Article

Characterization of electron transport at high fields in silicon-on-insulator devices : a Monte Carlo studyROLDAN, J. B; GAMIZ, F; ROLDAN, A et al.Semiconductor science and technology. 2006, Vol 21, Num 1, pp 81-86, issn 0268-1242, 6 p.Article

A comprehensive study of carrier velocity modulation in DGSOI transistorsSAMPEDRO, C; GAMIZ, F; GODOY, A et al.Solid-state electronics. 2005, Vol 49, Num 9, pp 1504-1509, issn 0038-1101, 6 p.Article

Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETsGAMIZ, F; GODOY, A; ROLDAN, J. B et al.Semiconductor science and technology. 2003, Vol 18, Num 11, pp 927-937, issn 0268-1242, 11 p.Article

Universality of electron mobility curves in MOSFETs: a Monte Carlo studyGAMIZ, F; LOPEZ-VILLANUEVA, J. A; BANQUERI, J et al.I.E.E.E. transactions on electron devices. 1995, Vol 42, Num 2, pp 258-265, issn 0018-9383Article

Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: The role of crystallographic orientationBALAGUER, M; ROLDAN, J. B; DONETTI, L et al.Solid-state electronics. 2012, Vol 67, Num 1, pp 30-37, issn 0038-1101, 8 p.Article

Reaching sub-32 nm nodes: ET-FDSOI and BOX optimizationSAMPEDRO, C; GAMIZ, F; DONETTI, L et al.Solid-state electronics. 2012, Vol 70, pp 101-105, issn 0038-1101, 5 p.Conference Paper

An analytical model for square GAA MOSFETs including quantum effectsMORENO, E; ROLDAN, J. B; RUIZ, F. G et al.Solid-state electronics. 2010, Vol 54, Num 11, pp 1463-1469, issn 0038-1101, 7 p.Article

Electron mobility in strained Si inversion layers grown on SiGe-on-insulator substratesGAMIZ, F; ROLDAN, J. B; GODOY, A et al.Proceedings - Electrochemical Society. 2003, pp 343-348, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

A computational study of the strained-Si MOSFET : a possible alternative for the next century electronics industryROLDAN, J. B; GAMIZ, F; LOPEZ-VILLANUEVA, J. A et al.Computer physics communications. 1999, Vol 121-22, pp 547-549, issn 0010-4655Conference Paper

Understanding the improved performance of strained Si/Si_1-xGe_x channel MOSFETsROLDAN, J. B; GAMIZ, F; LOPEZ-VILLANUEVA, J. A et al.Semiconductor science and technology. 1997, Vol 12, Num 12, pp 1603-1608, issn 0268-1242Article

Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETsGAMIZ, F; BANQUERI, J; CARCELLER, J. E et al.Solid-state electronics. 1995, Vol 38, Num 3, pp 611-614, issn 0038-1101Article

Analytical model for the threshold voltage of III-V nanowire transistors including quantum effectsMARIN, E. G; RUIZ, F. G; TIENDA-LUNA, I. M et al.Solid-state electronics. 2014, Vol 92, pp 28-34, issn 0038-1101, 7 p.Article

Simulation of Fabricated 20-nm Schottky Barrier MOSFETs on SOI: Impact of Barrier LoweringPADILLA, J. L; KNOLL, L; GAMIZ, F et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 5, pp 1320-1327, issn 0018-9383, 8 p.Article

An in-depth simulation study of Coulomb mobility in ultra-thin-body SOI MOSFETsJIMENEZ-MOLINOS, F; ROLDAN, J. B; BALAGUER, M et al.Semiconductor science and technology. 2010, Vol 25, Num 5, issn 0268-1242, 055002.1-055002.8Article

IVIulti-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOISAMPEDRO, C; GAMIZ, F; GODOY, A et al.Solid-state electronics. 2010, Vol 54, Num 2, pp 131-136, issn 0038-1101, 6 p.Article

Hole transport in DGSOI devices: Orientation and silicon thickness effectsDONETTI, L; GAMIZ, F; RODRIGUEZ, N et al.Solid-state electronics. 2010, Vol 54, Num 2, pp 191-195, issn 0038-1101, 5 p.Article

Image and exchange-correlation effects in double gate silicon-on-insulator transistorsGAMIZ, F; CARTUJO-CASSINELLO, P; JIMENEZ-MOLINOS, F et al.Microelectronic engineering. 2004, Vol 72, Num 1-4, pp 374-378, issn 0167-9317, 5 p.Conference Paper