Focused ion beam technologyGAMO, K.Semiconductor science and technology. 1993, Vol 8, Num 6, pp 1118-1123, issn 0268-1242Article

Ion beam microfabricationGAMO, K.Vacuum. 1993, Vol 44, Num 11-12, pp 1089-1094, issn 0042-207XConference Paper

ION BEAM ASSISTED MASKLESS ETCHING OF GAAS BY 50 KEV FOCUSED ION BEAMGAMO K; OCHIAI Y; NAMBA S et al.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 21; NO 12; PP. L792-L794; BIBL. 8 REF.Article

PHOTOLUMINESCENCE AND ELECTRICAL MEASUREMENTS ON MANGANESE ION-IMPLANTED GAAS.MIIN SHYONG LIN; GAMO K; MASUDA K et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 1; PP. 53-56; BIBL. 18 REF.Article

RESISTANCE CHANGES INDUCED BY ELECTRON SPIN RESONANCE IN ION-IMPLANTED SI:P SYSTEM.MURAKAMI K; NAMBA S; KISHIMOTO N et al.1977; SCI. PAPERS INST. PHYS. CHEM. RES.; JAP.; DA. 1977; VOL. 71; NO 4; PP. 103-110; BIBL. DISSEM.Article

A study on the characteristics of low-energy ion-beam-assisted deposition of tungstenKOH, Y.-B; GAMO, K.Japanese journal of applied physics. 1992, Vol 31, Num 4, pp 1228-1231, issn 0021-4922, 1Article

DYNAMIC BEHAVIOR OF MODE-LOCKED ND: YAG LASER ANNEALING IN ION-IMPLANTED SI, GAAS, AND GAPMURAKAMI K; GAMO K; NAMBA S et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 8; PP. 628-630; BIBL. 12 REF.Article

RESISTANCE CHANGES INDUCED BY ELECTRON-SPIN RESONANCE IN ION-IMPLANTED SI:P SYSTEM.MURAKAMI K; NAMBA S; KISHIMOTO N et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 4; PP. 2401-2406; BIBL. 15 REF.Article

ANNEALING OF EXPANSION IN ION-IMPLANTED GAAS.HANAZAWA T; YAMAGUCHI J; GAMO K et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 9; PP. 1487-1488; BIBL. 4 REF.Article

Microfabrication using focused ion beamsGAMO, K; NAMBA, S.Microelectronic engineering. 1990, Vol 11, Num 1-4, pp 403-408, issn 0167-9317Conference Paper

Ion beam lithographyGAMO, K; NAMBA, S.Ultramicroscopy. 1984, Vol 15, Num 3, pp 261-269, issn 0304-3991Article

FABRICATION OF NB VARIABLE-THICKNESS- AND POINT CONTACT-TYPE BRIDGES BY MEANS OF MICROFABRICATION TECHNOLOGYGAMO K; HARADA T; ARIMOTO K et al.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 10; PP. 2033-2035; BIBL. 6 REF.Article

EFFECTS OF ION-IMPLANTED ATOMS UPON CONDUCTION ELECTRON SPIN RESONANCE (CESR) IN A SI:P SYSTEM.MURAKAMI K; MASUDA K; GAMO K et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 6; PP. 300-302; BIBL. 7 REF.Article

PHOTOLUMINESCENCE STUDY OF CD-ION IMPLANTED N-GAAS.AOKI K; GAMO K; MASUDA K et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 1; PP. 145-149; BIBL. 18 REF.Article

LATTICE SITE LOCATION OF CADMIUM AND TELLURIUM IMPLANTED IN GALLIUM ARSENIDE.TAKAI M; GAMO K; MASUDA K et al.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 12; PP. 1935-1941; BIBL. 15 REF.Article

DIFFUSION OF ARSENIC ATOMS FROM ION-IMPLANTED LAYERS IN SILICON.YOKOTA K; IWAKI M; GAMO K et al.1976; ANNU. REP. RES. REACTOR INST. KYOTO UNIV.; JAP.; DA. 1976; VOL. 9; PP. 19-25; BIBL. 8 REF.Article

LASER ANNEALING OF OHMIC CONTACTS ON GAASORABY AH; MURAKAMI K; YUBA Y et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 7; PP. 562-564; BIBL. 8 REF.Article

INFLUENCE OF SPIN DENSITY IN IMPLANTED SI LAYERS ON PULSED-LASER ANNEALINGMURAKAMI K; IKAWA E; GAMO K et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 5; PP. 413-415; BIBL. 15 REF.Article

EXPERIMENTAL METHOD FOR MEASURING BOTH ATOM AND CARRIER CONCENTRATION PROFILES IN THE SAME SAMPLE OF ION-IMPLANTED SILICON LAYERS BY RADIOACTIVE-ION IMPLANTATION.IWAKI M; GAMO K; MASUDA K et al.1975; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1975; VOL. 127; NO 1; PP. 93-98; BIBL. 12 REF.Article

ELECTRICAL PROPERTIES OF LASER-ANNEALED GLOW-DISCHARGE AMORPHOUS SILICON LAYERSYOUN KYU KOH; OKAMOTO H; MURAKAMI K et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 5; PP. 849-853; BIBL. 19 REF.Article

CONCENTRATION PROFILES OF ION-IMPLANTED IONS IN SILICONNAMBA S; MASUDA K; GAMO K et al.1972; IN: ELECTRON ION BEAM SCI. TECHNOL. VTH INT. CONF.; PRINCETON; ELECTROCHEM. SOC.; DA. 1972; PP. 254-264; BIBL. 9 REF.Conference Proceedings

CONTROL OF TC FOR NIOBIUM BY N ION IMPLANTATION.GAMO K; GOSHI H; TAKAI M et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; NO 10; PP. 1853-1857; BIBL. 9 REF.Article

TELLURIUM IMPLANTATION IN GAAS.EISEN FH; WELCH BM; MULLER H et al.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 3; PP. 219-223; BIBL. 17 REF.Article

Ion-beam-assisted etching in Ga⁺/GaAs/Cl₂ systemKOSUGI, T; IWASE, H; GAMO, K et al.Japanese journal of applied physics. 1993, Vol 32, Num 6B, pp 3051-3057, issn 0021-4922, 1Conference Paper

Stoichiometric change in gallium arsenide after laser-induced thermochemical etchingTOKUDA, J; TAKAI, M; GAMO, K et al.Japanese journal of applied physics. 1987, Vol 26, Num 4, pp L270-L272, issn 0021-4922, 2Article