On the effect of oxygen partial pressure on the chromium distribution coefficient in melt-grown ruby crystalsGANSCHOW, Steffen; KLIMM, Detlef; BERTRAM, Rainer et al.Journal of crystal growth. 2011, Vol 325, Num 1, pp 81-84, issn 0022-0248, 4 p.Article

Inductively heated Bridgman method for the growth of zinc oxide single crystalsSCHULZ, Detlev; GANSCHOW, Steffen; KLIMM, Detlef et al.Journal of crystal growth. 2008, Vol 310, Num 7-9, pp 1832-1835, issn 0022-0248, 4 p.Article

5th International Workshop on Crystal Growth Technology, Berlin, Germany, 26 June-30 June 2011UECKER, Reinhard; BLISS, David F; GANSCHOW, Steffen et al.Journal of crystal growth. 2012, Vol 360, issn 0022-0248, 204 p.Conference Proceedings

Nonlinear model-based control of the Czochralski process III: Proper choice of manipulated variables and controller parameter schedulingNEUBERT, M; WINKLER, J.Journal of crystal growth. 2012, Vol 360, pp 3-11, issn 0022-0248, 9 p.Conference Paper

Purification of silicon for photovoltaic applicationsDELANNOY, Yves.Journal of crystal growth. 2012, Vol 360, pp 61-67, issn 0022-0248, 7 p.Conference Paper

Optical in-situ spectroscopy of high-temperature properties of olivinesJIANMIN SHI; DLUGOCZ, Stephen; GANSCHOW, Steffen et al.Zeitschrift für Kristallographie. 2011, Vol 226, Num 1, pp 89-92, issn 0044-2968, 4 p.Article

Bridgman-grown zinc oxide single crystalsSCHULZ, Detlev; GANSCHOW, Steffen; KLIMM, Detlef et al.Journal of crystal growth. 2006, Vol 296, Num 1, pp 27-30, issn 0022-0248, 4 p.Article

Analysis of the practical stability of dewetted Bridgman growth of GaAsEPURE, Simona; DUFFAR, Thierry.Journal of crystal growth. 2012, Vol 360, pp 25-29, issn 0022-0248, 5 p.Conference Paper

Problems and recent advances in melt crystal growth technologyZHARIKOV, Evgeny V.Journal of crystal growth. 2012, Vol 360, pp 146-154, issn 0022-0248, 9 p.Conference Paper

Study on influence of growth conditions on position and shape of crystal/melt interface of alkali lead halide crystals at Bridgman growthKRAL, Robert.Journal of crystal growth. 2012, Vol 360, pp 162-166, issn 0022-0248, 5 p.Conference Paper

Effects of static magnetic fields on thermal fluctuations in the melt of industrial CZ-Si crystal growthXIN LIU; LIJUN LIU; ZAOYANG LI et al.Journal of crystal growth. 2012, Vol 360, pp 38-42, issn 0022-0248, 5 p.Conference Paper

Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001 ) sapphire substratesTOGASHI, Rie; NAGASHIMA, Toru; HARADA, Manabu et al.Journal of crystal growth. 2012, Vol 360, pp 197-200, issn 0022-0248, 4 p.Conference Paper

Single crystals of novel alkali metal intercalated iron chalcogenide superconductorsKRZTON-MAZIOPA, A; POMJAKUSHINA, E; CONDER, K et al.Journal of crystal growth. 2012, Vol 360, pp 155-157, issn 0022-0248, 3 p.Conference Paper

Melt growth of ZnO bulk crystals in Ir cruciblesJACOBS, Klaus; SCHULZ, Detlev; KLIMM, Detlef et al.Solid state sciences. 2010, Vol 12, Num 3, pp 307-310, issn 1293-2558, 4 p.Conference Paper

Effective simulation of the effect of a transverse magnetic field (TMF) in Czochralski Silicon growthCOLLET, Yoan; MAGOTTE, Olivier; VAN DEN BOGAERT, Nathalie et al.Journal of crystal growth. 2012, Vol 360, pp 18-24, issn 0022-0248, 7 p.Conference Paper

Growth of eutectic ceramic structures by directional solidification methodsORERA, V. M; PENA, J. I; OLIETE, P. B et al.Journal of crystal growth. 2012, Vol 360, pp 99-104, issn 0022-0248, 6 p.Conference Paper

Microstructural stability at elevated temperatures of directionally solidified Al₂O₃/Er₃Al₅O₁₂ eutectic ceramicsMESA, M. C; OLIETE, P. B; LARREA, A et al.Journal of crystal growth. 2012, Vol 360, pp 119-122, issn 0022-0248, 4 p.Conference Paper

Numerical studies on a type of mechanical stirring in directional solidification method of multicrystalline silicon for photovoltaic applicationsDUMITRICA, S; VIZMAN, D; GARANDET, J.-P et al.Journal of crystal growth. 2012, Vol 360, pp 76-80, issn 0022-0248, 5 p.Conference Paper

Perfection of NaNO3 single crystals grown by axial vibrational control technique in Czochralski configurationAVETISSOV, I. Ch; SADOVSKIY, A. P; SUKHANOVA, E. A et al.Journal of crystal growth. 2012, Vol 360, pp 167-171, issn 0022-0248, 5 p.Conference Paper

Processing, microstructure and optical properties of the directionally solidified Al₂O₃―EuAlO₃ eutectic rodsOLIETE, Patricia B; MESA, M. Cristina; MERINO, Rosa I et al.Journal of crystal growth. 2012, Vol 360, pp 123-126, issn 0022-0248, 4 p.Conference Paper

Crystal growth of rutile by tilting-mirror-type floating zone methodWATAUCHI, Satoshi; RAZZAQUE SARKER, Abdur; NAGAO, Masanori et al.Journal of crystal growth. 2012, Vol 360, pp 105-110, issn 0022-0248, 6 p.Conference Paper

Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B₂O₃TAISHI, Toshinori; HASHIMOTO, Yoshio; ISE, Hideaki et al.Journal of crystal growth. 2012, Vol 360, pp 47-51, issn 0022-0248, 5 p.Conference Paper

Float-Zone silicon crystal growth at reduced RF frequenciesROST, H.-J; MENZEL, R; LUEDGE, A et al.Journal of crystal growth. 2012, Vol 360, pp 43-46, issn 0022-0248, 4 p.Conference Paper

Heat distribution during melting and solidification of NaI(Tl) using skull techniqueTARANYUK, V; GEKTIN, A; KISIL, I et al.Journal of crystal growth. 2012, Vol 360, pp 95-98, issn 0022-0248, 4 p.Conference Paper

Modern trends in crystal growth and new applications of sapphireAKSELROD, Mark S; BRUNI, Frank J.Journal of crystal growth. 2012, Vol 360, pp 134-145, issn 0022-0248, 12 p.Conference Paper