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SECOND BREAKDOWN IN HIGH-VOLTAGE SWITCHING TRANSISTORS.GAUR SP.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 20; PP. 525-527; BIBL. 5 REF.Article

SAFE OPERATING AREA FOR BIPOLAR TRANSISTORS.GAUR SP.1977; I.B.M. J. RES. DEVELOP.; U.S.A.; DA. 1977; VOL. 21; NO 5; PP. 433-442; BIBL. 16 REF.Article

PERFORMANCE LIMITATIONS OF SILICON BIPOLAR TRANSISTORSGAUR SP.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 4; PP. 415-421; BIBL. 30 REF.Article

PERFORMANCE LIMITATIONS OF SILICON BIPOLAR TRANSISTORSGAUR SP.1979; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1979; VOL. 14; NO 2; PP. 337-343; BIBL. 30 REF.Article

TWO DIMENSIONAL CARRIER FLOW IN A TRANSISTOR STRUCTURE UNDER NONISOTHERMAL CONDITIONS.GAUR SP; NAVON DH.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 1; PP. 50-57; BIBL. 36 REF.Article

NUMERICAL SOLUTION OF SEMICONDUCTOR TRANSPORT EQUATIONS IN TWO DIMENSIONS BY MULTI-GRID METHOD.GAUR SP; BRANDT A.1977; IN: ADV. COMPUT. METHODS PARTIAL DIFFER. EQUATIONS. INT. SYMP. 2. PROC.; BETHLEHEM, PA.; 1977; NEW BRUNSWICK, N.J.; IMACS; DA. 1977; PP. 327-329; BIBL. 4 REF.Conference Paper

REACTION OF ETHYL GAMMA -NITROBUTYRATE WITH BENZALDEHYDE IN PRESENCE OF AMINE ACETATE: AN EXAMPLE OF TRAPPING OF AMINO-INTERMEDIATE IN KNOEVENAGEL REACTION.BHAGWATHEESWARAN H; GAUR SP; JAIN PC et al.1976; INDIAN J. CHEM., B; INDIA; DA. 1976; VOL. 14; NO 9; PP. 699-700; BIBL. 9 REF.Article

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