au.\*:("GAUTHERIN G")
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UN CANON A IONS SUPRATHERMIQUES (5-50 EV) POUR L'ETUDE DES INTERACTIONS DECHARGE-SURFACE.GAUTHERIN G; LEJEUNE C.1976; J. PHYS. D; G.B.; DA. 1976; VOL. 9; NO 7; PP. 1149-1164; ABS. ANGL.; BIBL. 14 REF.Article
SOME TRENDS IN PREPARING FILM STRUCTURES BY ION BEAM METHODS.GAUTHERIN G; WEISSMANTEL C.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 50; PP. 135-144; BIBL. 35 REF.Article
ETUDE D'UNE SOURCE D'ANALYSEUR DE GAZ RESIDUELS PAR SIMULATION NUMERIQUEGAUTHERIN G; GRANDCHAMP JP.1972; VIDE; FR.; DA. 1972; NO 157, SUPPL; PP. 119-126; BIBL. 3 REF.Serial Issue
UNE NOUVELLE SOURCE D'IONS POUR ANALYSEUR DE GAZ: LE MAGNETRON A CATHODE PHOTOEMISSIVEGAUTHERIN G; GOLESTANIAN N.1972; VIDE; FR.; DA. 1972; NO 157, SUPPL; PP. 135-142; BIBL. 4 REF.Serial Issue
UN CANON A IONS ET NEUTRES SUPRATHERMIQUES (1-50 EV) POUR L'ETUDE DES INTERACTIONS DECHARGE-SURFACE.DELMAS M; GAUTHERIN G; LEJEUNE C et al.1976; REV. GEN. ELECTR.; FR.; DA. 1976; VOL. 85; NO 9; PP. 687-695; ABS. ANGL.; BIBL. 10 REF.Article
PROCESSUS PHYSIQUES DE LA DECHARGE DANS UNE NOUVELLE SOURCE D'IONS: LE TRIPLASMATRONAUBERT J; GAUTHERIN G; LEJEUNE C et al.1972; C.R. ACAD. SCI., B; FR.; DA. 1972; VOL. 275; NO 15; PP. 537-540; BIBL. 4 REF.Serial Issue
Characterization of ion-beam-sputtered tungsten films on silicon = Caractérisation des couches de tungstène pulvérisées par faisceau ionique sur le siliciumMEYER, F; SCHWEBEL, C; PELLET, C et al.Applied surface science. 1989, Vol 36, Num 1-4, pp 231-239, issn 0169-4332Conference Paper
Growth of silicon homoepitaxial thin films by ultrahigh vacuum ion beam sputter depositionSCHWEBEL, C; MEYER, F; GAUTHERIN, G et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1986, Vol 4, Num 5, pp 1153-1158, issn 0734-211XArticle
Annealing effect on mechanical stress in reactive ion-beam sputter-deposited silicon nitride filmsFOURRIER, A; BOSSEBOEUF, A; BOUCHIER, D et al.Japanese journal of applied physics. 1991, Vol 30, Num 7, pp 1469-1474, issn 0021-4922, 1Article
Ion energy effects on the intrinsic stress in BxNy layers deposited by ion-beam-assisted evaporationSTAMBOULI, V; BURAT, O; BOUCHIER, D et al.Surface & coatings technology. 1990, Vol 43-44, Num 1-3, pp 137-144, issn 0257-8972, 8 p.Conference Paper
Thermal oxidation in wet oxygen of reactive ion-beam sputter-deposited silicon nitride filmsFOURRIER, A; BOSSEBOEUF, A; BOUCHIER, D et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 4, pp 1084-1089, issn 0013-4651, 6 p.Article
Characterization and growth mechanisms of boron nitrides films synthesized by ion-beam-assisted depositionBURAT, O; BOUCHIER, D; STAMBOULI, V et al.Journal of applied physics. 1990, Vol 68, Num 6, pp 2780-2790, issn 0021-8979Article
Low-pressure oxidation of silicon stimulated by low-energy electron bombardmentCOLLOT, P; GAUTHERIN, G; AGIUS, B et al.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1985, Vol 52, Num 6, pp 1051-1069, issn 0141-8637Article
Argon incorporation effects on the conductivity of metal layersSTAMBOULI, V; BURAT, O; BOUCHIER, D et al.Thin solid films. 1990, Vol 193-194, Num 1-2, pp 181-188, issn 0040-6090, 8 p., . 1Conference Paper
Ion beam sputtering deposition of tungsten: energy and mass effects of primary ions = Dépôt par pulvérisation par faisceau ionique de tungstène: influences de l'énergie et de la masse des ions primairesMEYER, F; BOUCHIER, D; STAMBOULI, V et al.Applied surface science. 1989, Vol 38, Num 1-4, pp 286-294, issn 0169-4332Article
Epitaxial growth of single-crystal Si1-xGex on Si(100) by ion beam sputter depositionMEYER, F; SCHWEBEL, C; PELLET, C et al.Thin solid films. 1990, Vol 184, pp 117-123, issn 0040-6090, 7 p.Conference Paper
Effects of impurities on the interface of ion beam sputtered tungsten with siliconMEYER, F; BOUCHIER, D; ABDELHAMID BENHOCINE et al.Applied surface science. 1991, Vol 53, pp 82-86, issn 0169-4332Conference Paper
WNx films prepared by reactive ion-beam sputter depositionBOSSEBOEUF, A; FOURRIER, A; MEYER, F et al.Applied surface science. 1991, Vol 53, pp 353-357, issn 0169-4332Conference Paper
Source d'ions pour réacteurs de gravure par faisceaux d'ions réactifs = Ion source for reactors used in reactive ion beam etchingGAUTHERIN, G; LEJEUNE, C; GRANDCHAMP, J. P et al.1984, 54 p.Report
