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ELECTRICAL AND INFRARED SPECTROSCOPIC INVESTIGATIONS OF OXYGEN-RELATED DONORS IN SILICONWRUCK D; GAWORZEWSKI P.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 56; NO 2; PP. 557-564; ABS. GER; BIBL. 24 REF.Article

ON THE DONOR ACTIVITY OF OXYGEN IN SILICON AT TEMPERATURES FROM 500 TO 800OCSCHMALZ K; GAWORZEWSKI P.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 64; NO 1; PP. 151-158; ABS. GER; BIBL. 18 REF.Article

ON THE ELECTRICAL ACTIVITY OF OXYGEN IN SILICONGAWORZEWSKI P; SCHMALZ K.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 55; NO 2; PP. 699-707; ABS. GER; BIBL. 20 REF.Article

ON THE KINETICS OF THERMAL DONORS IN OXYGEN-RICH SILICON IN THE RANGE FROM 450 TO 900OCGAWORZEWSKI P; SCHMALZ K.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 58; NO 2; PP. K223-K226; BIBL. 9 REF.Article

ON THE EFFECT OF HEAT TREATMENT UPON THE CHARGE CARRIER CONCENTRATION OF DISLOCATION-FREE FLOATING-ZONED SILICON CRYSTALS.GAWORZEWSKI P; RIEMANN H.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 46; NO 1; PP. 117-124; ABS. ALLEM.; BIBL. 11 REF.Article

ON THE OUT-DIFFUSION OF OXYGEN FROM SILICONGAWORZEWSKI P; RITTER G.1981; PHYS. STATUS SOLIDI(A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 67; NO 2; PP. 511-516; ABS. GER; BIBL. 13 REF.Article

BEEINFLUSSUNG DES SPEZIFISCHEN WIDERSTANDES VON SAUERSTOFFREICHEN SILIZIUM-EINKRISTALLEN DURCH TEMPERPROZESSE. = INFLUENCE DE LA RESISTANCE SPECIFIQUE DE MONOCRISTAUX DE SILICIUM RICHES EN OXYGENE AU COURS DE PROCESSUS THERMIQUESGAWORZEWSKI P; RIEMANN H.1977; KRISTALL. U. TECH.; DTSCH.; DA. 1977; VOL. 12; NO 2; PP. 189-196; ABS. ANGL.; BIBL. 11 REF.Article

ZUR KINETISCHEN IONEN-ELEKTRONEN-EMISSION BEIM BESCHUSS VON SILIZIUM MIT EDELGASIONEN IN ENERGIEBEREICH 1.5-25 KEV = SUR LA CINETIQUE DE L'EMISSION D'IONS ET D'ELECTRONS PAR LE SILICIUM SOUS L'ACTION D'UN BOMBARDEMENT D'IONS DE GAZ RARE DANS LE DOMAINE D'ENERGIE 1,5-25 KEVGAWORZEWSKI P; KREBS KH; MAI M et al.1973; INTERNATION. J. MASS SPECTROM. ION PHYS.; NETHERL.; DA. 1973; VOL. 10; NO 4; PP. 425-435; ABS. ANGL.; BIBL. 31 REF.Serial Issue

ZUM NACHWEIS VON SAUERSTOFF IN MIKROBEREICHEN VON VERSETZUNGSFREIEN CZOCHRALSKI-SILIZIUM-EINKRISTALLEN. = MISE EN EVIDENCE D'OXYGENE DANS LES MICRODOMAINES DE MONOCRISTAUX DE SILICIUM, OBTENUS PAR LA METHODE DE CZOCHRALSKI, SOUS DISLOCATIONSGAWORZEWSKI P; HAHLE S; RIEMANN H et al.1977; KRISTALL U. TECH.; DTSCH.; DA. 1977; VOL. 12; NO 8; PP. 871-878; ABS. ANGL.; BIBL. 14 REF.Article

Maximum concentration of thermal donors formed at 450 °C in silicon in dependence on the oxygen concentrationGAWORZEWSKI, P; HILD, E.Physica status solidi. A. Applied research. 1986, Vol 94, Num 1, pp K33-K38, issn 0031-8965Conference Paper

The effect of pre-heat-treatments on the formation kinetics of thermal donors in siliconGAWORZEWSKI, P; HILD, E.Physica status solidi. A. Applied research. 1985, Vol 92, Num 1, pp 129-135, issn 0031-8965Article

On the effect of ambients on the formation of oxygen-related donors in Cz-SiSCHMALZ, K; GAWORZEWSKI, P.Physica status solidi. A. Applied research. 1983, Vol 78, Num 2, pp K141-K145, issn 0031-8965Article

Oxygen-related donors formed at 600°C in silicon in dependence on oxygen and carbon contentGAWORZEWSKI, P; SCHMALZ, K.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp 571-582, issn 0031-8965Article

DOPING PROFILE TECHNIQUES FOR SI EPITAXIAL LAYERSGAWORZEWSKI P; KALMAN L; RAUSCH H et al.1979; J. RADIOANAL. CHEM.; ISSN 0022-4081; CHE; DA. 1979; VOL. 52; NO 1; PP. 93-100; BIBL. 6 REF.Article

Phosphorus segregation at polysilicon-silicon interfaces from in situ P spike-doped silicon filmsKRÜGER, D; GAWORZEWSKI, P; KURPS, R et al.Semiconductor science and technology. 1995, Vol 10, Num 3, pp 326-331, issn 0268-1242Article

ACCUMULATION OF RADIATION DEFECTS IN OXYGEN-CONTAINING SILICON THERMALLY TREATED AT 600OCAKHMETOV VD; BOLOTOV VV; SMIRNOV LS et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 2; PP. K211-K216; BIBL. 20 REF.Article

Deep levels in Czochralski p-Si due to heat treatment at 600 to 900 °CSCHMALZ, K; GAWORZEWSKI, P; KIRSCHT, F.-G et al.Physica status solidi. A. Applied research. 1984, Vol 81, Num 2, pp K165-K169, issn 0031-8965Article

Infrared spectroscopical and TEM investigations of oxygen precipitation in silicon crystals with medium and high oxygen concentrations = Untersuchungen der Sauerstoffausscheidung in Siliziumkristallen mit mittleren und hohen Sauerstoffkonzentrationen mittels Infrarot-Spektroskopie und TEMGAWORZEWSKI, P; HILD, E; VECSERNYES, L et al.Physica status solidi. A. Applied research. 1984, Vol 85, Num 1, pp 133-147, issn 0031-8965Article

Rechnergestützte Messung und Ausvertung von lateralen Verteilungen oder Tiefenprofilen des spezifischen elektrischen Widerstandes von Silizium mittels der Ausbreitungswiderstandsmethode = Mesure assistée par ordinateur et analyse des distributions latérales ou des profils de profondeur de résistivité dans le silicon par la méthode d'étalement de la résistance = Computer-assisted measurement and analysis of lateral distributions or depth profiles of resistivity of silicon by means of the spreading-resistance methodGAWORZEWSKI, P; BRAASCH, B; RADTKE, U et al.Experimentelle Technik der Physik. 1988, Vol 36, Num 3, pp 187-196, issn 0014-4924Article

On carbon-implantation induced donors in siliconSCHMALZ, K; GAWORZEWSKI, P; WINKLER, R et al.Physica status solidi. A. Applied research. 1991, Vol 127, Num 1, pp K39-K43, issn 0031-8965Article

Oxygen donor formation and oxygen precipitation in Czochralski silicon due to heat treatment at 600 to 800°CGAWORZEWSKI, P; HILD, E; SCHMALZ, K et al.Physica status solidi. A. Applied research. 1985, Vol 90, Num 2, pp K151-K156, issn 0031-8965Article

Autodoping of epitaxial silicon layers(II) diffusion-induced autodopingKUHNE, H; GAWORZEWSKI, P; MALZE, W et al.Crystal research and technology (1979). 1985, Vol 20, Num 5, pp 635-644, issn 0232-1300Article

Infrared spectroscopical and TEM investigations of oxygen precipitation in silicon crystals with medium and high oxygen concentrationsGAWORZEWSKI, P; HILD, E; KIRSCHT, F.-G et al.Physica status solidi. A. Applied research. 1984, Vol 85, Num 1, pp 133-147, issn 0031-8965Article

Electrical properties of thermal donors formed in CZ-Si during heat treatment at 450°CEMTSEV, V. V; DALUDA, YU. N; GAWORZEWSKI, P et al.Physica status solidi. A. Applied research. 1984, Vol 85, Num 2, pp 575-584, issn 0031-8965Article

Accumulation of radiation defects in oxygen-containing silicon thermally treated at 6000C = Amas de défauts de rayonnement dans du silicium contenant de l'oxygène ayant subi un traitement thermique à 600°C = Haeufung von Strahlungsfehlern in sauerstoffhaltigem, bei 6000C thermisch behandelten SiliziumAKHMETOV, V.D; BOLOTOV, V.V; SMIRNOV, L.S et al.Physica status solidi. A. Applied research. 1982, Vol 72, Num 2, pp K211-K216, issn 0031-8965Article

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