PRAXIS DER INTEGRIERTEN SCHAEDLINGSBEKAEMPFUNG IN AGRO-OEKOSYSTEMEN = APPLICATION DES PRINCIPES DE LUTTE INTEGREE DANS LES ECOSYSTEMES AGRICOLESGEILER H.1975; BIOL. RDSCH.; DTSCH.; DA. 1975; VOL. 13; NO 4; PP. 226-232; BIBL. 2 REF.Serial Issue

FREILANDDATEN ZUR AUTOEKOLOGISCHEN CHARAKTERISTIK DES GARTENLAUFKAEFERS CARABUS HORTENSIS (COLEOPTERA: CARABIDAE) = DONNEES DE TERRAIN POUR LA CARACTERISATION AUTECOLOGIQUE DE C.H. (C.:C.)GEILER H.1980; ENTOMOL. GEN.; ISSN 0171-8177; DEU; DA. 1980; VOL. 6; NO 2-4; PP. 181-192; ABS. ENG; BIBL. 12 REF.Article

Formation of Ca silicides in insulating CaF₂ layers by ion implantationTHOMAS, A; GEILER, H. D.Physica status solidi. A. Applied research. 1991, Vol 124, Num 1, pp K19-K22, issn 0031-8965Article

Single-beam thermowave analysis of ion implanted and laser annealed semiconductorsWAGNER, M; GEILER, H. D.Measurement science & technology (Print). 1991, Vol 2, Num 11, pp 1088-1093, issn 0957-0233Article

Theoretical evidence for opposite moving phase fronts during ultrafast solidification processesSTOCK, D; GEILER, H.-D; HEHL, K et al.Physica status solidi. A. Applied research. 1985, Vol 87, Num 2, pp K115-K118, issn 0031-8965Article

Phenomenological theory of explosive solid phase crystallization of amorphous silicon. I: Stationary solutionsHEINIG, K. H; GEILER, H.-D.Physica status solidi. A. Applied research. 1985, Vol 92, Num 2, pp 421-430, issn 0031-8965Article

Characterization of bonded wafer stacks by use of the photoelastic-analysis-method : WaferBond'11, International Conference on Wafer Bonding for Microsystems, 3D- and Wafer Level IntegrationGEILER, H; SCHULZ, K; KNECHTEL, R et al.Microsystem technologies. 2013, Vol 19, Num 5, pp 697-703, issn 0946-7076, 7 p.Article

High-performance laser beam shaping and homogenization system for semiconductor processingWAGNER, M; GEILER, H. D; WOLFF, D et al.Measurement science & technology (Print). 1990, Vol 1, Num 11, pp 1193-1201, issn 0957-0233Article

A model of crystallization processes controlled by temperature pulses in amorphous semiconductors. I: Step-like temperature pulseSTOCK, D; GEILER, H.-D; HEHL, K et al.Physica status solidi. A. Applied research. 1985, Vol 89, Num 1, pp 57-63, issn 0031-8965Article

Single-beam thermowave analysis of semiconductorsWAGNER, M; WINKLER, N; GEILER, H. D et al.Applied surface science. 1991, Vol 50, Num 1-4, pp 373-376, issn 0169-4332, 4 p.Conference Paper

Phenomenological theory of explosive solid phase crystallization of amorphous silicon. II: Dynamical processesHEINIG, K. H; GEILER, H.-D.Physica status solidi. A. Applied research. 1986, Vol 93, Num 1, pp 99-104, issn 0031-8965Article

Explosive crystallization in siliconGEILER, H.-D; GLASER, E; GÖTZ, G et al.Journal of applied physics. 1986, Vol 59, Num 9, pp 3091-3099, issn 0021-8979Article

Control of explosive liquid-phase crystallization of ion-implanted silicon layers by double pulse laser irradiationWAGNER, M; GEILER, H.-D; ANDRÄ, G et al.Physica status solidi. A. Applied research. 1984, Vol 83, Num 1, pp K1-K3, issn 0031-8965Article

Laser desorption on Si surfaces by use of multiple excimer laser pulsesSCHLEMM, H; BUCHMANN, F; GEILER, H.-D et al.Applied surface science. 1992, Vol 54, pp 298-301, issn 0169-4332Conference Paper

Detection and analysis of crystal defects in silicon by scanning infrared depolarization and photoluminescence heterodyne techniquesGEILER, H. D; KARGE, H; WAGNER, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, pp 46-50, issn 0921-5107Conference Paper

Investigation of thermophysical properties of AIP coated cutting tools for dry machiningLUGSCHEIDER, E; GEILER, H. D; LAKE, M et al.Surface & coatings technology. 1996, Vol 86-87, Num 1-3, pp 803-808, issn 0257-8972, 2Conference Paper