SUPRALEITENDES BAND MIT AI5-PHASE NIOB-GERMANIUM = COMPOSES SUPRACONDUCTEURS NB-GE DANS LA PHASE A15MUELLER A.1980; Z. METALLKD.; ISSN 0044-3093; DEU; DA. 1980; VOL. 71; NO 8; PP. 507-510; ABS. ENG; BIBL. 18 REF.Article

Solid solubility of germanium in silverKAZEMI, Hamed; WEBER, Ludger.Thermochimica acta. 2012, Vol 544, pp 57-62, issn 0040-6031, 6 p.Article

RELATION MUTUELLE ENTRE LES CARACTERISTIQUES ET LA STRUCTURE DES COUCHES DE NB-GE A T_C ELEVEGOLOVASHKIN AI; PECHEN EV; SKVORTSOV AI et al.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 5; PP. 1324-1330; BIBL. 7 REF.Article

ENTHALPIE DE MELANGE DU GERMANIUM ET DU NEODYME EN PHASE LIQUIDENIKOLAENKO IV; BELOBORODOVA EA; BATALIN GI et al.1980; UKR. HIM. Z.; ISSN 0041-6045; UKR; DA. 1980; VOL. 46; NO 8; PP. 868-869; BIBL. 2 REF.Article

MEASUREMENT OF THE LATTICE CONSTANT OF SI-GE HETEROEPITAXIAL LAYERS GROWN ON A SILICON SUBSTRATEHERZL AHARONI.1978; VACUUM; GBR; DA. 1978; VOL. 28; NO 12; PP. 571-578; BIBL. 10 REF.Conference Paper

STRUCTURE AND ORDER PARAMETER OF AN A15-TYPE NIOBIUM GERMANIUM SINGLE CRYSTALRASMUSSEN SE; HAZELL RG.1979; ACTA CRYSTALLOGR., B; DNK; DA. 1979; VOL. 35; NO 7; PP. 1677-1679; BIBL. 8 REF.Article

ETUDE PAR RAYONS X DE LA STRUCTURE DE QUELQUES ALLIAGES DU SYSTEME CO-GE A L'ETAT LIQUIDEKAZIMIROV VP; SHOVSKIJ VA; BATALIN GI et al.1979; UKRAIN. FIZ. ZH.; UKR; DA. 1979; VOL. 24; NO 6; PP. 738-741; ABS. ENG; BIBL. 5 REF.Article

Electrochemical behaviour of eutectic metal-germanium alloys in sulphuric acidSHEIN, A. B; AITOV, R. G.Electrochimica acta. 1991, Vol 36, Num 8, pp 1247-1251, issn 0013-4686, 5 p.Article

High efficiency solar cells using amorphous silicon and amorphous silicon-germanium based alloysYANG, J; ROSS, R; MOHR, R et al.IEEE photovoltaic specialists conference. 18. 1985, pp 1519-1522Conference Paper

The phase diagram of the Ba-Ge systemPANI, M; PALENZONA, A.Journal of alloys and compounds. 2008, Vol 462, Num 1-2, issn 0925-8388, L9-L11Article

Status of fluorinated amorphous silicon-germanium alloys and multijunction devicesROSS, R; MOHR, R; FOURNIER, J et al.Photovoltaic specialists conference. 19. 1987, pp 327-330Conference Paper

Photoactivité de contacts alliés étain-germanium dans la région infrarouge du spectreMARMUR, I. YA; OKSMAN, YA. A.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 5, pp 888-892, issn 0015-3222Article

The surface transient in Si for SIMS with oblique low-energy O₂⁺ beamsJIANG, Z. X; ALKEMADE, P. F. A.Surface and interface analysis. 1999, Vol 27, Num 3, pp 125-131, issn 0142-2421Article

Photoluminescence properties of SiGe/Si single wells with fluctuating structural parametersLIU, J. P; KONG, M. Y; SI, J. J et al.Journal of physics. D, Applied physics (Print). 1998, Vol 31, Num 23, pp L85-L87, issn 0022-3727Article

A space-qualified cartridge for crystal growth experiments on Ge-SiMÖLLER, U; HELMERS, L; BAHR, G et al.Microgravity, science and technology. 1994, Vol 7, Num 1, pp 68-69, issn 0938-0108Article

Substrate temperature and Ge concentration dependence of the microstructure of strained Si-Ge alloysSHULIN GU; RONGHUA WANG; RONG ZHANG et al.Journal of physics. Condensed matter (Print). 1994, Vol 6, Num 31, pp 6163-6168, issn 0953-8984Article

Amorphous silicon carbon and amorphous silicon germanium alloy research at seriMAHAN, A. H; WILLIAMSON, D. L; RUTH, M et al.IEEE photovoltaic specialists conference. 18. 1985, pp 1513-1518Conference Paper

Possible mechanism for glass-like thermal conductivities in crystals with off-center atomsBRIDGES, F; DOWNWARD, L.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 14, pp 140201.1-140201.4, issn 1098-0121Article

Distribution coefficients of silicon and germanium in SI-Ge solid solutionsKEKUA, M. G; PAGAVA, M. O; GABRICHIDZE, L. L et al.Inorganic materials. 1995, Vol 31, Num 5, pp 661-662, issn 0020-1685Article

Power losses of Nb₃Ge-clad tapes in superposed ac and dc magnetic fieldsKOVACHEV, V. T; NENKOV, K. A.Materials letters (General ed.). 1983, Vol 2, Num 2, pp 111-114, issn 0167-577XArticle

A COMPARISON OF THE CRYSTAL STRUCTURES OF SB₂TL₇, CU₅ZN₈(GAMMA -BRASS), AND IR₃GE₇HELLNER E; KOCH E.1980; CAN. J. CHEM.; ISSN 0008-4042; CAN; DA. 1980; VOL. 58; NO 7; PP. 708-713; ABS. FRE; BIBL. 13 REF.Article

X-RAY DIFFRACTION STUDIES ON HE- AND AR-IRRADIATED NB₃GE THIN FILMSPFLUEGER J; MEYER O.1979; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1979; VOL. 32; NO 11; PP. 1143-1146; BIBL. 13 REF.Article

ZUR KONSTITUTION DER MISCHUNG NIPT_NGE_N' = CONSTITUTION DU MELANGE NIPT_NGE_N'ALASAFI KM; SCHUBERT K.1979; Z. METALLKD.; ISSN 0044-3093; DEU; DA. 1979; VOL. 70; NO 11; PP. 746-749; ABS. ENG; BIBL. 7 REF.Article

STRUCTURAL PROPERTIES OF POLYCRISTALLINE GE-METAL FILMSDUTTA V; NATH P; VANKAR VD et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 49; NO 1; PP. 379-385; ABS. GER; BIBL. 10 REF.Article

FORMES DE CROISSANCE DES CRISTAUX ET STRUCTURE D'UN JOINT D'INTERPHASESEMENOV VN; FROLOV AA.1978; KRISTALLOGRAFIJA; SUN; DA. 1978; VOL. 23; NO 5; PP. 1098-1099; BIBL. 6 REF.Article