OXIDATION OF THE SURFACE OF A15 NB₃GEIHARA H; KIMURA Y; YAMAZAKI M et al.1983; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1983; VOL. 27; NO 1; PP. 551-553; BIBL. 13 REF.Article

PROPERTIES OF NB₃GE VARIABLE-THICKNESS BRIDGESGOTO T; TANIHARA H.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 6; PP. 3291-3294; BIBL. 12 REF.Article

CHEMICAL VAPOR DEPOSITION OF SUPERCONDUCTORSBRAGINSKI AI.1981; INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION. 8/1981/GOUVIEUX; USA; PENNINGTON NJ: THE ELECTROCHEMICAL SOCIETY; DA. 1981; PP. 755-758; BIBL. 9 REF.Conference Paper

TUNNELING ALPHA ²F(OMEGA ) AS A FUNCTION OF COMPOSITION IN A15 NBGEKIHLSTROM KE; GEBALLE TH.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 7; PP. 4101-4104; BIBL. 15 REF.Article

Josephson properties of Nb₃Ge/oxide/Pb tunnel junctionsTANABE, K; ASANO, H; MICHIKAMI, O et al.Applied physics letters. 1984, Vol 44, Num 5, pp 559-561, issn 0003-6951Article

THERMODYNAMIC EQUILIBRIUM CALCULATIONS FOR THE CVD OF NB₃GEWEISS F; BERNARD C; FRUCHART R et al.1981; INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION. 8/1981/GOUVIEUX; USA; PENNINGTON NJ: THE ELECTROCHEMICAL SOCIETY; DA. 1981; PP. 44-53; BIBL. 21 REF.Conference Paper

Improved characteristics of Nb₃Ge tunnel junctions using sputter-deposited amorphous-silicon barrierKONISHI, H; KURIKI, S.Journal of applied physics. 1984, Vol 56, Num 4, pp 1039-1043, issn 0021-8979Article

SUPERCONDUCTING T_C'S OF SPUTTER-DEPOSITED NB-GE FILMS AND T_C NONUNIFORMITY WITHIN FILMS = TEMPERATURE DE TRANSITION SUPRACONDUCTRICE T_C DE COUCHES MINCES DE NB-GE DEPOSEES PAR PROJECTION ET NON-UNIFORMITE DE T_C A L'INTERIEUR DES COUCHESSUZUKI M; SUZUKI N; ANAYAMA T et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 6; PART. 1; PP. 840-844; BIBL. 12 REF.Article

INFLUENCES OF GAS FLOW ON CHEMICAL VAPOR DEPOSITION OF SUPERCONDUCTING NB-GE FILMS = INFLUENCES DE L'ECOULEMENT DE GAZ SUR LE DEPOT CHIMIQUE EN PHASE VAPEUR DE COUCHES MINCES SUPRACONDUCTRICES DE NB-GESUZUKI M; ONODERA H; ANAYAMA T et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 4; PP. 354-356; BIBL. 15 REF.Article

THE PROPERTIES OF ZIRCONIUM-DOPED NB₃SN-NB₃GE SOLID SOLUTIONSGUSEVA IA; SEROPEGIN YU D; SOKOLOUSKAYA EM et al.1982; J. LESS-COMMON MET.; ISSN 0022-5088; CHE; DA. 1982; VOL. 87; NO 1; PP. 109-115; BIBL. 12 REF.Article

IRRADIATIONS A BASSE TEMPERATURE DE L'IRIDIUM ET DU COMPOSE NB₃GE = IRRADIATION OF IRIDIUM AND OF THE COMPOUND NB₃GE AT LOW TEMPERATUREGELY MARIE HELENE.1982; ; FRA; DA. 1982; 68 F.; 30 CM; BIBL. DISSEM.; TH. 3E CYCLE: SCI./PARIS 6/1982Thesis

Thin film Nb₃Ge dc-SQUID with high operating temperatureROGALLA, H; DAVID, B; RÜHL, J et al.Journal of applied physics. 1984, Vol 55, Num 9, pp 3441-3443, issn 0021-8979Article

Nb-based A15 compound Josephson tunnel junctions fabricated using a CF₄ cleaning process: fabrication conditions and barrier propertiesTANABE, K; MICHIKAMI, O.Journal of applied physics. 1985, Vol 58, Num 9, pp 3519-3529, issn 0021-8979Article