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ON APPROXIMATION ERRORS INCURVED WHEN AVERAGED PROPERTIES SOLUTIONS ARE USED TO ESTIMATE REQUIRED HEAT RATES FOR SI-GE THERMOELECTRIC GENERATORSZELDIN B.1980; INTERNATIONAL CONFERENCE ON THERMOELECTRIC ENERGY CONVERSION. 3/1980/ARLINGTON TX; USA; NEW YORK: INSTITUTE OF ELECTRICAL AND ELECTRONIC ENGINEERS; DA. 1980; PP. 92-98; BIBL. 6 REF.Conference Paper

STRUCTURE DES ALLIAGES GE-SIPOLTAVTSEV YU G.1975; IZVEST. AKAD. NAUK S.S.S.R., METALLY; S.S.S.R.; DA. 1975; NO 4; PP. 226-228; BIBL. 8 REF.Article

SOME PRACTICAL REMARKS ON THE DESIGN OF EXPERIMENTAL SYSTEMS FOR EPITAXIAL GROWTH OF SI, GE AND SI-GE.AHARONI H; BAR LEV A.1974; VACUUM; G.B.; DA. 1974; VOL. 24; NO 2; PP. 89-93; BIBL. 7 REF.Article

PRECIPITATION EFFECTS IN HEAVILY DOPED N-TYPE SILICON-GERMANIUM ALLOYSSAVVIDES N; ROWE DM; SHUKLA VS et al.1980; INTERNATIONAL CONFERENCE ON THERMOELECTRIC ENERGY CONVERSION. 3/1980/ARLINGTON TX; USA; NEW YORK: INSTITUTE OF ELECTRICAL AND ELECTRONIC ENGINEERS; DA. 1980; PP. 57-59; BIBL. 12 REF.Conference Paper

THERMOELECTRIC ALLOYS, PHASE DIAGRAMS, AND IMPERFECTION CHEMISTRYTUOMI D.1980; INTERNATIONAL CONFERENCE ON THERMOELECTRIC ENERGY CONVERSION. 3/1980/ARLINGTON TX; USA; NEW YORK: INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS; DA. 1980; PP. 174-182; BIBL. 61 REF.Conference Paper

A ONE-DIMENSIONAL SIGE SUPERLATTICE GROWN BY UHV EPITAXY.KASPER E; HERZOG HJ; KIBBEL H et al.1975; APPL. PHYS.; GERM.; DA. 1975; VOL. 8; NO 3; PP. 199-205; BIBL. 23 REF.Article

PRECIPITATION OF PHOSPHORUS FROM SOLID SOLUTIONS IN SI-GE ALLOYS AND ITS EFFECT ON THERMOELECTRIC TRANSPORT PROPERTIESSAVVIDES N; ROWE DM.1981; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1981; VOL. 14; NO 4; PP. 723-732; BIBL. 21 REF.Article

THE EFFECT OF SHORT-TERM HEAT TREATMENT ON THE THERMOELECTRIC PROPERTIES OF HEAVILY DOPED N-TYPE SILICON GERMANIUM ALLOYSSHUKLA VS; ROWE DM.1981; APPL. ENERGY; ISSN 0306-2619; GBR; DA. 1981; VOL. 9; NO 2; PP. 131-137; BIBL. 17 REF.Article

MEASUREMENT OF THE LATTICE CONSTANT OF SI-GE HETEROEPITAXIAL LAYERS GROWN ON A SILICON SUBSTRATEHERZL AHARONI.1978; VACUUM; GBR; DA. 1978; VOL. 28; NO 12; PP. 571-578; BIBL. 10 REF.Conference Paper

A SURVEY OF INTERFACE STABILITY CRITERIA IN THE ELEMENTAL ALLOY SYSTEMS: GE-SI, BI-SB, AND SE-TE.DISMUKES JP; YIM WM.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 22; NO 4; PP. 287-294; BIBL. 40 REF.Article

A FIRST LOOK AT MODELS FOR LONG-TIME DEPENDENT CROSS-DOPING EFFECTS IN MODIFIED SIGE ALLOYSGUNTHER N.1982; INTERNATIONAL CONFERENCE ON THERMOELECTRIC ENERGY CONVERSION. 4/1982-03-10/ARLINGTON TX; USA; NEW YORK: IEEE; DA. 1982; PP. 104-114; BIBL. 17 REF.Conference Paper

THE EFFECT OF PHONON-GRAIN BOUNDARY SCATTERING ON THE LATTICE THERMAL CONDUCTIVITY AND THERMOELECTRIC CONVERSION EFFICIENCY OF HEAVILY DOPED FINE-GRAINED, HOT-PRESSED SILICON GERMANIUM ALLOYROWE DM; SHUKLA VS.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 12; PP. 7421-7426; BIBL. 33 REF.Article

THE THERMOELECTRIC TECHNOLOGY PROGRAM AT THE JET PROPULSION LABORATORYSTAPFER G.1980; INTERNATIONAL CONFERENCE ON THERMOELECTRIC ENERGY CONVERSION. 3/1980/ARLINGTON TX; USA; NEW YORK: INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS; DA. 1980; PP. 70-74; BIBL. 4 REF.Conference Paper

A HIGH PERFORMANCE SOLAR POWERED THERMOELECTRIC GENERATORROWE DM.1981; APPL. ENERGY; ISSN 0306-2619; GBR; DA. 1981; VOL. 8; NO 4; PP. 269-273; BIBL. 7 REF.Article

DARK CONDUCTIVITY AND PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS SI1-XGEX ALLOYSNGUYEN VAN DONG; TRAN HUU DANH; LENY JY et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 1; PP. 338-341; BIBL. 8 REF.Article

EFFECT OF GRAIN SIZE ON THE THERMOELECTRIC CONVERSION EFFICIENCY OF SEMICONDUCTOR ALLOYS AT HIGH TEMPERATUREROWE DM; BHANDARI EM.1980; APPL. ENERGY; ISSN 0306-2619; GBR; DA. 1980; VOL. 6; NO 5; PP. 347-351; BIBL. 14 REF.Article

DEVELOPMENT OF FINE GRAINED SILICON GERMANIUM ALLOY TECHNOLOGY AT UWIST, CARDIFFROWE DM.1982; INTERNATIONAL CONFERENCE ON THERMOELECTRIC ENERGY CONVERSION. 4/1982-03-10/ARLINGTON TX; USA; NEW YORK: IEEE; DA. 1982; PP. 96-103; BIBL. 54 REF.Conference Paper

Demonstration of laser-assisted epitaxial deposition of GexSi1-x alloys on single-crystal SiLOMBARDO, S; SMITH, P. M; UTTORMARK, M. J et al.Applied physics letters. 1991, Vol 58, Num 16, pp 1768-1770, issn 0003-6951Article

TWO-PHONON BOUND STATES IN IMPERFECT CRYSTALSBEHERA SN; SAMSUR S.1980; PRAMANA; ISSN 0304-4289; IND; DA. 1980; VOL. 15; NO 4; PP. 375-398; BIBL. 27 REF.Article

DEVICE FABRICATION ON EPITAXIAL SI-GE ALLOYSNEVIN JH; HALBERG LI.1982; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 6; PP. 1037-1047; BIBL. 12 REF.Article

ELABORATION EN BAIN FONDU ET ETUDE DE L'ALLIAGE GESI DU COTE RICHE EN GERMANIUM. REALISATION D'HOMOJONCTIONS N-P EN VUE DE LEUR UTILISATION DANS UNE PHOTOPILE SOLAIRE = PRODUCTION IN MOLTEN BATH AND STUDY OF GESI ALLOY ON GE RICH SIDE. REALIZATION OF N-P HOMOJUNCTIONS FOR USE IN A SOLAR CELLOUERTANI RACHID.1981; ; FRA; DA. 1981; 158 P.; 30 CM; BIBL. DISSEM.; TH. 3E CYCLE: PHYS. SOLIDES/MONTPELLIER 2/1981/624Thesis

HYDROGENATED A-SIXGE1-X: A POTENTIAL SOLAR CELL MATERIALCRETELLA MC; GREGORY JA.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 12; PP. 2850-2855; BIBL. 12 REF.Article

ELECTRON MOBILITY IN HEAVILY DOPED, HOT PRESSED SILICON GERMANIUM ALLOYSROWE DM.1980; APPL. ENERGY; ISSN 0306-2619; GBR; DA. 1980; VOL. 6; NO 6; PP. 455-462; BIBL. 14 REF.Article

SURFACE CHARACTERIZATION OF PHOTODEPOSITED SI/GE ALLOY FILMSMAINS GJ; SCHREINER JO; FIEISCH T et al.1981; J. PHYS. CHEM.; ISSN 0022-3654; USA; DA. 1981; VOL. 85; NO 26; PP. 4084-4089; BIBL. 32 REF.Article

THE STRUCTURE AND ELECTRICAL CHARACTERISTICS OF SI/GE HETEROJUNCTIONS. I: IMPERFECTIONS IN THE SI-GE HETEROEPITAXIAL SYSTEM OBTAINED BY DEPOSITION OF GERMANIUM FROM A MOLECULAR BEAMVASILEVSKAYA VN; KONAKOVA RV; OSADCHAYA NV et al.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 55; NO 2; PP. 229-234; BIBL. 17 REF.Article

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