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CINETIQUE DE L'HYDROCHLORATION DES ALLIAGES GE-SIGORBUNOV AI; BELYJ AP; KHATSERNOV MA et al.1976; ZH. FIZ. KHIM.; S.S.S.R.; DA. 1976; VOL. 50; NO 3; PP. 656-659; BIBL. 9 REF.Article

ION-BACKSCATTERING ANALYSIS OF TUNGSTEN FILMS ON HEAVILY DOPED SIGE = ANALYSE PAR RETRODIFFUSION D'IONS DE COUCHES MINCES DE W SUR SIGE FORTEMENT DOPEBORDERS JA; SWEET JN.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 9; PP. 3803-3808; BIBL. 20 REF.Serial Issue

THE MOBILITY CARRIERS AND THE MAGNETORESISTANCE OF GE-SI ALLOYSSHAHOVTSOVA SI; SHAHOVTSOVA VI; BELOKUROVA IN et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 41; NO 4; PP. 269-272; BIBL. 8 REF.Article

ELECTRON MOBILITY ENHANCEMENT IN EPITAXIAL MULTILAYER SI-SI1-XGEX ALLOY FILMS ON (100) SIMANASEVIT NM; GERGIS IS; JONES AB et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 5; PP. 464-466; BIBL. 16 REF.Article

SILICON-GERMANIUM ALLOYS AS HIGH-TEMPERATURE THERMOELECTRIC MATERIALSBHANDARI CM; ROWE DM.1980; CONTEMPOR. PHYS.; GBR; DA. 1980; VOL. 21; NO 3; PP. 219-242; BIBL. 1 P.Article

THE STRUCTURE AND ELECTRICAL CHARACTERISTICS OF SI/GE HETEROJUNCTIONS. II: THE ELECTRICAL CHARACTERISTICS OF SI/GE HETEROJUNCTIONSIVASTCHENKO VM; KONAKOVA RV; TKHORIK YA et al.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 76; NO 4; PP. 353-357; BIBL. 14 REF.Article

MASS SPECTROMETRIC DETERMINATION OF THE HEATS OF FORMATION AND ATOMIZATION ENERGIES OF THE MOLECULES GE2N AND GESINMUENOW DW.1974; J. CHEM. PHYS.; U.S.A.; DA. 1974; VOL. 60; NO 9; PP. 3382-3384; BIBL. 16 REF.Article

PRECIPITATION OF PHOSPHORUS FROM SOLID SOLUTIONS IN SI-GE ALLOYS AND ITS EFFECT ON THERMOELECTRIC TRANSPORT PROPERTIESSAVVIDES N; ROWE DM.1981; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1981; VOL. 14; NO 4; PP. 723-732; BIBL. 21 REF.Article

A SIMPLE MOLECULAR ORBITAL CALCULATION OF ESR G-VALUES FOR AMORPHOUS SI1-XCX, SI1-XGEX AND GE1-XCXISHII N; KUMEDA M; SHIMIZU T et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 41; NO 2; PP. 143-146; BIBL. 14 REF.Article

PRECISE DETERMINATION OF GAP ENERGIES FROM MODULATION SPECTRAHUMLICEK J; SCHMIDT E.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 107; NO 2; PP. K105-K108; BIBL. 3 REF.Article

ACOUSTOELECTRIC MEASUREMENT OF LOW CARRIER MOBILITIES IN HIGHLY RESISTIVE FILMSADLER R; JANES D; HUNSINGER BJ et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 2; PP. 102-103; BIBL. 7 REF.Article

STUDY OF ENERGY BAND PARAMETERS IN P-TYPE GE0.9SI0.1 ALLOYSTAKEDA K; MAEDA Y; OHTA E et al.1983; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1983; VOL. 115; NO 2; PP. 369-379; ABS. GER; BIBL. 33 REF.Article

Resonant tunneling through a Si/GexSi1-x/Si heterostructure on a GeSi buffer layerRHEE, S. S; PARK, J. S; KARUNASIRI, R. P. G et al.Applied physics letters. 1988, Vol 53, Num 3, pp 204-206, issn 0003-6951Article

Détermination de la vitesse de recombinaison à la surface de séparation d'hétérojonctions SixGe1-x-GaAsBORKOVSKAYA, O. YU; DMITRYK, N. L; KONAKOVA, R. V et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 3, pp 402-407, issn 0015-3222Article

Oxidation studies of SiGeLEGOUES, F. K; ROSENBERG, R; NGUYEN, T et al.Journal of applied physics. 1989, Vol 65, Num 4, pp 1724-1728, issn 0021-8979, 5 p.Article

Spectres de réflexion électrooptique de la lumière par des structures périodiques Ge1-xd1Sixd1-Ge1-xd2Sixd2 en couches ultramincesORLOV, L. K; KUZNETSOV, O. A; DROZDOV, YU. N et al.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 1, pp 118-122, issn 0015-3222Article

Graded-base Si/Si1-xGex/Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristicsSTURM, J. C; PRINZ, E. J; MAGEE, C. W et al.IEEE electron device letters. 1991, Vol 12, Num 6, pp 303-305, issn 0741-3106, 3 p.Article

Dislocation filters utilizing anisotropic dislocation glide motion in modulus-modulated multilayer structuresMAEDA, K; YAMASHITA, Y; FUKATSU, S et al.Journal of magnetism and magnetic materials. 1993, Vol 126, Num 1-3, pp 210-213, issn 0304-8853Conference Paper

Determination of the electrical conductivity of liquid Ge0.95Si0.05ROLIN, T. D; SZOFRAN, F. R.Journal of crystal growth. 1995, Vol 153, Num 1-2, pp 6-10, issn 0022-0248Article

Band structure calculations of GexSi1-xFERHAT, M; ZAOUI, A; KHELIFA, B et al.Solid state communications. 1994, Vol 91, Num 5, pp 407-411, issn 0038-1098Article

In situ ellipsometric control of Si1-x Gex/Si heterostructures grown by Chemical Beam EpitaxyBOUCAUD, P; GLOWASKI, F; FERRIEU, F et al.Thin solid films. 1994, Vol 248, Num 1, pp 1-5, issn 0040-6090Article

Electric subbands in Si/SiGe strained layer superlatticesZELLER, C; ABSTREITER, G.Zeitschrift für Physik. B, Condensed matter. 1986, Vol 64, Num 2, pp 137-143, issn 0722-3277Article

Electroreflectance spectroscopy of Si-GexSi1-x quantum-well structuresPEARSALL, T. P; POLLAK, F. H; BEAN, J. C et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 10, pp 6821-6830, issn 0163-1829Article

Electronic structure and impurity-limited electron mobility of silicon superlatticesSRINIVASAN KRISHNAMURTHY; MORIARTY, J. A.Physical review. B, Condensed matter. 1985, Vol 32, Num 2, pp 1027-1036, issn 0163-1829Article

Electrical characteristics of diodes fabricated in selective Si/Si1-xGex epitaxial layersKAMINS, T. I; NAUKA, K; JACOWITZ, R. D et al.Journal of electronic materials. 1992, Vol 21, Num 8, pp 817-824, issn 0361-5235Article

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