GENERATION OF INTERFACE STATES BY HOT HOLE INJECTION IN MOSFET'SGESCH H; LEBURTON JP; DORDA GE et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 5; PP. 913-918; BIBL. 26 REF.Article

EVIDENCE FOR MOBILITY DOMAINS IN (100) SILICON INVERSION LAYERS.EISELE I; GESCH H; DORDA G et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 20; NO 7; PP. 677-680; BIBL. 11 REF.Article

MANY-VALLEY INTERACTIONS IN N-TYPE SILICON INVERSION LAYERS.DORDA G; EISELE I; GESCH H et al.1978; PHYS. REV., B; U.S.A.; DA. 1978; VOL. 17; NO 4; PP. 1785-1798; BIBL. 35 REF.Article

EFFECTIVE MASSES IN (100) SILICON INVERSION LAYERS.EISELE I; GESCH H; DORDA G et al.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 22; NO 3; PP. 185-188; BIBL. 13 REF.Article

COMPARISON OF SHUBNIKOV-DE HAAS EFFECT AND CYCLOTRON RESONANCE ON SI(100) MOS TRANSISTORS UNDER UNIAXIAL STRESSGESCH H; DORDA G; STALLHOFER P et al.1979; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1979; VOL. 32; NO 7; PP. 543-546; BIBL. 14 REF.Article