ION IMPLANTATIONS IN SEMICONDUCTORS. II. DAMAGE PRODUCTION AND ANNEALINGGIBBONS JF.1972; PROC. I.E.E.E.; U.S.A.; DA. 1972; VOL. 60; NO 9; PP. 1062-1096; BIBL. 1 P.Serial Issue

INTEGRATED CIRCUIT PHYSICS AND TECHNOLOGYGIBBONS JF; SHOTT JD.1982; LECT. NOTES COMPUT. SCI.; ISSN 0302-9743; DEU; DA. 1982; NO 126; PP. 9-64; BIBL. 4 REF.Conference Paper

THE USE OF BEAM SHAPING TO ACHIEVE LARGE-GRAIN CW LASER-RECRYSTALLIZED POLYSILICON ON AMORPHOUS SUBSTRATESSTULTZ TJ; GIBBONS JF.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 6; PP. 498-500; BIBL. 6 REF.Article

ONE-GATE-WIDE CMOS INVERTER ON LASER-RECRYSTALLIZED POLYSILICONGIBBONS JF; LEE KF.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 6; PP. 117-118; BIBL. 6 REF.Article

THE EFFECT OF FREE-CARRIER ABSORPTION ON THE ANNEALING OF ION IMPLANTED SILICON BY PULSED LASERSLIETOILA A; GIBBONS JF.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 5; PP. 332-334; BIBL. 11 REF.Article

STUDY OF THE ENHANCED SOLUBILITY AND LATTICE LOCATION OF GOLD IMPURITIES IN A HEAVILY PHOSPHORUS-DIFFUSED LAYER OF SILICON.CHOU SL; GIBBONS JF.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 3; PP. 1197-1203; BIBL. 32 REF.Article

RESIDUAL STRESSES IN SPHEROIDALLY WEATHERED BOULDERS (ABSTRACT).GIBBONS JF; SCHLOFFMAN S.1969; GEOL. SOC. AMER., ABSTR. PROGRAMS; USA; 1969, NUM. 007Miscellaneous

A LASER-SCANNING APPARATUS FOR ANNEALING OF ION IMPLANTATION DAMAGE IN SEMICONDUCTORS.GAT A; GIBBONS JF.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 3; PP. 142-144; BIBL. 8 REF.Article

NEW MODEL FOR BORON DIFFUSION IN SILICON.ANDERSON JR; GIBBONS JF.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 4; PP. 184-186; BIBL. 11 REF.Article

CALCULATION OF SOLID-PHASE REACTION RATES INDUCED BY A SCANNING CW LASERGOLD RB; GIBBONS JF.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 2; PP. 1256-1258; BIBL. 13 REF.Article

TECTONICS OF THE EASTERN OZARKS AREA, SOUTH EASTERN MISSOURI.GIBBONS JF II.sdDISSERT. ABSTR. INTERNATION., B; U.S.A.; RESUME,1975, VOL. 35, NUM. 0011, P. 5489Serial Issue

STOICHIOMETRIC DISTURBANCES IN ION IMPLANTED COMPOUND SEMICONDUCTORSCHRISTEL LA; GIBBONS JF.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5050-5055; BIBL. 16 REF.Article

CONTROL OF ZINC DIFFUSIVITY IN GAAS_0.6P_0.4 BY MULTIPLE IMPLANTATION.STONEHAM EB; GIBBONS JF.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 12; PP. 5086-5091; BIBL. 19 REF.Article

SYSTEM-80 COMBUSTION ENGINEERING'S STANDARD 3800 MWT PWRBEVILACQUA F; GIBBONS JF.1974; COMBUSTION; U.S.A.; DA. 1974; VOL. 45; NO 12; PP. 14-25; BIBL. 8 REF.Article

OXIDATION KINETICS OF LASER FORMED MOSI₂ ON POLYCRYSTALLINE SILICONWAKITA AS; SIGMON TW; GIBBONS JF et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2711-2715; BIBL. 12 REF.Article

AN APPLICATION OF THE BOLTZMANN TRANSPORT EQUATION TO ION RANGE AND DAMAGE DISTRIBUTIONS IN MULTILAYERED TARGETSCHRISTEL LA; GIBBONS JF; MYLROIE S et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 12; PP. 6176-6182; BIBL. 22 REF.Article

THE SOLID SOLUBILITY AND THERMAL BEHAVIOR OF METASTABLE CONCENTRATIONS OF AS IN SILEITOILA A; GIBBONS JF; SIGMON TW et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 9; PP. 765-768; BIBL. 11 REF.Article

DEFECT LUMINESCENCE IN CW LASER-ANNEALED SILICONSTREET RA; JOHNSON NM; GIBBONS JF et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 12; PP. 8201-8203; BIBL. 15 REF.Article

METASTABLE ⁷⁵AS CONCENTRATIONS FORMED BY SCANNED CW E-BEAM ANNEALING OF ⁷⁵AS-IMPLANTED SILICONREGOLINI JL; SIGMON TW; GIBBONS JF et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 35; NO 2; PP. 114-116; BIBL. 10 REF.Article

THIN FILM MOSFET'S FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICONLEE KF; GIBBONS JF; SARASWAT KC et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 35; NO 2; PP. 173-175; BIBL. 6 REF.Article

A DOUBLE-LAYERED ENCAPSULANT FOR ANNEALING ION-IMPLANTED GAAS UP TO 1100^OC.LIDOW A; GIBBONS JF; MAGEE T et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 3; PP. 158-161; BIBL. 9 REF.Article

THE RATE OF CW LASER INDUCED SOLID PHASE EPITAXIAL REGROWTH OF AMORPHOUS SILICONLIETOILA A; GOLD RB; GIBBONS JF et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 10; PP. 810-812; BIBL. 11 REF.Article

ELECTRONIC DEFECT LEVELS IN SELF IMPLANTED CW LASER-ANNEALED SILICONJOHNSON NM; GOLD RB; GIBBONS JF et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 10; PP. 704-706; BIBL. 13 REF.Article

A STUDY OF THE MECHANISM OF CW LASER ANNEALING OF ARSENIC-IMPLANTED SILICONGAT A; LIETOILA A; GIBBONS JF et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 4; PP. 2926-2929; BIBL. 14 REF.Article

SOLID-PHASE EPITAXIAL REGROWTH OF ION-IMPLANTED LAYERS IN GAASNISSIM YI; CHRISTEL LA; SIGMON TW et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 8; PP. 598-600; BIBL. 6 REF.Article