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FORMATION OF HEAVILY DOPED N-TYPE LAYERS IN GAAS BY MULTIPLE ION IMPLANTATIONSTONEHAM EB; PATTERSON GA; GLADSTONE JM et al.1980; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; VOL. 9; NO 2; PP. 371-383; BIBL. 8 REF.Article

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