A DIRECT COMPARISON BETWEEN SEM(EBIC) AND HVEM IMAGES OF CRYSTAL DEFECTS IN SEMICONDUCTORS.BLUMTRITT H; GLEICHMANN R.1977; ULTRAMICROSCOPY; NETHERL.; DA. 1977; VOL. 2; NO 4; PP. 405-408; BIBL. 9 REF.Article

INTERPRETATION OF THE EBIC CONTRAST OF DISLOCATIONS IN SILICONPASEMAN L; BLUMTRITT H; GLEICHMANN R et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 70; NO 1; PP. 197-209; ABS. GER; BIBL. 21 REF.Article

COPPER PRECIPITATION IN LONG-TIME DIFFUSED SILICONGLEICHMANN R; MOHR U; JEGERLEHNER K et al.1983; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1983; VOL. 18; NO 3; PP. 297-305; ABS. GER; BIBL. 6 REF.Article

On the nature of plastic deformation generated by hydrostatic pressure in silicon single crystalsJUNG, J; GLEICHMANN, R.Journal of materials science. 1984, Vol 19, Num 10, pp 3399-3406, issn 0022-2461Article

PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICONTEMPELHOFF K; SPIEGELBERG F; GLEICHMANN R et al.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 56; NO 1; PP. 213-223; ABS. GER; BIBL. 21 REF.Article

On the influence of point defects in the LOCOS processKATCKI, J; GLEICHMANN, R; ŁYSKO, J et al.Physica status solidi. A. Applied research. 1987, Vol 101, Num 2, pp 381-389, issn 0031-8965Article

Process-induced defects in solar cell siliconGLEICHMANN, R; CUNNINGHAM, B; AST, D. G et al.Journal of applied physics. 1985, Vol 58, Num 1, pp 223-229, issn 0021-8979Article

Recovery of edge-defined film-fed grown silicon. Dislocation twin boundary interaction and mechanisms for twin-induced grain boundary formationGLEICHMANN, R; VAUDIN, M. D; AST, D. G et al.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1985, Vol 51, Num 3, pp 449-467, issn 0141-8610Article

Structural and electrical properties of n-type bulk gallium arsenide grown from non-stoichiometric meltsFORNARI, R; FRIGERI, C; GLEICHMANN, R et al.Journal of electronic materials. 1989, Vol 18, Num 2, pp 185-189, issn 0361-5235, 5 p., IArticle

Copper precipitation in long-time processed transistor samples = Kupferausscheidungen in langzeitbehandelten TransistorprobenGLEICHMANN, R; BREITENSTEIN, O; MOHR, U et al.Crystal research and technology (1979). 1983, Vol 18, Num 9, pp 1115-1123, issn 0232-1300Article

New morphological types of CuSi precipitates in silicon and their electrical effects = Neue morphologische Typen von CuSi-Ausscheidungen in Silizium und ihre elektrischen EffekteGLEICHMANN, R; BLUMTRITT, H; HEYDENREICH, J et al.Physica status solidi. A. Applied research. 1983, Vol 78, Num 2, pp 527-538, issn 0031-8965Article

Relationship between dislocation generation, vapour phase supersaturation and growth rate in InP layers obtained by vapour phase epitaxyFRIGERI, C; GLEICHMANN, R; PELOSI, C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1991, Vol 10, Num 3, pp 197-207Article

Copper precipitation in long-time processed transistor samplesGLEICHMANN, R; BREITENSTEIN, O; MOHR, U et al.Crystal research and technology (1979). 1983, Vol 18, Num 9, pp 1115-1123, issn 0232-1300Article

New morphological types of CuSi precipitates in silicon and their electrical effectsGLEICHMANN, R; BLUMTRITT, H; HEYDENREICH, J et al.Physica status solidi. A. Applied research. 1983, Vol 78, Num 2, pp 527-538, issn 0031-8965Article

Superplastic deformation of an ultrafine grained intermetallic alloy prepared by crystallization of a metallic glass = Superplastische Verformung einer ultrafeinkoernigen intermetallischen Legierung, die durch Kristallisation eines metallischen Glases hergestellt wurdeREUSSWIG, S; GLEICHMANN, R; ZIELINSKI, P.G et al.Acta metallurgica. 1984, Vol 32, Num 9, pp 1553-1560, issn 0001-6160Article

Electrical homogeneity of semi-insulating LEC GaAs improved by post-growth annealingMENNIGER, H; BEER, M; GLEICHMANN, R et al.Physica status solidi. A. Applied research. 1990, Vol 121, Num 1, pp 95-103, issn 0031-8965, 9 p.Article

Stacking fault pyramids, island growth and misfiet dislocations in In_xGa_1-xAs/InP heterostructures grown by vapour phase epitaxyFRIGERI, C; ATTOLINI, G; PELOSI, C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1991, Vol 9, Num 1-3, pp 115-119Conference Paper

Crystal defects in InGaAlAs layers grown on InP substrates by molecular beam epitaxyBOCCHI, C; FERRARI, C; FRANZOSI, P et al.Journal of crystal growth. 1990, Vol 106, Num 4, pp 665-672, issn 0022-0248Article