IMPURETES DANS LE GERMANIUM, LE SILICIUM ET L'ARSENIURE DE GALLIUM (CARACTERISTIQUES DE RECOMBINAISON)GLINCHUK KD.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 7; PP. 51-60; BIBL. 2 P. 1/2Serial Issue

EFFECT OF THE 0.94, 1.0, 1.2, AND 1.3 EV RADIATIVE CENTRES ON THE INTRINSIC LUMINESCENCE INTENSITY IN N-GAAS.GLINCHUK KD; PROKHOROVICH AV.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 44; NO 2; PP. 777-785; ABS. RUSSE; BIBL. 15 REF.Article

TEMPERATURE QUENCHING OF THE COPPER-INDUCED 1.35 EV EMISSION BAND IN P-GAAS.GLINCHUK KD; PROKHOROVICH AV.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 25; NO 1; PP. 323-327; ABS. RUSSE; BIBL. 8 REF.Article

NON-TRIVIAL ANNEALING-INDUCED INCREASE OF THE NEAR-INTRINSIC EMISSION INTENSITY IN GAMMA -IRRADIATED GAASGLINCHUK KD; LUKAT K.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 71; NO 2; PP. K187-K190; BIBL. 6 REF.Article

CARACTERISTIQUES DE RECOMBINAISON DU GE ET SI UTILISES DANS L'INDUSTRIE DE LA FABRICATION DE DISPOSITIFS A SEMICONDUCTEUR (SYNTHESE)GLINCHUK KD; LITOVCHENKO MN.1978; POLUPROVODN. TEKH. MIKROELEKTRON.; UKR; DA. 1978; NO 28; PP. 3-22; BIBL. 121 REF.Article

THE ROLE OF DIFFERENT LOCAL CENTRES IN THE DETERMINATION OF THE CONCENTRATION DEPENDENCE OF THE INTRINSIC EMISSION INTENSITY IN N-TYPE GAAS.GLINCHUK KD; PROKHOROVICH AV.1978; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1978; VOL. 45; NO 2; PP. K91-K94; BIBL. 10 REF.Article

THE CHARACTERISTICS OF THE COPPER-INDUCED 1.35 EV EMISSION BAND IN P-GAAS.GLINCHUK KD; PROKHOROVICH AV.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 29; NO 1; PP. 339-345; ABS. RUSSE; BIBL. 9 REF.Article

INERTIE DE PHOTORESISTANCE SI(ZNGLINCHUK KD; RODIONOV VE.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 7; PP. 27-31; BIBL. 7 REF.Serial Issue

COMPARISON OF IRRADIATION- AND ANNEALING-INDUCED CHANGES OF THE INTRINSIC EMISSION INTENSITY IN ELECTRON-BOMBARDED UNDEFORMED AND PLASTICALLY DEFORMED GAASGLINCHUK KD; PROKHOROVICH AV; ZAYATS NS et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 73; NO 2; PP. K267-K270; BIBL. 6 REF.Article

NON-TRIVIAL EXCITATION DEPENDENCE OF THE KINETICS OF EXTRINSIC LUMINESCENCE DECAY IN GAASGLINCHUK KD; LUKAT K; PROKHOROVICH AV et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 64; NO 2; PP. K139-K143; BIBL. 3 REF.Article

CANAUX DE RECOMBINAISON RAPIDE DANS L'ARSENIURE DE GALLIUMGLINCHUK KD; LITOVCHENKO NM; RODIONOV VE et al.1974; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1974; VOL. 8; NO 12; PP. 2295-2301; BIBL. 10 REF.Article

STUDY OF NON-LINEAR EXTRINSIC LUMINESCENCE IN GAAS. II: THE ROLE OF AUGER RECOMBINATIONGLINCHUK KD; PROKHOROVICH AV; VOVNENKO VI et al.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 51; NO 2; PP. 645-655; ABS. RUS; BIBL. 16 REF.Article

STUDY OF NON-LINEAR EXTRINSIC LUMINESCENCE IN GAAS. III: SUBLINEAR EMISSION DUE TO AUGER TRANSITIONS IN RADIATIVE CENTRESGLINCHUK KD; PROKHOROVICH AV; VOVNENKO VI et al.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 54; NO 1; PP. 121-128; ABS. RUS; BIBL. 15 REF.Article

LUMINESCENCE DU GAAS SOUS EXCITATION LASERGLINCHUK KD; LINNIK LF; RODIONOV VE et al.1974; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1974; NO 16; PP. 78-81; BIBL. 8 REF.Article

EFFECT OF ELECTRON IRRADIATION ON RECOMBINATION CHARACTERISTICS OF DEEP RADIATIVE CENTRES IN GAASGLINCHUK KD; LUKAT K; VOVNENKO VI et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 69; NO 1; PP. K43-K47; BIBL. 14 REF.Article

INTERACTION OF COPPER ATOMS WITH RADIATION DEFECTS IN GALLIUM ARSENIDEGLINCHUK KD; LUKAT K; VOVNENKO VI et al.1982; PHYS. STATUS SOLIDI (A), APPL. RES.; DDR; DA. 1982-02; VOL. 69; NO 2; PP. 521-525; BIBL. 10 REF.Article

PROPRIETES DE RECOMBINAISON DU SILICIUM CONTENANT DE L'OXYGENEGLINCHUK KD; IL'CHISHIN VA; LITOVCHENKO NM et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 10; PP. 1927-1931; BIBL. 14 REF.Article

CARACTERISTIQUES DE LA BANDE DE LUMINESCENCE AVEC HNU _M=0,93-0,99 EV DANS GAAS NVOVNENKO VI; GLINCHUK KD; PROKHOROVICH AV et al.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 6; PP. 1150-1153; BIBL. 11 REF.Article

SCHEMA DES TRANSITIONS DE RECOMBINAISON PROVOQUANT LES BANDES D'EMISSION A 1,0 EV, 1,2 ET 1,3 EV DANS GAAS NGLINCHUK KD; PROKHOROVICH AV; RODIONOV VE et al.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 1; PP. 35-39; BIBL. 10 REF.Article

VARIATION DU RENDEMENT QUANTIQUE INTERNE DE LUMINESCENCE DE CENTRES PROFONDS DANS GAAS PAR IRRADIATION GAMMAVOVNENKO VI; GLINCHUK KD; PROKHOROVICH AV et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 6; PP. 1156-1159; BIBL. 12 REF.Article

EFFECT OF QUENCHING RATE AND ANNEALING ON THE CONCENTRATION OF QUENCHED-IN RECOMBINATION CENTRES IN HEAT TREATED SILICON.GLINCHUK KD; LITOVCHENKO NM; MERKER R et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 2; PP. K157-K160; BIBL. 11 REF.Article

THE INTERNAL RADIATIVE EFFICIENCY AND THE MECHANISM OF TEMPERATURE QUENCHING OF THE 1.03, 1.20, AND 1.30 EV EMISSION BANDS IN N-GAAS.GLINCHUK KD; PROKHOROVICH AV; VOVNENKO VI et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 34; NO 2; PP. 777-786; ABS. RUSSE; BIBL. 12 REF.Article

STUDY OF NON-LINEAR EXTRINSIC LUMINESCENCE IN GAASGLINCHUK KD; PROKHOROVICH AV; RODIONOV VE et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 48; NO 2; PP. 593-602; ABS. RUS; BIBL. 16 REF.Article

EFFECT OF HEAT TREATMENT ON THE 0,93, 1.0, AND 1.28 EV LUMINESCENCE BANDS IN N-GAASVOROBKALO FM; GLINCHUK KD; PROKHOROVICH AV et al.1973; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1973; VOL. 15; NO 1; PP. 287-293; ABS. RUSSE; BIBL. 13 REF.Serial Issue

ETUDE DE LA DESTRUCTION DES SEMICONDUCTEURS PAR UN RAYONNEMENT LASERVASILEVSKAYA VN; GLINCHUK KD; LINNIK LF et al.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 8; PP. 44-50; BIBL. 21 REF.Serial Issue