Secondary ion emission from transition metals during exposure to oxygen and subsequent sputtering = L'émission d'ions secondaires à partir de métaux de transition au cours de l'exposition à l'oxygène et les pulvérisations consécutivesGNASER, H.Applications of surface science. 1984, Vol 18, Num 4, pp 389-400, issn 0378-5963Article

Isotope effects in secondary-ion emission = Effets isotopiques dans l'émission d'ions secondairesGNASER, H.Radiation effects. 1989, Vol 109, Num 1-4, pp 265-271, issn 0033-7579Conference Paper

Negative secondary ion emission from oxidized surfaces = Negative Sekundaerionenemission aus oxidierten OberflaechenGNASER, H.Surface science. 1984, Vol 138, Num 2/3, pp 561-569, issn 0039-6028Article

COMPARISON OF SECONDARY ION YIELD DATA FROM AMORPHOUS AND POLYCRYSTALLINE IRON-BASED ALLOYS = COMPARAISON DES DONNEES SUR LE RENDEMENT EN ION SECONDAIRE A PARTIR DES ALLIAGES A BASE DE FER, AMORPHES ET POLYCRISTALLINSRIEDEL M; GNASER H; RUEDENAUER FG et al.1982; ANAL. CHEM. (WASH.); ISSN 0003-2700; USA; DA. 1982; VOL. 54; NO 2; PP. 290-294; BIBL. 34 REF.Article

Significance of isotope effects for secondary-ion emission modelsGNASER, H; HUTCHEON, I. D.Physical review. B, Condensed matter. 1988, Vol 38, Num 16, pp 11112-11117, issn 0163-1829, part AArticle

Preferential sputtering of isotopes: fluence and emission-angle dependenceGNASER, H; OECHSNER, H.Physical review letters. 1989, Vol 63, Num 24, pp 2673-2676, issn 0031-9007, 4 p.Article

The influence of polarizability on the emission of sputtered molecular ionsGNASER, H; OECHSNER, H.Surface science. 1994, Vol 302, Num 1-2, pp L289-L292, issn 0039-6028Article

Yields and composition changes in low-energy sputtering of binary alloys : experiments and computer simulationsGNASER, H; OECHSNER, H.Physical review. B, Condensed matter. 1993, Vol 47, Num 21, pp 14093-14102, issn 0163-1829Article

Novel detection scheme for the analysis of hydrogen and helium by secondary ion mass spectrometryGNASER, H; OECHSNER, H.Surface and interface analysis. 1991, Vol 17, Num 9, pp 646-649, issn 0142-2421Article

Symmetric and asymmetric collision effects on the formation of singly and doubly-charged ions in sputtering processMONDAL, S; GNASER, H; CHAKRABORTY, P et al.The European physical journal. D, Atomic, molecular and optical physics (Print). 2012, Vol 66, Num 7, issn 1434-6060, 197.1-197.6Article

Modification of crystalline semiconductor surfaces by low-energy Ar⁺ bombardment : Si(111) and Ge(100)BOCK, W; GNASER, H; OECHSNER, H et al.Surface science. 1993, Vol 282, Num 3, pp 333-341, issn 0039-6028Article

SIMS depth profile analysis using MCs⁺ molecular ionsGNASER, H; OECHSNER, H.Fresenius' journal of analytical chemistry. 1991, Vol 341, Num 1-2, pp 54-56, issn 0937-0633Conference Paper

Analysis of solids with a secondary-neutral microprobe based on electron-gas post-ionizationBIECK, W; GNASER, H; OECHSNER, H et al.Fresenius' journal of analytical chemistry. 1995, Vol 353, Num 3-4, pp 324-328, issn 0937-0633Conference Paper

Analysis of solids by secondary ion and sputtered neutral mass spectrometryGNASER, H; FLEISCHHAUER, J; HOFER, W. O et al.Applied physics. A, Solids and surfaces. 1985, Vol 37, Num 4, pp 211-220, issn 0721-7250Article

Parts-per-billion detection with electron-gas secondary-neutral mass spectrometryGNASER, H; OECHSNER, H; SCHNEIDER, H.-J et al.Applied surface science. 1997, Vol 120, Num 3-4, pp 220-224, issn 0169-4332Article

Secondary-neutral and secondary-ion mass spectrometry analysis of TiN-based hard coatings : an assessment of quantification proceduresBOCK, W; GNASER, H; OECHSNER, H et al.Analytica chimica acta. 1994, Vol 297, Num 1-2, pp 277-283, issn 0003-2670Article

Self-pulsing emission of a liquid metal ion sourceWERNER, F; GNASER, H; SCHOLTES, J et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1991, Vol 9, Num 5, pp 2678-2682, issn 0734-2101Article

On the chemical sputtering of oxygen-exposed molybdenum = Ueber das chemische Sputtern von Sauerstoff ausgesetztem MolydbaenSAIDOH, M; GNASER, H; HOFER, W.O et al.Applied physics. A, Solids and surfaces. 1986, Vol 40, Num 4, pp 197-202, issn 0721-7250Article

Carbon depth distribution in spin-on silicon dioxide filmsGAPONENKO, N. V; GNASER, H; BECKER, P et al.Thin solid films. 1995, Vol 261, Num 1-2, pp 186-191, issn 0040-6090Article

Spin-on silicon dioxide films on indium antimonyGAPONENKO, N. V; BORISENKO, V. E; MILESHKO, L. P et al.Thin solid films. 1993, Vol 223, Num 1, pp 122-128, issn 0040-6090Article

Phase transformation and particle growth in nanocrystalline anatase TiO₂ films analyzed by X-ray diffraction and Raman spectroscopyORENDORZ, A; BRODYANSKI, A; LOSCH, J et al.Surface science. 2007, Vol 601, Num 18, pp 4390-4394, issn 0039-6028, 5 p.Conference Paper

Optical and structural characterization of erbium-doped TiO₂xerogel films processed on porous anodic aluminaGAPONENKO, N. V; SERGEEV, O. V; STEPANOVA, E. A et al.Journal of the Electrochemical Society. 2001, Vol 148, Num 2, pp H13-H16, issn 0013-4651Article

MPCVD diamond deposition on bias pretreated porous siliconSPITZL, R; RAIKO, V; HEIDERHOFF, R et al.Diamond and related materials. 1995, Vol 4, Num 5-6, pp 563-568, issn 0925-9635Conference Paper

Erbium-doped titania xerogel films processed on porous anodic aluminaSERGEEV, O. V; GAPONENKO, N. V; STEPANOVA, E. A et al.International symposium on aluminium surface science and technology. 2000, pp 548-552Conference Paper

Strong 1.54 μm luminescence from erbium-doped porous siliconDOROFEEV, A; BACHILO, E; BOCK, W et al.Thin solid films. 1996, Vol 276, Num 1-2, pp 171-174, issn 0040-6090Conference Paper