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Analysis of Ge segregation in Si using a simultaneous growth and exchange modelGODBEY, D. J; ANCONA, M. G.Surface science. 1998, Vol 395, Num 1, pp 60-68, issn 0039-6028Article

Fabrication of bond and etch-back silicon on insulator using a strained Si0.7Ge0.3 layer as an etch stopGODBEY, D. J; TWIGG, M. E; HUGHES, H. L et al.Journal of the Electrochemical Society. 1990, Vol 137, Num 10, pp 3219-3223, issn 0013-4651Article

Sb surface segregation and doping in Si(100) grown at reduced temperature by molecular beam epitaxyHOBART, K. D; GODBEY, D. J; THOMPSON, P. E et al.Applied physics letters. 1993, Vol 63, Num 10, pp 1381-1383, issn 0003-6951Article

Optically detected magnetic resonance of sharp luminescence from Si/Si1-xGex superlatticesKENNEDY, T. A; GLASER, E. R; GODBEY, D. J et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 3, pp 1154-1158, issn 1071-1023Conference Paper

Selective removal of Si1-xGex from (100) Si using HNO3 and HFGODBEY, D. J; KRIST, A. H; HOBART, K. D et al.Journal of the Electrochemical Society. 1992, Vol 139, Num 10, pp 2943-2947, issn 0013-4651Article

Near band-edge photoluminescence from Si1-xGex/Si superlattices grown by molecular-beam epitaxySTEINER, T. D; HENGEHOLD, R. L; YEO, Y. K et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 2, pp 924-926, issn 0734-211XConference Paper

Stress and its effect on the interdiffusion in Si1-xGex/Si superlatticesPROKES, S. M; GLEMBOCKI, O. J; GODBEY, D. J et al.Applied physics letters. 1992, Vol 60, Num 9, pp 1087-1089, issn 0003-6951Article

Selective removal of a Si0.7Ge0.3 layer from Si(100)KRIST, A. H; GODBEY, D. J; GREEN, N. P et al.Applied physics letters. 1991, Vol 58, Num 17, pp 1899-1901, issn 0003-6951Article

MBE-grown germanium on sapphire (1102)GODBEY, D. J; QADRI, S. B; TWIGG, M. E et al.Thin solid films. 1990, Vol 184, pp 379-386, issn 0040-6090, 8 p.Conference Paper

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