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Analysis of new lateral insulated gate bipolar transistor structures for power applicationsGODIGNON, P; FERNANDEZ, J; HIDALGO, S et al.Microelectronics journal. 1993, Vol 24, Num 1-2, pp 87-97, issn 0959-8324Article

Temperature effects on the ruggedness of SiC Schottky diodes under surge currentLEON, J; PERPINA, X; BANU, V et al.Microelectronics and reliability. 2014, Vol 54, Num 9-10, pp 2207-2212, issn 0026-2714, 6 p.Conference Paper

Interfacial properties of thermally oxidized Ta₂Si on SiPKREZ-TOMAS, A; JENNINGS, M. R; MAWBY, P. A et al.Surface and interface analysis. 2008, Vol 40, Num 8, pp 1164-1167, issn 0142-2421, 4 p.Article

Two-dimensional dopant imaging of silicon carbide devices by secondary electron potential contrastBUZZO, M; CIAPPA, M; MILLAN, J et al.Microelectronic engineering. 2007, Vol 84, Num 3, pp 413-418, issn 0167-9317, 6 p.Conference Paper

Very low R_ON measured on 4H-SiC accu-MOSFET high power deviceNALLET, F; GODIGNON, P; PLANSON, D et al.International symposium on power semiconductor devices & ICS. 2002, pp 209-212, isbn 0-7803-7318-9, 4 p.Conference Paper

Double gate MOS-thyristor devices with and without forward bias safe operating area capability : the insulated base MOS-controlled thyristor and the dual MOS-gated thyristorFLORES, D; GODIGNON, P; JORDA, X et al.Microelectronics journal. 1999, Vol 30, Num 6, pp 591-597, issn 0959-8324Conference Paper

Numerical simulation of the insulated base MOS-controlled thyristorFLORES, D; GODIGNON, P; VELLVEHI, M et al.Microelectronics journal. 1996, Vol 27, Num 2-3, pp 177-180, issn 0959-8324Article

La modernisation des administrations financièresBARILARI, A; PARENT, B; ROY, J.-M et al.Revue française de finances publiques. 1996, Num 54, pp 7-138, issn 0294-0833Serial Issue

CVD oriented growth of carbon nanotubes using AlPO₄-5 and L type zeolitesMARTIN, I; RIUS, G; ATIENZAR, P et al.Microelectronic engineering. 2008, Vol 85, Num 5-6, pp 1202-1205, issn 0167-9317, 4 p.Conference Paper

Direct measurement of self-heating effects at the drift region of 600V PT-IGBTsPERPINA, X; JORDA, X; GODIGNON, P et al.International conference on microelectronics. 2004, isbn 0-7803-8166-1, 2Vol, vol 1, 149-152Conference Paper

Self-heating experimental study of 600 V PT-IGBTs under low dissipation energiesPERPINA, X; JORDA, X; MESTRES, N et al.Microelectronics journal. 2004, Vol 35, Num 10, pp 841-847, issn 0959-8324, 7 p.Conference Paper

Experimental and simulation results on the switching behaviour of lateral insulated gate bipolar transistor structuresVELLVEHI, M; JORDA, X; GODIGNON, P et al.Microelectronics journal. 1999, Vol 30, Num 6, pp 583-589, issn 0959-8324Conference Paper

A simplified low-voltage smart power technologyBERTA, F; FERNANDEZ, J; HIDALGO, S et al.IEEE electron device letters. 1991, Vol 12, Num 9, pp 465-467, issn 0741-3106Article

Enhanced power cycling capability of SiC Schottky diodes using press pack contactsBANU, V; GODIGNON, P; PERPINA, X et al.Microelectronics and reliability. 2012, Vol 52, Num 9-10, pp 2250-2255, issn 0026-2714, 6 p.Conference Paper

SiC MOSFETs with thermally oxidized Ta₂Si stacked on SiO₂ as high-k gate insulatorPEREZ-TOMAS, A; JENNINGS, M. R; GAMMON, P. M et al.Microelectronic engineering. 2008, Vol 85, Num 4, pp 704-709, issn 0167-9317, 6 p.Article

Schottky versus bipolar 3.3 kV SiC diodesPEREZ-TOMAS, A; BROSSELARD, P; HASSAN, J et al.Semiconductor science and technology. 2008, Vol 23, Num 12, issn 0268-1242, 125004.1-125004.7Article

Analysis of 1.2 kV JBS rectifiers fabricated in 4H-SiCPEREZ, R; MESTRES, N; VELLVEHI, M et al.Semiconductor science and technology. 2006, Vol 21, Num 5, pp 670-676, issn 0268-1242, 7 p.Article

Full wafer size investigation of N⁺ and P⁺ co-implanted layers in 4H-SiCBLANQUE, S; LYONNET, J; PEREZ, R et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 4, pp 698-704, issn 0031-8965, 7 p.Conference Paper

Estudio de puertas catalíticas en sensores de gas en tecnología de SiC = Catalitic gates for gas sensors based on SiC technologyCASALS, O; HAFFAR, M; BARCONES, B et al.Boletín de la Sociedad Española de Cerámica y Vidrio. 2004, Vol 43, Num 2, pp 383-385, issn 0366-3175, 3 p.Conference Paper

Optimisation of junction termination extension for the development of a 2000 V planar 4H-SiC diodePEREZ, R; MESTRES, N; JORDA, X et al.Diamond and related materials. 2003, Vol 12, Num 3-7, pp 1231-1235, issn 0925-9635, 5 p.Conference Paper

An improved technology of 6H-SiC power diodesBADILA, M; BREZEANU, G; DILIMOT, G et al.Microelectronics journal. 2000, Vol 31, Num 11-12, pp 955-962, issn 0959-8324Conference Paper

Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxySAVKINA, N. S; LEBEDEV, A. A; GODIGNON, P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 77, Num 1, pp 50-54, issn 0921-5107Article

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Wafer scale and reliability investigation of thin HfO₂·AlGaN/GaN MIS-HEMTsFONTSERE, A; PEREZ-TOMAS, A; GODIGNON, P et al.Microelectronics and reliability. 2012, Vol 52, Num 9-10, pp 2220-2223, issn 0026-2714, 4 p.Conference Paper