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au.\*:("GOLD RB")

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FURNACE-TECHNOLOGY LETS YOU FORGE WITH TWO-FIFTHS THE FUEL.GOLD RB.1977; PRECIS METAL; U.S.A.; DA. 1977; VOL. 35; NO 9; PP. 23-28Article

TRANSPORTATION: THE TURNING POINTGOLD RB.1976; PRECIS. METAL; U.S.A.; DA. 1976; VOL. 34; NO 2; PP. 17-21Article

CALCULATION OF SOLID-PHASE REACTION RATES INDUCED BY A SCANNING CW LASERGOLD RB; GIBBONS JF.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 2; PP. 1256-1258; BIBL. 13 REF.Article

THE RATE OF CW LASER INDUCED SOLID PHASE EPITAXIAL REGROWTH OF AMORPHOUS SILICONLIETOILA A; GOLD RB; GIBBONS JF et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 10; PP. 810-812; BIBL. 11 REF.Article

ELECTRONIC DEFECT LEVELS IN SELF IMPLANTED CW LASER-ANNEALED SILICONJOHNSON NM; GOLD RB; GIBBONS JF et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 10; PP. 704-706; BIBL. 13 REF.Article

APPLICATION OF THE TWO-WAY BALANCED AMPLIFIER CONCEPT TO WIDE-BANDE POWER AMPLIFICATION USING GAAS MESFET'SNICLAS KB; WILSER WT; GOLD RB et al.1980; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1980; VOL. 28; NO 3; PP. 172-179; BIBL. 15 REF.Article

CONSTANT-CAPACITANCE DLTS MEASUREMENT OF DEFECT-DENSITY PROFILES IN SEMICONDUCTORSJOHNSON NM; BARTELINK DJ; GOLD RB et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 7; PP. 4828-4833; BIBL. 23 REF.Article

TEMPERATURE DISTRIBUTIONS PRODUCED IN SEMICONDUCTORS BY A SCANNING ELLIPTICAL OR CIRCULAR CW LASER BEAMNISSIM YI; LIETOILA A; GOLD RB et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 274-279; BIBL. 12 REF.Article

THE MATCHED FEEDBACK AMPLIFIER: ULTRAWIDE-BAND MICROWAVE AMPLIFICATION WITH GAAS MESFET'SNICLAS KB; WILSER WT; GOLD RB et al.1980; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1980; VOL. 28; NO 4; PP. 285-294; BIBL. 7 REF.Article

A 12-18 GHZ MEDIUM-POWER GAAS MESFET AMPLIFIERNICLAS KB; GOLD RB; WILSER WT et al.1978; I.E.E.E. J. SOLID STATE CIRCUITS; USA; DA. 1978; VOL. 13; NO 4; PP. 520-527; BIBL. 20 REF.Article

METASTABLE AS-CONCENTRATIONS IN SI ACHIEVED BY ION IMPLANTATION AND RAPID THERMAL ANNEALINGLIETOILA A; GOLD RB; GIBBONS JF et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 1; PP. 230-232; BIBL. 12 REF.Article

ELECTRON-BEAM-INDUCED CURRENT INVESTIGATIONS OF CW LASER-ANNEALED SILICONMIZUTA M; SHENG NH; MERZ JL et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 2; PP. 154-156; BIBL. 14 REF.Article

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