CRITICAL ANALYSIS OF THE CHARGE-STATE DEPENDENCE OF THE ENERGY LOSS OF CHANNELED IONSGOLOVCHENKO JA; COX DE; GOLAND AN et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 5; PP. 2335-2340; BIBL. 20 REF.Article

LASER SURFACE TREATMENT STUDIES IN ULTRAHIGH VACUUMCOWAN PL; GOLOVCHENKO JA.1980; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1980; VOL. 17; NO 5; PP. 1197-1201; BIBL. 13 REF.Article

ANNEALING OF TE-IMPLANTED GAAS BY RUBY LASER IRRADIATION.GOLOVCHENKO JA; VENKATESAN TNC.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 3; PP. 147-149; BIBL. 8 REF.Article

OBSERVATION OF INTERNAL X-RAY WAVE FIELDS DURING BRAGG DIFFRACTION WITH AN APPLICATION TO IMPURITY LATTICE LOCATION.GOLOVCHENKO JA; BATTERMAN BW; BROWN WL et al.1974; PHYS. REV. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 10; PP. 4239-4243; BIBL. 6 REF.Article

DUAL-WAVELENGTH LASER ANNEALINGAUSTON DH; GOLOVCHENKO JA; VENKATESAN TNC et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 9; PP. 558-560; BIBL. 9 REF.Article

X-RAY MONOCHROMATOR SYSTEM FOR USE WITH SYNCHROTON RADIATION SOURCESGOLOVCHENKO JA; LEVESQUE RA; COWAN PL et al.1981; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1981; VOL. 52; NO 4; PP. 509-516; BIBL. 2 REF.Article

X-RAY STANDING WAVES AT CRYSTAL SURFACESCOWAN PL; GOLOVCHENKO JA; ROBBINS MF et al.1980; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1980; VOL. 44; NO 25; PP. 1680-1683; BIBL. 5 REF.Article

QUANTITATIVE OF THE TRANSMISSION OF AXIALLY CHANNELED PROTONS IN THIN SILICON CRYSTALSROSNER JS; GIBSON WM; GOLOVCHENKO JA et al.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 3; PP. 1066-1075; BIBL. 12 REF.Article

COHERENT COMPTON EFFECTGOLOVCHENKO JA; KAPLAN DR; KINCAID B et al.1981; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1981; VOL. 46; NO 22; PP. 1454-1457; BIBL. 7 REF.Article

DIRECT COMPARISON OF MOESSBAUER AND CHANNELING STUDIES OF IMPLANTED ¹¹⁹SN IN SILICON SINGLE CRYSTALS.WEYER G; ANDERSEN JU; DEUTCH BI et al.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 24; NO 2; PP. 117-121; BIBL. 19 REF.Article

CHARGE STATE DEPENDENCE OF CHANNELED ION ENERGY LOSSGOLOVCHENKO JA; GOLAND AN; ROSNER JS et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 3; PP. 957-966; BIBL. 28 REF.Article

A CAPACITANCE-BASED MICROPOSITIONING SYSTEM FOR X-RAY ROCKING CURVE MEASUREMENTSMILLER GL; BOIE RA; COWAN PL et al.1979; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1979; VOL. 50; NO 9; PP. 1062-1069; BIBL. 6 REF.Article

CALCULATION OF THE DYNAMICS OF SURFACE MELTING DURING LASER ANNEALINGSURKO CM; SIMONS AL; AUSTON DM et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 10; PP. 635-637; BIBL. 15 REF.Article

IONIZATION LOSS OF CHANNELED 1,35-GEV/C PROTONS AND PIONS.FICH O; GOLOVCHENKO JA; NIELSEN KO et al.1976; PHYS. REV. LETTERS; U.S.A.; DA. 1976; VOL. 36; NO 21; PP. 1245-1249; BIBL. 6 REF.Article

RANDON AND CHANNELED ENERGY LOSS IN THIN GERMANIUM AND SILICON CRYSTALS FOR POSITIVE AND NEGATIVE 2-15-GEV/C PIONS, KAONS, AND PROTONSESBENSEN H; FICH O; GOLOVCHENKO JA et al.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 3; PP. 1039-1054; BIBL. 22 REF.Article