CUPROUS HALIDESSCHWAB C; GOLTZENE A.1982; PROG. CRYST. GROWTH CHARACT.; ISSN 501948; GBR; DA. 1982; VOL. 5; NO 3; PP. 233-276; BIBL. 118 REF.Article

IMPURITY SCATTERING EFFECT ON THE CYCLOTRON RESONANCE OF CARRIERS IN CU₂OGOLTZENE A; SCHWAB C.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 92; NO 2; PP. 483-487; ABS. GER; BIBL. 7 REF.Article

SOME PHYSICO-CHEMICAL ASPECTS OF SEMI-INSULATING GALLIUM ARSENIDEGOLTZENE A; SCHWAB C.1982; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1982; VOL. 13; NO 3; PP. 23-28; BIBL. 48 REF.Article

E.P.R. CHARACTERIZATION OF P-TYPE AS GROWN AND CL-COMPENSATED THM GROWN CDTE.GOLTZENE A; SCHWAB C.1977; REV. PHYS. APPL.; FR.; DA. 1977; VOL. 12; NO 2; PP. 199-201; ABS. FR.; BIBL. 9 REF.; (COLLOQ. INT. TELLURURE CADMIUM. PROPR. PHYS. APPL. 2; STRASBOURG; 1976)Conference Paper

TRANSITION METAL IONS AS STOICHIOMETRY SENSORS OF CUGAS₂.VON BARDELEBEN HJ; GOLTZENE A; SCHWAB C et al.1975; J. PHYS., COLLOQUE; FR.; DA. 1975; PP. 47-51; ABS. FR.; BIBL. 20 REF.; (2E. CONF. INT. COMPOSES SEMICOND. TERNAIRES; STRASBOURG; 1975)Conference Paper

ELECTRON PARAMAGNETIC RESONANCE OF EXTENDED DEFECTS IN SEMI-INSULATING GAASGOLTZENE A; MEYER B; SCHWAB C et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 6; PP. 4541-4543; BIBL. 15 REF.Article

DEEP CENTER CHARACTERIZATION BY OPTICALLY CONTROLLED PARAMAGNETIC RESONANCE IN AGGAS₂VON BARDELEBEN HJ; GOLTZENE A; SCHWAB C et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5037-5042; BIBL. 17 REF.Article

EPR INVESTIGATIONS OF THE DEFECT CHEMISTRY OF SEMI-INSULATING GAAS:CRGOLTZENE A; POIBLAUD G; SCHWAB C et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 8; PP. 5425-5430; BIBL. 9 REF.Article

ELECTRON PARAMAGNETIC RESONANCE OF TWO STOICHIOMETRY-INDUCED INTRINSIC DEFECT CENTRES IN CUGAS₂.VON BARDELEBEN HJ; GOLTZENE A; SCHWAB C et al.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 76; NO 1; PP. 363-370; ABS. FR.; BIBL. 29 REF.Article

STOICHIOMETRY OF THE TERNARY SEMICONDUCTOR CUGAS₂:⁵⁷FE AS DETERMINED BY MOESSBAUER SPECTROSCOPY.VON BARDELEBEN HJ; GOLTZENE A; SCHWAB C et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 4; PP. 1736-1738; BIBL. 16 REF.Article

THERMAL TREATMENT EFFECTS ON CR CENTERS IN GAAS:CRGOLTZENE A; POIBLAUD G; SCHWAB C et al.1980; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1980; VOL. 15; NO 3; PP. 675-677; ABS. FRE; BIBL. 9 REF.Article

EPR CHARACTERIZATION OF OPTICAL-QUALITY AGGAS₂ GROWN FROM THE MELT.VON BARDELEBEN HJ; GOLTZENE A; SCHWAB C et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 11; PP. 741-744; BIBL. 16 REF.Article

Optimization of the master equation set for a multidot tunnel structureCORDAN, A. S; GOLTZENE, A.EPJ. Applied physics (Print). 1999, Vol 7, Num 2, pp 137-143, issn 1286-0042Article

ELECTRON PARAMAGNETIC RESONANCE OF AN IRON-ASSOCIATED DEFECT IN AGGAS₂VON BARDE LEBEN HJ; GOLTZENE A; SCHWAB C et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 21; NO 5; PP. 1757-1762; BIBL. 10 REF.Article

ELECTRON SPIN AND CYCLOTRON RESONANCE OF LASER ANNEALED SILICONGOLTZENE A; MULLER JC; SCHWAB C et al.1980; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1980; VOL. 15; NO 1; PP. 21-23; ABS. FRE; BIBL. 7 REF.Article

The environment of muonium in solids: an empirical approachSOUIRI, M; GOLTZENE, A; SCHWAB, C et al.Physica status solidi. B. Basic research. 1987, Vol 142, Num 1, pp 271-278, issn 0370-1972Article

COLLECTIVE INVESTIGATIONS ON TWO TYPICAL SEMI-INSULATING GAAS INGOTSBONNAFE J; CASTAGNE M; CLERJAUD B et al.1981; MATER. RES. BULL.; ISSN 0025-5408; USA; DA. 1981; VOL. 16; NO 10; PP. 1193-1212; BIBL. 46 REF.Article

Paramagnetic defects in neutron-irradiated GaPBENCHIGUER, T; GOLTZENE, A; MARI, B et al.Journal of applied physics. 1992, Vol 71, Num 9, pp 4615-4617, issn 0021-8979Article

Electron paramagnetic resonance determination of the generation rate of As antisites in fast neutron irradiated GaAsGOLTZENE, A; MEYER, B; SCHWAB, C et al.Journal of applied physics. 1983, Vol 54, Num 6, pp 3117-3120, issn 0021-8979Article

Charge transfer between paramagnetic photoquenchable anion antisites and electron-induced acceptors in GaAsCHRISTOFFEL, E; GOLTZENE, A; SCHWAB, C et al.Journal of applied physics. 1989, Vol 66, Num 11, pp 5648-5651, issn 0021-8979Article

Persistent photoquenching and anion antisite defects in neutron-irradiated GaAsGOLTZENE, A; MEYER, B; SCHWAB, C et al.Applied physics letters. 1989, Vol 54, Num 10, pp 907-909, issn 0003-6951, 3 p.Article

Fast neutron-induced defects in undoped and iron-doped indium phosphideGOLTZENE, A; MEYER, B; SCHWAB, C et al.Journal of applied physics. 1987, Vol 62, Num 11, pp 4406-4412, issn 0021-8979Article

Correlations between electron paramagnetic resonance and bonding parameters: evidence of a lattice relaxationSOUIRI, M; GOLTZENE, A; SCHWAB, C et al.Physica status solidi. B. Basic research. 1986, Vol 138, Num 1, pp 321-330, issn 0370-1972Article

Experimental evidence for an associated defect model for the neutron generated As_Ga center in gallium arsenideGOLTZENE, A; MEYER, B; SCHWAB, C et al.Radiation effects. 1984, Vol 82, Num 3-4, pp 307-311, issn 0033-7579Article

Résonance paramagnétique de défauts générés par irradiation neutronique dans l'arséniure de gallium = Electron paramagnetic resonance of neutron irradiation induced defects in gallium arsenideGOLTZENE, A; MEYER, B; SCHWAB, C et al.Revue de physique appliquée. 1983, Vol 18, Num 11, pp 703-707, issn 0035-1687Article