RESISTANCE STANDARD USING QUANTIZATION OF THE HALL RESISTANCE OF GAAS-AL_XGA_1-X HETEROSTRUCTURESTSUI DC; GOSSARD AC.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 7; PP. 550-552; BIBL. 13 REF.Article

COVALENT DISTRIBUTION OF SPIN IN V₂O₃: O¹⁷ NUCLEAR RESONANCE.GOSSARD AC; REMEIKA JP.1974; SOLID STATE COMMUNIC.; G.B.; DA. 1974; VOL. 15; NO 3; PP. 609-611; BIBL. 11 REF.Article

OPTICAL BIREFRINGENCE OF ULTRATHIN AL_XGA_1-XAS-GAAS MULTILAYER HETEROSTRUCTURES.VAN DER ZIEL JP; GOSSARD AC.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 5; PP. 2919-2921; BIBL. 14 REF.Article

ABSORPTION, REFRACTIVE INDEX, AND BIREFRINGENCE OF ALAS-GAAS MONOLAYERS.VAN DER ZIEL JP; GOSSARD AC.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 7; PP. 3018-3023; BIBL. 32 REF.Article

STUDY OF ZONE-FOLDING EFFECTS ON PHONONS IN ALTERNATING MONOLAYERS OF GAAS-ALASBARKER AS JR; MERZ JL; GOSSARD AC et al.1978; PHYS. REV., B; USA; DA. 1978; VOL. 17; NO 8; PP. 3181-3196; BIBL. 36 REF.Article

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CRYSTAL GROWTH KINETICS IN (GAAS)_N-(ALAS)_M SUPERLATTICES DEPOSITED BY MOLECULAR BEAM EPITAXY. I. GROWTH ON SINGULAR (100) GAAS SUBSTRATES.PETROFF PM; GOSSARD AC; WIEGMAN W et al.1978; J. CRYST. GROWTH; NLD; DA. 1978; VOL. 44; NO 1; PP. 5-13; BIBL. 18 REF.Article

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