STRUCTURAL ETCHING OF (001) AND (110) FACES OF VARIOUS A^IIIB^V COMPOUNDSGOTTSCHALCH V.1979; KRIST. TECH.; ISSN 0023-4753; DDR; DA. 1979; VOL. 14; NO 8; PP. 939-947; ABS. GER; BIBL. 14 REF.Article

DOPING BEHAVIOUR OF TE IN GA_1-XIN_XAS LIQUID PHASE EPITAXIAL LAYERSNEUMANN H; MUELLER A; GOTTSCHALCH V et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 61; NO 2; PP. 463-467; ABS. GER; BIBL. 15 REF.Article

EPITAXIAL DEPOSITION OF GAAS IN THE GA(CH₃)₃-ASH₃-H₂ SYSTEM (III) HETEROEPITAXY ON ISOLATING SUBSTRATES.PETZKE WH; GOTTSCHALCH V; BUTTER E et al.1974; KRISTALL U. TECH.; DTSCH.; DA. 1974; VOL. 9; NO 5; PP. 477-483; ABS. ALLEM.; BIBL. 27 REF.Article

EPITAXIAL DEPOSITION OF GAAS IN THE GA(CH₃)₃-ASH₃-H₂-SYSTEM(IV), THERMODYNAMIC AND KINETIC CONSIDERATIONS.PETZKE WH; GOTTSCHALCH V; BUTTER E et al.1974; KRISTALL. U. TECH.; DTSCH.; DA. 1974; VOL. 9; NO 7; PP. 763-770; ABS. ALLEM.; BIBL. 17 REF.Article

EPITAKTISCHE ABSCHEIDUNG VON GAAS IN SYSTEM GA(CH₃)₃-ASH₃-H₂. I. AUTOEPTITAKTISCHE ABSCHEIDUNG. = DEPOT EPITAXIQUE DE GAAS DANS LE SYSTEME GA(CH₃)₃-ASH₃-H₂. I. DEPOT AUTOEPITAXIQUEGOTTSCHALCH V; PETZKE WH; BUTTER E et al.1974; KRISTALL U. TECH.; DTSCH.; DA. 1974; VOL. 9; NO 3; PP. 209-217; ABS. ANGL.; BIBL. 23 REF.Article

DIE AUTOEPITAKTISCHE ABSCHEIDUNG VON GAAS IM SYSTEM GA(CH₃)₃-ASH₃-H₂ = DEPOT AUTOEPITAXIQUE DE GAAS DANS LE SYSTEME GA(CH₃)₃-ASH₃-H₂PETZKE WH; GOTTSCHALCH V; BUTTER E et al.1973; KRISTALL U. TECH.; DTSCH.; DA. 1973; VOL. 8; NO 1-3; PP. 177-179; BIBL. 6 REF.Serial Issue

ETCH- AND TRANSMISSION ELECTRON MICROSCOPE INVESTIGATIONS OF MICRODEFECTS IN (001) LEC-GAP SUBSTRATESGOTTSCHALCH V; WAGNER G; PASEMANN M et al.1981; CRYST. RES. TECHNOL.; DDR; DA. 1981; VOL. 9; PP. 1001-1006; ABS. GER; BIBL. 13 REF.Article

UNTERSUCHUNGEN ZUR HETEROEPITAKTISCHEN ABSCHEIDUNG VON GAP AUF GAAS AUS DER SN-LOESUNG. = ETUDE DU DEPOT HETEROEPITAXIQUE DE GAP SUR GAAS A PARTIR D'UNE SOLUTION SN.GOTTSCHALCH V; KRAMER P; BUTTER E et al.1978; KRISTALL U. TECH.; DTSCH.; DA. 1978; VOL. 13; NO 5; PP. 543-551; ABS. ENG; BIBL. 32 REF.Article

EPITAXIAL DEPOSITION OF GAAS IN THE GA(CH₃)₃-ASH₃-H₂ SYSTEM. (II). INVESTIGATIONS ON THE HETERO-EPITAXY OF GAAS ON GE.GOTTSCHALCH V; PETZKE WH; BUTTER E et al.1974; KRISTALL U. TECH.; DTSCH.; DA. 1974; VOL. 9; NO 4; PP. 355-363; ABS. ALLEM.; BIBL. 8 REF.Article

Helical dislocations in Sn-doped GaP epitaxial layers and their characterization by transmission electron microscopyWAGNER, G; GOTTSCHALCH, V.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1985, Vol 52, Num 3, pp 395-406, issn 0141-8610Article

LIQUID PHASE EPITAXIAL DEPOSITION OF GAP ON GAAS.GOTTSCHALCH V; BUTTER E; JACOBS K et al.1978; J. CRYST. GROWTH; NLD; DA. 1978; VOL. 44; NO 2; PP. 157-162; BIBL. 13 REF.Article

Revealing of lattice defects on {001} GaAs surfaces by KI:I:H₂SO₄-etchantGOTTSCHALCH, V; HERRNBEGER, H.Journal of materials science letters. 1990, Vol 9, Num 1, pp 7-10, issn 0261-8028, 4 p.Article

Revealing of lattice defects on (111) faces of gallium phosphide and indium phosphide by chemical etchingWAGNER, G; GOTTSCHALCH, V.Crystal research and technology (1979). 1988, Vol 23, Num 1, pp 59-67, issn 0232-1300Article

H₃PO₄-ETCHING OF (001)-FACES OF INP, (GAIN)P, GAP, AND GA(ASP)GOTTSCHALCH V; HEINIG W; BUTTER E et al.1979; KRISTALL. U. TECH.; DDR; DA. 1979; VOL. 14; NO 5; PP. 563-569; ABS. GER; BIBL. 11 REF.Article

Defects in LEC-grown indium phosphide crystals doped with tinWAGNER, G; GOTTSCHALCH, V.Crystal research and technology (1979). 1986, Vol 21, Num 7, pp 881-890, issn 0232-1300Article

The determination of liquidus data in the In-As systemKNOBLOCH, G; GOTTSCHALCH, V.Crystal research and technology (1979). 1985, Vol 20, Num 9, pp 1205-1209, issn 0232-1300Article

THE APPLICABILITY OF LIGHT-MICROSCOPICAL METHODS FOR THE INVESTIGATION OF DISLOCATION STRUCTURE IN SEMICONDUCTORSLOESCHKE K; GOTTSCHALCH V; JACOBS K et al.1979; KRIST. TECH.; DDR; DA. 1979; VOL. 14; NO 7; PP. 887-894; ABS. GER; BIBL. 29 REF.Article

REVEAL OF DISLOCATION ETCH PITS ON (001) GAP WITH HOT PHOSPHORIC ACID.ROSIN H; FREYDANK G; KLEIN R et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 44; NO 1; PP. K13-K14; H.T. 1; BIBL. 7 REF.Article

Thermal resistivity of GaInAsP alloy: experimental resultsBOTH, W; GOTTSCHALCH, V; WAGNER, G et al.Crystal research and technology (1979). 1986, Vol 21, Num 5, pp K85-K87, issn 0232-1300Article

Pseudomorphic growth and nucleation of misfit dislocations in the epitaxial system (001) InP/In_1-xGa_xAs. II: Critical thickness and dislocation motionWAGNER, G; GOTTSCHALCH, V; RHAN, H et al.Physica status solidi. A. Applied research. 1989, Vol 113, Num 1, pp 71-81, issn 0031-8965Article

Pseudomorphic growth and nucleation of misfit dislocations in the epitaxial system (001) InP/In_1-xGa_xAs. I: Pseudomorphic growth, tetragonal distortion, and lattice relaxation by dislocation nucleationWAGNER, G; GOTTSCHALCH, V; RHAN, H et al.Physica status solidi. A. Applied research. 1989, Vol 112, Num 2, pp 519-531, issn 0031-8965, 13 p.Article

Correlation between the surface morphology and antiphase boundaries in ordered (GaIn)PSASS, T; PIETZONKA, I; GOTTSCHALCH, V et al.Thin solid films. 1999, Vol 348, Num 1-2, pp 196-201, issn 0040-6090Article

Determination of the crystallographic polarity of (111)-InP crystals by the Kossel technique and chemical etchingGEIST, V; ASCHERON, C; GOTTSCHALCH, V et al.Crystal research and technology (1979). 1983, Vol 18, Num 9, pp K98-K100, issn 0232-1300Article

Systematic study of the surface morphology of ordered (GaIn)PPIETZONKA, I; SASS, T; GOTTSCHALCH, V et al.Applied surface science. 2000, Vol 165, Num 1, pp 60-69, issn 0169-4332Article

InP monolayers inserted in a GaP matrix studied by spectroscopic ellipsometrySCHMIDT, H; RHEINLÄNDER, B; GOTTSCHALCH, V et al.Thin solid films. 1998, Vol 312, Num 1-2, pp 354-356, issn 0040-6090Article