au.\*:("GOURLEY, P. L")
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Microstructured semiconductor lasers for high-speed information processingGOURLEY, P. L.Nature (London). 1994, Vol 371, Num 6498, pp 571-577, issn 0028-0836Article
Lasing phase diagram for semiconductor surface-emitting lasersGOURLEY, P. L.Applied physics letters. 1990, Vol 57, Num 23, pp 2410-2412, issn 0003-6951Article
Optical bleaching in an epitaxial (Al,Ga)As Fabry-Perot resonatorGOURLEY, P. L; DRUMMOND, T. J.Applied physics letters. 1987, Vol 51, Num 18, pp 1395-1397, issn 0003-6951Article
Visible, room-temperature, surface-emitting laser using an epitaxial Fabry-Perot resonator with AlGaAs/AlAs quarter-wave high reflectors and AlGaAs/GaAs multiple quantum wellsGOURLEY, P. L; DRUMMOND, T. J.Applied physics letters. 1987, Vol 50, Num 18, pp 1225-1227, issn 0003-6951Article
Single crystal, epitaxial multilayers of AlAs, GaAs, and AlxGa1-XAs for use as optical interferometric elementsGOURLEY, P. L; DRUMMOND, T. J.Applied physics letters. 1986, Vol 49, Num 9, pp 489-491, issn 0003-6951Article
Detecting cancer quickly and accuratelyGOURLEY, P. L; MCDONALD, A. E; SKIRBOLL, S. L et al.SPIE proceedings series. 2000, pp 2-10, isbn 0-8194-3528-7Conference Paper
Epitaxial surface-emitting laser on a lattice-mismatched substrateGOURLEY, P. L; FRITZ, I. J; BRENNAN, T. M et al.Applied physics letters. 1992, Vol 60, Num 17, pp 2057-2059, issn 0003-6951Article
Ultrasensitive detection of red blood cell lysing in a microfabricated semiconductor laser cavityGOURLEY, P. L; FRENCH, T; MCDONALD, A. E et al.SPIE proceedings series. 1998, pp 195-206, isbn 0-8194-2697-0Conference Paper
Lasing threshold in quantum well surface-emitting lasers: many-body effects and temperature dependenceGOURLEY, P. L; LYO, S. K; BRENNAN, T. M et al.Applied physics letters. 1989, Vol 55, Num 26, pp 2698-2700, issn 0003-6951Article
The effects of ion-implantation damage on the first-order Raman spectra of GaPMYERS, D. R; GOURLEY, P. L; PEERCY, P. S et al.Journal of applied physics. 1983, Vol 54, Num 9, pp 5032-5038, issn 0021-8979Article
Photoluminescence microscopy of epitaxial GaAs on SiGOURLEY, P. L; LONGERBONE, M; ZHANG, S. L et al.Applied physics letters. 1987, Vol 51, Num 8, pp 599-601, issn 0003-6951Article
The growth of high quality CdTe on GaAs by molecular beam epitaxyRENO, J. L; CARR, M. J; GOURLEY, P. L et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1990, Vol 8, Num 2, pp 1006-1012, issn 0734-2101Article
High-efficiency, continuous-wave, epitaxial surface-emitting laser with pseudomorphic InGaAs quantum wellsGOURLEY, P. L; LYO, S. K; DAWSON, L. R et al.Applied physics letters. 1989, Vol 54, Num 15, pp 1397-1399, issn 0003-6951Article
Optically tuned, all-semiconductor optical interference filterGOURLEY, P. L; BIEFELD, R. M; JOHNSON, P. B et al.Applied physics letters. 1987, Vol 51, Num 17, pp 1310-1312, issn 0003-6951Article
Dislocation filtering in semiconductor superlattices with lattice-matched and lattice-mismatched layer materialsGOURLEY, P. L; DRUMMOND, T. J; DOYLE, B. L et al.Applied physics letters. 1986, Vol 49, Num 17, pp 1101-1103, issn 0003-6951Article
Lasing transitions in GaAs/GaAs1-xPx strained-layer superlattices with x=0.1-0.5GOURLEY, P. L; HOHIMER, J. P; BIEFELD, R. M et al.Applied physics letters. 1985, Vol 47, Num 6, pp 552-554, issn 0003-6951Article
Impact ionization near GaAs grain boundariesPIKE, G. E; GOURLEY, P. L; KURTZ, S. R et al.Applied physics letters. 1983, Vol 43, Num 10, pp 939-941, issn 0003-6951Article
Nanolaser Spectroscopy for Studying Novel BiomaterialsGOURLEY, P. L; SASAKI, D. Y; NAVIAUX, Robert K et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 685914.1-685914.10, issn 0277-786X, isbn 978-0-8194-7034-8, 1VolConference Paper
A semiconductor microlaser for intracavity flow cytometryGOURLEY, P. L; AKHIL, O; COPELAND, G. C et al.SPIE proceedings series. 1999, pp 64-73, isbn 0-8194-3076-5Conference Paper
Optical properties of fractal quantum wellsGOURLEY, P. L; TIGGES, C. P; SCHNEIDER, R. P et al.Applied physics letters. 1993, Vol 62, Num 15, pp 1736-1738, issn 0003-6951Article
High-efficiency TEM00 continuous-wave (Al,Ga)As epitaxial surface-emitting lasers and effect of half-wave periodic gainGOURLEY, P. L; BRENNAN, T. M; HAMMONS, B. E et al.Applied physics letters. 1989, Vol 54, Num 13, pp 1209-1211, issn 0003-6951, 3 p.Article
Threshold characteristics of epitaxial Al(Ga,As) surface-emitting lasers with integrated quarter-wave high reflectorsGOURLEY, P. L; DRUMMOND, T. J; ZIPPERIAN, T. E et al.Journal of applied physics. 1988, Vol 64, Num 11, pp 6578-6580, issn 0021-8979Article
Diffusion dynamics of holes in InxGa1-xAs/GaAs strained-layer superlatticesGOURLEY, P. L; WICZER, J. J; ZIPPERIAN, T. E et al.Applied physics letters. 1986, Vol 49, Num 2, pp 100-102, issn 0003-6951Article
Nanofabrication of photonic lattice structures in GaAs/AlGaAsWENDT, J. R; VAWTER, G. A; GOURLEY, P. L et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 6, pp 2637-2640, issn 1071-1023Conference Paper
Optical bloch waves in a semiconductor photonic latticeGOURLEY, P. L; WARREN, M. E; VAWTER, G. A et al.Applied physics letters. 1992, Vol 60, Num 22, pp 2714-2716, issn 0003-6951Article
