A DIGITAL CONTROL SYSTEM FOR A VARIABLE SPEED ALTERNATORCHAUMING YANG; GRANNEMANN WW.1982; IEEE CIRCUITS SYST. MAG.; ISSN 0163-6812; USA; DA. 1982; VOL. 4; NO 2; PP. 9-15Article

FABRICATION OF A FERROELECTRIC GATE MEMORY TRANSISTOR.PARK JK; GRANNEMANN WW.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 463-465; BIBL. 5 REF.Conference Paper

NON-VOLATILE MEMORY PROPERTIES OF METAL/SRTIO₃/SIO₂/SI STRUCTURESHUANG TY; GRANNEMANN WW.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 87; NO 2; PP. 159-166; BIBL. 16 REF.Article

PHOTOVOLTAIC PROPERTIES OF FERROELECTRIC BATIO₃ THIN FILMS OF SPUTTER DEPOSITED ON SILICONDHARMADHIKARI VS; GRANNEMANN WW.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 12; PP. 8988-8992; BIBL. 40 REF.Article

CURRENT-VOLTAGE CHARACTERISTICS OF METAL-TITANIUM DIOXIDE-SILICON STRUCTURESBROWN WD; GRANNEMANN WW.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 51; NO 1; PP. 119-132; BIBL. 32 REF.Article

C-V CHARACTERISTICS OF METAL-TITANIUM DIOXIDE-SILICON CAPACITORSBROWN WD; GRANNEMANN WW.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 6; PP. 837-846; BIBL. 13 REF.Article

EFFECTS OF AND A MODEL FOR SILICON OXIDE GROWTH UNDER A DEPOSITED THIN FILM ON SILICON DURING POSTDEPOSITION HIGH TEMPERATURE ANNEALINGJOH DY; GRANNEMANN WW; BROWN WD et al.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 10; PP. 1731-1734; BIBL. 10 REF.Article

THE FARADAY EFFECT IN HG_1-XCD_XTE AT CO₂ LASER WAVELENGTHSAHRENKIEL RK; WEISS P; WATKINS D et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 4; PP. 2265-2267; BIBL. 16 REF.Article

THE METAL OXIDE SEMICONDUCTOR INTEGRATED CIRCUIT TECHNOLOGYGRANNEMANN WW; SOUTHWARD HD; ERTEZA A et al.1972; J. SCI. INDUSTR. RES.; INDIA; DA. 1972; VOL. 31; NO 6; PP. 299-311; BIBL. 24 REF.Serial Issue